An Actuator for Controlling the Area of Dielectric Layer of the Tunable Capacitor by Commercial CMOS Fabrication

2003 ◽  
Author(s):  
Jing-Hung Chiou ◽  
Ran-Jin Lin ◽  
Ching-Liang Dai ◽  
Kai-Hsiang Yen ◽  
Yu-Ching Shih ◽  
...  
Keyword(s):  
Cantilever Beam ◽  
Dielectric Layer ◽  
Electrostatic Force ◽  
Complementary Metal Oxide Semiconductor ◽  
Beam Width ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Fixed Plate ◽  
Tunable Capacitor ◽  
Post Process

This study describes the fabrication of an actuator of controlling the area of a dielectric layer using the commercial 0.35μm Single Polysilicon Four Metals (SPFM) Complementary Metal Oxide Semiconductor (CMOS) process and a post-process. The post-process requires wet and dry etching without using a mask to etch sacrificial layers and release the structures suspended in the actuator. The actuator is composed of a top suspended plate, a bottom fixed plate, and a laterally yielding cantilever beam, and two fixed curved electrodes. One end of the cantilever beam is anchored whereas the other end is connected to the suspended plate. The fixed curved electrodes and the cantilever beam are stacked layers of metals and via layers, formed by the CMOS process. The cantilever beam is deflected over a large distance using electrostatic force and the suspended plate swings laterally to increase or decrease the area of overlap between itself and the bottom fixed plate. The dimensions of the actuator are: suspended plate diameter = 100 μm; cantilever beam width = 2 μm, height = 6 μm, and length = 300 μm. The moved end of the cantilever beam, connected to the suspended plate, is deflected by 25 μm when a dc power supply of 60V is applied to it.

An Optical Diffraction Microphone with Active Grating Diaphragm

2005 ◽  
Vol 872 ◽  
Author(s):  
Kazuhiro Suzuki ◽  
Hideyuki Funaki ◽  
Yujiro Naruse
Keyword(s):  
Electrostatic Force ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Optical Diffraction ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Sound Waves ◽  
Micro Electro Mechanical Systems ◽  
Light Waves ◽  
Arbitrary Frequency

AbstractWe present a new conceptual active optical microphone based on complementary metal-oxide semiconductor (CMOS) - micro electro mechanical systems (MEMS) micromachining techniques. The diaphragm of the microphone has a diffracting grating fabricated by the CMOS process with only a small number of post-processes. The active microphone actuates the diaphragm on an arbitrary frequency by electrostatic force, and detects sound waves by the light waves. From the verification experiment result, this active microphone was able to perform advanced functions, such as the amplifier effect and the detection of phase information of sound waves.

A Capacitive Ammonia Sensor Using the Commercial 0.18 μm CMOS Process

2015 ◽  
Vol 1091 ◽  
pp. 3-8
Author(s):  
Ming Zhi Yang ◽  
Ching Liang Dai
Keyword(s):  
Sol Gel ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Ammonia Vapor ◽  
Ammonia Sensor ◽  
Post Process ◽  
Sensitive Film ◽  
Interdigital Electrodes

The project presents an ammonia sensor with heater on-a-chip manufactured using the commercial 0.18 μm CMOS (complementary metal oxide semiconductor) process. The ammonia sensor is composed of a sensitive film, interdigital electrodes and a polysilicon heater. The sensor is a capacitive type and the sensitive film is ZrO2that is prepared by sol-gel method. The sensor requires a post-process to remove the sacrificial oxide layer and coat the ZrO2film on the interdigital electrodes. When the sensitive film absorbs ammonia vapor, the capacitance of the sensor generates a change. Experimental results show that the sensitivity of the ammonia sensor is 2.47 pF/ppm at 270 °C.

scholarly journals Manufacturing and Testing of Radio Frequency MEMS Switches Using the Complementary Metal Oxide Semiconductor Process

Sensors ◽  
2021 ◽  
Vol 21 (4) ◽  
pp. 1396
Author(s):  
Zung-You Tsai ◽  
Po-Jen Shih ◽  
Yao-Chuan Tsai ◽  
Ching-Liang Dai
Keyword(s):  
Metal Oxide ◽  
Radio Frequency ◽  
Oxide Layer ◽  
Coplanar Waveguide ◽  
Actuation Voltage ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Post Process

A radio frequency microelectromechanical system switch (MSS) manufactured by the complementary metal oxide semiconductor (CMOS) process is presented. The MSS is a capacitive shunt type. Structure for the MSS consists of coplanar waveguide (CPW) lines, a membrane, and springs. The membrane locates over the CPW lines. The surface of signal line for the CPW has a silicon dioxide dielectric layer. The fabrication of the MSS contains a CMOS process and a post-process. The MSS has a sacrificial oxide layer after the CMOS process. In the post-processing, a wet etching of buffer oxide etch (BOE) etchant is employed to etch the sacrificial oxide layer, so that the membrane is released. Actuation voltage for the MSS is simulated using the CoventorWare software. The springs have a low stiffness, so that the actuation voltage reduces. The measured results reveal that actuation voltage for the MSS is 10 V. Insertion loss for the MSS is 0.9 dB at 41 GHz and isolation for the MSS is 30 dB at 41 GHz.

