Application of Learning Control Theory to Mechanisms: Part 2 — Reduction of Residual Vibrations in High-Speed Electromechanical Bonding Machines

1994 ◽  
Author(s):  
M. Chew ◽  
M. Phan
Keyword(s):  
Integrated Circuits ◽  
Inverse Kinematics ◽  
High Speed ◽  
Inverse Dynamics ◽  
System Modeling ◽  
Learning Control ◽  
Integrated Approach ◽  
Electric Motors ◽  
Silicon Chips ◽  
Cam Profile

Abstract Learning control provides an integrated approach for handling inverse kinematics and inverse dynamics of mechanisms, in the presence of parametric errors in system modeling. This technique is applied to reduce residual vibrations at the bonding cap of an electromechanical bonding machine for integrated circuits (ICs); a process of electrically linking silicon chips to the leads. The bonding cap trajectory for the bonding motion is actuated by high-speed cams driven by electric motors. The primary causes of residual vibrations are due to errors in the design model of the nonlinear electromechanical system, in camshaft speed control, as well as, in cam profile fabrication. This article demonstrates the capability of learning control to reduce the residual vibrations in such machines, by compensating for these sources of errors.

Learning Control of a High-Speed Cam Dynamic System in the Presence of Viscous Damping and Coulomb Friction Theory and Experiment

1998 ◽  
Author(s):  
Meng-Sang Chew ◽  
Theeraphong Wongratanaphisan ◽  
Yi-Chen Lu
Keyword(s):  
Dynamic System ◽  
Coulomb Friction ◽  
High Speed ◽  
Explicit Knowledge ◽  
Inverse Dynamics ◽  
Learning Control ◽  
Control Technique ◽  
Viscous Damping ◽  
Highly Nonlinear ◽  
Cam Follower

Abstract This paper introduces the application of learning control theory to the intelligent control of an electromechanical cam-follower system. Learning control has been shown to handle inverse kinematics and inverse dynamics problems very well. It is a technique that can be applied to systems that perform repetitive tasks in order to reduce the errors that occur between the actual output and the desired output. Here, learning control is applied to a dynamic system containing nonlinear kinematics elements such as a cam. The learning process is based on output errors alone. It does not require explicit knowledge of the physical system. The presence of viscous damping and Coulomb friction both simplifies and challenges the learning control technique in compensating for such highly nonlinear dissipative effects within the cam-follower system. Results are presented based on the simulations of the system as well as the experiment. This study shows that learning control is capable of compensating for nonlinear Coulomb friction, that frequency occurs in the joints of many real world mechanisms.

scholarly journals Electrical and Mechanical Analysis of Different TSV Geometries

Metals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 467
Author(s):  
Il Ho Jeong ◽  
Alireza Eslami Majd ◽  
Jae Pil Jung ◽  
Nduka Nnamdi Ekere
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
High Performance ◽  
Signal Transmission ◽  
Characteristic Impedance ◽  
Electrical Signal ◽  
Electrical Performance ◽  
Mechanical Reliability ◽  
Silicon Chips ◽  
The Impact

Through-silicon via (TSV) is an important component for implementing 3-D packages and 3-D integrated circuits as the TSV technology allows stacked silicon chips to interconnect through direct contact to help facilitate high-speed signal processing. By facilitating the stacking of silicon chips, the TSV technology also helps to meet the increasing demand for high density and high performance miniaturized electronic products. Our review of the literature shows that very few studies have reported on the impact of TSV bump geometry on the electrical and mechanical characteristics of the TSV. This paper reports on the investigation of different TSV geometries with the focus on identifying the ideal shapes for improved electrical signal transmission as well as for improved mechanical reliability. The cylindrical, quadrangular (square), elliptical, and triangular shapes were investigated in our study and our results showed that the quadrangular shape had the best electrical performance due to good characteristic impedance. Our results also showed that the quadrangular and cylindrical shapes provided improved mechanical reliability as these two shapes lead to high Cu protrusion of TSV after the annealing process.

scholarly journals Digital Hardware Realization of Forward and Inverse Kinematics for a Five-Axis Articulated Robot Arm

2015 ◽  
Vol 2015 ◽  
pp. 1-10
Author(s):  
Bui Thi Hai Linh ◽  
Ying-Shieh Kung
Keyword(s):  
Integrated Circuits ◽  
Inverse Kinematics ◽  
High Speed ◽  
Robot Arm ◽  
Hardware Realization ◽  
Finite State ◽  
Motion Speed ◽  
Forward And Inverse Kinematics ◽  
Articulated Robot ◽  
Five Axis

When robot arm performs a motion control, it needs to calculate a complicated algorithm of forward and inverse kinematics which consumes much CPU time and certainty slows down the motion speed of robot arm. Therefore, to solve this issue, the development of a hardware realization of forward and inverse kinematics for an articulated robot arm is investigated. In this paper, the formulation of the forward and inverse kinematics for a five-axis articulated robot arm is derived firstly. Then, the computations algorithm and its hardware implementation are described. Further, very high speed integrated circuits hardware description language (VHDL) is applied to describe the overall hardware behavior of forward and inverse kinematics. Additionally, finite state machine (FSM) is applied for reducing the hardware resource usage. Finally, for verifying the correctness of forward and inverse kinematics for the five-axis articulated robot arm, a cosimulation work is constructed by ModelSim and Simulink. The hardware of the forward and inverse kinematics is run by ModelSim and a test bench which generates stimulus to ModelSim and displays the output response is taken in Simulink. Under this design, the forward and inverse kinematics algorithms can be completed within one microsecond.

