Analysis and Design of a Robust RF MEMS Switch

2012 ◽  
Author(s):  
Ibrahim Chamseddine ◽  
Hadi Kasab ◽  
Maya Antoun ◽  
Tawfiq Dahdah ◽  
Mohammed Mirhi ◽  
...  
Keyword(s):  
Failure Modes ◽  
Rf Mems ◽  
Dielectric Breakdown ◽  
Rf Switch ◽  
Switching Speed ◽  
Analysis And Design ◽  
Electrostatically Actuated ◽  
Mems Switch ◽  
Switching Performance ◽  
Contact Adhesion

A MEMS RF switch is expected to undergo 10 billion switching cycles before failure. Until complete physical explanation for these failure modes that include contact adhesion, damping effects, stiction, increases in resistance with time, dielectric breakdown, and electron trapping is fully established, the technology’s numerous advantages cannot be harvested reliably and efficiently. This paper investigates prospective solutions to problems in switch designs by proposing a new design for the switch. We consider the new design from different perspectives: dynamic, electric, fluidic, etc. It is billed to overcome the difficulties and involves the implementation of liquid metal contact electrostatically actuated to ensure the same switching performance, with prolonged life span, and robust switching speed.

scholarly journals Design and Analysis of Reconfigurable DMTL phase Shifter for High Speed Applications by Mechanical Tuning

2020 ◽  
Vol 9 (4) ◽  
pp. 333-339
Keyword(s):  
High Speed ◽  
Phase Shifter ◽  
Rf Mems ◽  
Planar Waveguides ◽  
Stress Factors ◽  
Mems Devices ◽  
Rf Switch ◽  
Switching Speed ◽  
Mems Switch ◽  
Mechanical Tuning

Tremendous advancement in the field of Radio-frequency were developed through Micro-fabrication techniques, these technologies miniaturize device in a micro-scale behavior for improved device performances. These technologies are developing rapidly due to its distinct features and wide usage in various applications ranging from switches to sensing devices. The principal behind this work is to build a MEMS based Reconfigurable DMTL phase shifter based on RF MEMS switch with improved device phenomenon like switching speed, low actuating voltage, losses and stress factors. The RF switch is build in a series behavior through co-planar waveguides. Generally switching speed is a major concern in RF MEMS devices because of the presence of the actuating elements within the structure which in turn hinders the device ability to function. The phase shifter designed helps in improving the overall switching speed of the device without electrical or dimension alternation of the device. In this paper, we are implementing a PUSH PULL based RF MEMS reconfigurable switch which was structurally altered based on triangular cantilevers in order to enhance the device switching speed. This would develop and enable better application in terms of reconfigurable phase shifter which can be operated at the wider bandgap applications. Even the resonant frequency enhancement was made which provokes an increase of 13% in terms of the switching speed.

Analysis of Cycle Lifetimes and Failure Modes for RF MEMS Switches

2005 ◽  
Author(s):  
Chris Brown ◽  
Jacqueline Krim ◽  
Art Morris
Keyword(s):  
Failure Modes ◽  
Electrode Materials ◽  
Rf Mems ◽  
Operating Parameters ◽  
Rf Mems Switch ◽  
Testing Conditions ◽  
Mems Switches ◽  
Mems Switch ◽  
Contact Points ◽  
Rf Mems Switches

RF MEMS switch lifetimes are limited by stiction of the moving components and degradation of the metal to metal contact points during cycling. Currently, maximum switch lifetimes are around 10 to 25 billion cycles. Past experimentation has shown that some stiction problems can be overcome by carefully controlling the operating parameters, but problems at the contact points remain [1]. It is believed that by developing a set of tribological design rules which limit the factors leading to catastrophic failure, switches can operate in excess of 100 billion cycles. Recent research has quantified the reliability and durability of gold contact points on RF MEMS switches as a function of current [2]. Most experimentation on RF MEMS switches has focused on controlling the operating parameters such as current, voltage, electrode materials, contact area, switching mode and force; however, limited work has been performed on a single device type in multiple environmentally controlled testing conditions such as vacuum, cryogenic temperatures, etc. This presentation will discuss performance of the wiSpry RF MEMS switch focusing on quantification of device reliability and failure mechanisms under various atmospheric and temperature conditions. Environmental testing conditions include switching in open air, vacuum and inert gasses, in temperatures ranging from 294 K to 4 K.

scholarly journals A micro level electrostatically actuated cantilever and metal contact based series RF MEMS switch for multi-band applications

2017 ◽  
Vol 4 (1) ◽  
pp. 1323367 ◽  
Author(s):  
T. Lakshmi Narayana ◽  
K. Girija Sravani ◽  
K. Srinivasa Rao ◽  
Kun Chen
Keyword(s):  
Rf Mems ◽  
Metal Contact ◽  
Rf Mems Switch ◽  
Electrostatically Actuated ◽  
Mems Switch ◽  
Micro Level ◽  
Multi Band

Quantification of Uncertainty in Creep Failure in RF-MEMS Switches

2012 ◽  
Author(s):  
Peter A. Kolis ◽  
Marisol Koslowski ◽  
Anil K. Bajaj
Keyword(s):  
Rf Mems ◽  
Beam Model ◽  
Creep Failure ◽  
Micro Electro Mechanical Systems ◽  
Modal Expansion ◽  
Mems Switches ◽  
Electrostatically Actuated ◽  
Mems Switch ◽  
Rf Mems Switches

We present simulations of the dynamic response of radio frequency micro-electro-mechanical-systems (RF-MEMS) switches undergoing creep deformation. The model includes a microscale-informed Coble creep formulation incorporated in a beam model of an electrostatically actuated RF-MEMS switch, and it is solved using a Ritz-Galerkin based modal expansion. The resulting effects on the long-term device behavior as well as the implications of uncertainty in the device geometry and material parameters are studied. We find that the addition of creep to the beam model results in an undesired degradation of the device performance, as evidenced by decreases in the closing and release voltages.

A Feasibility Study on Micro Silicon Cantilever Beam for High Isolation RF MEMS Switch

2007 ◽  
Author(s):  
Lingling Lin ◽  
Feiyan Chen ◽  
Guoqing Hu ◽  
Wenyan Liu ◽  
Baihai Wu
Keyword(s):  
Cantilever Beam ◽  
Rf Mems ◽  
Actuation Voltage ◽  
Dielectric Materials ◽  
Rf Mems Switch ◽  
High Isolation ◽  
Electrostatically Actuated ◽  
Mems Switch ◽  
Silicon Cantilever ◽  
High Contact Force

This paper presents a novel electrostatically actuated microelectromechanical switch. The structure of cantilever beam with electrodes sandwiched between Si and SiO2 layers has been established. Placing the pull-down electrodes outside the switching contact, the actuation voltage can be reduced while keeping high contact force and restoration force. The top and bottom dielectric materials separated two conducting electrodes when actuated. Thus, the reliability and the performance of the switch have been greatly improved. The charts of the deflection of the cantilever beam with respect to the voltage have been simulated with the MATLAB computer programming language.

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