scholarly journals Phase Change Metasurfaces by Continuous or Quasi-Continuous Atoms for Active Optoelectronic Integration

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1272
Author(s):  
Zhihua Fan ◽  
Qinling Deng ◽  
Xiaoyu Ma ◽  
Shaolin Zhou
Keyword(s):  
Phase Change ◽  
Phase Change Materials ◽  
Complementary Metal Oxide Semiconductor ◽  
Photonic Devices ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Nanophotonic Devices ◽  
Optoelectronic Integration ◽  
Hybrid Devices ◽  
Micro Electromechanical System

In recent decades, metasurfaces have emerged as an exotic and appealing group of nanophotonic devices for versatile wave regulation with deep subwavelength thickness facilitating compact integration. However, the ability to dynamically control the wave–matter interaction with external stimulus is highly desirable especially in such scenarios as integrated photonics and optoelectronics, since their performance in amplitude and phase control settle down once manufactured. Currently, available routes to construct active photonic devices include micro-electromechanical system (MEMS), semiconductors, liquid crystal, and phase change materials (PCMs)-integrated hybrid devices, etc. For the sake of compact integration and good compatibility with the mainstream complementary metal oxide semiconductor (CMOS) process for nanofabrication and device integration, the PCMs-based scheme stands out as a viable and promising candidate. Therefore, this review focuses on recent progresses on phase change metasurfaces with dynamic wave control (amplitude and phase or wavefront), and especially outlines those with continuous or quasi-continuous atoms in favor of optoelectronic integration.

scholarly journals Universal Filter Based on Compact CMOS Structure of VDDDA

Sensors ◽  
2021 ◽  
Vol 21 (5) ◽  
pp. 1683
Author(s):  
Winai Jaikla ◽  
Fabian Khateb ◽  
Tomasz Kulej ◽  
Koson Pitaksuttayaprot
Keyword(s):  
Metal Oxide ◽  
Dynamic Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Experimental Results ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Voltage Gain ◽  
Universal Filter ◽  
Mos Transistor

This paper proposes the simulated and experimental results of a universal filter using the voltage differencing differential difference amplifier (VDDDA). Unlike the previous complementary metal oxide semiconductor (CMOS) structures of VDDDA that is present in the literature, the present one is compact and simple, owing to the employment of the multiple-input metal oxide semiconductor (MOS) transistor technique. The presented filter employs two VDDDAs, one resistor and two grounded capacitors, and it offers low-pass: LP, band-pass: BP, band-reject: BR, high-pass: HP and all-pass: AP responses with a unity passband voltage gain. The proposed universal voltage mode filter has high input impedances and low output impedance. The natural frequency and bandwidth are orthogonally controlled by using separated transconductance without affecting the passband voltage gain. For a BP filter, the root mean square (RMS) of the equivalent output noise is 46 µV, and the third intermodulation distortion (IMD3) is −49.5 dB for an input signal with a peak-to peak of 600 mV, which results in a dynamic range (DR) of 73.2 dB. The filter was designed and simulated in the Cadence environment using a 0.18-µm CMOS process from Taiwan semiconductor manufacturing company (TSMC). In addition, the experimental results were obtained by using the available commercial components LM13700 and AD830. The simulation results are in agreement with the experimental one that confirmed the advantages of the filter.

Millimeter-wave dual-mode and dual-band switchable Gilbert up-conversion mixer in 65-nm CMOS process

2021 ◽  
pp. 1-5
Author(s):  
Fang Zhu ◽  
Guo Qing Luo
Keyword(s):  
Millimeter Wave ◽  
Complementary Metal Oxide Semiconductor ◽  
Local Oscillator ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Dual Band ◽  
Cmos Process ◽  
Pumping Power ◽  
Dual Mode ◽  
Dc Power

Abstract In this paper, a millimeter-wave (MMW) dual-mode and dual-band switchable Gilbert up-conversion mixer in a commercial 65-nm complementary metal oxide semiconductor (CMOS) process is presented. By simply changing the bias, the proposed CMOS Gilbert up-conversion mixer can be switched between subharmonic and fundamental operation modes for MMW dual-band applications. With a low local oscillator pumping power of 3 dBm and low dc power consumption of 6 mW, the proposed CMOS Gilbert up-conversion mixer exhibits a measured conversion gain of −0.5 ± 1.5 dB from 37 to 50 GHz and 2.5 ± 1.5 dB from 17.5 to 32 GHz for the subharmonic and fundamental modes, respectively.