Application of Learning Control Theory to Mechanisms: Part 1 — Inverse Kinematics and Parametric Error Compensation

1994 ◽  
Author(s):  
M. Chew ◽  
M. Phan
Keyword(s):  
Control Theory ◽  
Inverse Kinematics ◽  
Explicit Knowledge ◽  
Learning Control ◽  
Integrated Approach ◽  
Input Function ◽  
Inverse Kinematic ◽  
Output Function ◽  
On Line ◽  
Repetitive Learning

Abstract Fundamental concepts of learning control theory are applied to problems in mechanisms. The theory provides an integrated approach that can simplify the numerical solution of inverse kinematics of mechanisms as well as the practical problem of inverse kinematics in the presence of parametric errors. The procedure makes repeated use of forward kinematics that can be carried out analytically for off-line computation, or experimentally for on-line tuning of mechanisms, to arrive at the correct inverse kinematic solution. With repetitive learning, learning control theory will identify the appropriate input function to a mechanism so that its output will track a given desired output function. The learning process is based on the output error alone, without accurate or explicit knowledge of the physical system, so that the analytical algebraic inverse is avoided. This is achievable even in the presence of geometric nonlinearities as well as parametric errors in mechanisms modeling as long as measurements of the output relative to the given desired output function, are available. A general formalism is presented to explain the applicability of such repetitive learning to mechanism problems. Several examples will illustrate the important benefits of the learning approach using very simple learning rules.

Microfabrication research at the National Submicron Facility

1983 ◽  
Vol 41 ◽  
pp. 86-89
Author(s):  
E.D. Wolf
Keyword(s):  
Integrated Circuits ◽  
Particle Physics ◽  
High Speed ◽  
New Technology ◽  
High Energy ◽  
High Energy Particle ◽  
New Science ◽  
Wide Range ◽  
Intermediate Domain ◽  
Circuit Function

Most microelectronics devices and circuits operate faster, consume less power, execute more functions and cost less per circuit function when the feature-sizes internal to the devices and circuits are made smaller. This is part of the stimulus for the Very High-Speed Integrated Circuits (VHSIC) program. There is also a need for smaller, more sensitive sensors in a wide range of disciplines that includes electrochemistry, neurophysiology and ultra-high pressure solid state research. There is often fundamental new science (and sometimes new technology) to be revealed (and used) when a basic parameter such as size is extended to new dimensions, as is evident at the two extremes of smallness and largeness, high energy particle physics and cosmology, respectively. However, there is also a very important intermediate domain of size that spans from the diameter of a small cluster of atoms up to near one micrometer which may also have just as profound effects on society as “big” physics.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

The Radio Probe™: A New Measurement Tool for High Speed Integrated Circuits

2005 ◽  
Author(s):  
Mark Kimball
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
High Speed ◽  
Attenuation Factor ◽  
Cost Effective ◽  
Frequency Measurement ◽  
Single Frequency ◽  
Measurement Tool ◽  
Probe Design ◽  
Differential Measurement

Abstract This article presents a novel tool designed to allow circuit node measurements in a radio frequency (RF) integrated circuit. The discussion covers RF circuit problems; provides details on the Radio Probe design, which achieves an input impedance of 50Kohms and an overall attenuation factor of 0 dB; and describes signal to noise issues in the output signal, along with their improvement techniques. This cost-effective solution incorporates features that make it well suited to the task of differential measurement of circuit nodes within an RF IC. The Radio Probe concept offers a number of advantages compared to active probes. It is a single frequency measurement tool, so it complements, rather than replaces, active probes.

Electrical Probing and Surface Imaging of Deep Sub-Micron Integrated Circuits

1999 ◽  
Author(s):  
Kenneth Krieg ◽  
Richard Qi ◽  
Douglas Thomson ◽  
Greg Bridges
Keyword(s):  
High Resolution ◽  
Integrated Circuits ◽  
Real Time ◽  
High Speed ◽  
Time Signal ◽  
Surface Imaging ◽  
Atomic Force ◽  
Submicron Structures ◽  
High Resolution Images ◽  
Capacitive Loading

Abstract A contact probing system for surface imaging and real-time signal measurement of deep sub-micron integrated circuits is discussed. The probe fits on a standard probe-station and utilizes a conductive atomic force microscope tip to rapidly measure the surface topography and acquire real-time highfrequency signals from features as small as 0.18 micron. The micromachined probe structure minimizes parasitic coupling and the probe achieves a bandwidth greater than 3 GHz, with a capacitive loading of less than 120 fF. High-resolution images of submicron structures and waveforms acquired from high-speed devices are presented.

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