scholarly journals Performance Comparison of Carry-Lookahead and Carry-Select Adders Based on Accurate and Approximate Additions

Electronics ◽  
2018 ◽  
Vol 7 (12) ◽  
pp. 369 ◽  
Author(s):  
Padmanabhan Balasubramanian ◽  
Nikos Mastorakis
Keyword(s):  
High Speed ◽  
Digital Signal ◽  
Complementary Metal Oxide Semiconductor ◽  
Performance Comparison ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Least Significant Bit ◽  
Design Metrics ◽  
Ripple Carry Adder ◽  
Speed Performance

Addition is a fundamental operation in microprocessing and digital signal processing hardware, which is physically realized using an adder. The carry-lookahead adder (CLA) and the carry-select adder (CSLA) are two popular high-speed, low-power adder architectures. The speed performance of a CLA architecture can be improved by adopting a hybrid CLA architecture which employs a small-size ripple-carry adder (RCA) to replace a sub-CLA in the least significant bit positions. On the other hand, the power dissipation of a CSLA employing full adders and 2:1 multiplexers can be reduced by utilizing binary-to-excess-1 code (BEC) converters. In the literature, the designs of many CLAs and CSLAs were described separately. It would be useful to have a direct comparison of their performances based on the design metrics. Hence, we implemented homogeneous and hybrid CLAs, and CSLAs with and without the BEC converters by considering 32-bit accurate and approximate additions to facilitate a comparison. For the gate-level implementations, we considered a 32/28 nm complementary metal-oxide-semiconductor (CMOS) process targeting a typical-case process–voltage–temperature (PVT) specification. The results show that the hybrid CLA/RCA architecture is preferable among the CLA and CSLA architectures from the speed and power perspectives to perform accurate and approximate additions.

Review: Static and Dynamic Analysis Methods for Multi-Branch Biasing Circuits

2018 ◽  
Vol 27 (13) ◽  
pp. 1830008
Author(s):  
Jin Wu ◽  
Pengfei Dai ◽  
Jie Peng ◽  
Lixia Zheng ◽  
Weifeng Sun
Keyword(s):  
Feedback Loop ◽  
Supply Voltage ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Critical Parameters ◽  
Cmos Process ◽  
Stable Equilibrium Point ◽  
Static And Dynamic Analysis ◽  
Text Structures ◽  
Different Types

The fundamental theories and primary structures for the multi-branch self-biasing circuits are reviewed in this paper. First, the [Formula: see text]/[Formula: see text] and [Formula: see text]/[Formula: see text] structures illustrating the static current definition mechanism are presented, including the conditions of starting up and entering into a stable equilibrium point. Then, the AC method based on the loop gain evaluation is utilized to analyze different types of circuits. On this basis, the laws which can couple the branches of self-biasing circuits to construct a suitable close feedback loop are summarized. By adopting Taiwan Semiconductor Manufacturing Company (TSMC)’s 0.18[Formula: see text][Formula: see text]m complementary metal–oxide–semiconductor (CMOS) process with 1.8[Formula: see text][Formula: see text] supply voltage, nearly all the circuits mentioned in the paper are simulated in the same branch current condition, which is close to the corresponding calculated results. Therefore, the methods summarized in this paper can be utilized for distinguishing, constructing, and optimizing critical parameters for various structures of the self-biasing circuits.

scholarly journals A Regulated Temperature-Insensitive High-Voltage Charge Pump in Standard CMOS Process for Micromachined Gyroscopes

Sensors ◽  
2019 ◽  
Vol 19 (19) ◽  
pp. 4149
Author(s):  
Xiang Li ◽  
Rui Li ◽  
Chunge Ju ◽  
Bo Hou ◽  
Qi Wei ◽  
...  
Keyword(s):  
Metal Oxide ◽  
High Voltage ◽  
Output Voltage ◽  
Charge Pump ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Temperature Changes ◽  
Adjustable Range

Micromachined gyroscopes require high voltage (HV) for actuation and detection to improve its precision, but the deviation of the HV caused by temperature fluctuations will degrade the sensor’s performance. In this paper, a high-voltage temperature-insensitive charge pump is proposed. Without adopting BCD (bipolar-CMOS-DMOS) technology, the output voltage can be boosted over the breakdown voltage of n-well/substrate diode using triple-well NMOS (n-type metal-oxide-semiconductor) transistors. By controlling the pumping clock’s amplitude continuously, closed-loop regulation is realized to reduce the output voltage’s sensitivity to temperature changes. Besides, the output level is programmable linearly in a large range by changing the reference voltage. The whole circuit has been fabricated in a 0.18- μ m standard CMOS (complementary metal-oxide-semiconductor) process with a total area of 2.53 mm 2 . Measurements indicate that its output voltage has a linear adjustable range from around 13 V to 16.95 V, and temperature tests show that the maximum variations of the output voltage at − 40 ∼ 80 ∘ C are less than 1.1%.

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