scholarly journals Characterization of a New 10 kWe High Flux Solar Simulator Via Indirect Radiation Mapping Technique

2019 ◽  
Vol 141 (2) ◽  
Author(s):  
Mostafa Abuseada ◽  
Cédric Ophoff ◽  
Nesrin Ozalp
Keyword(s):  
Heat Flux ◽  
Complementary Metal Oxide Semiconductor ◽  
Threshold Value ◽  
Oxide Semiconductor ◽  
Total Power ◽  
Mapping Technique ◽  
High Flux ◽  
Solar Simulator ◽  
A New Technique

This paper presents characterization of a new high flux solar simulator consisting of a 10 kW Xenon arc via indirect heat flux mapping technique for solar thermochemical applications. The method incorporates the use of a heat flux gauge (HFG), single Lambertian target, complementary metal oxide semiconductor (CMOS) camera, and three-axis optical alignment assembly. The grayscale values are correlated to heat flux values for faster optimization and characterization of the radiation source. Unlike previous work in heat flux characterization that rely on two Lambertian targets, this study implements the use of a single target to eliminate possible errors due to interchanging the targets. The current supplied to the simulator was varied within the range of 120–200 A to change the total power and to mimic the fluctuation in sun's irradiance. Several characteristic parameters of the simulator were studied, including the temporal instability and radial nonuniformity (RNU). In addition, a sensitivity analysis was performed on the number of images captured, which showed a threshold value of at least 30 images for essentially accurate results. The results showed that the flux distribution obtained on a 10 × 10 cm2 target had a peak flux of 6990 kWm−2, total power of 3.49 kW, and half width of 6.25 mm. The study concludes with the illustration and use of a new technique, the merging method, that allows characterization of heat flux distributions on larger areas, which is a promising addition to the present heat flux characterization techniques.

Numerical Characterization of a High Flux Solar Simulator Using Forward and Inverse Methods

2019 ◽  
Vol 142 (2) ◽  
Author(s):  
Mostafa Abuseada ◽  
Nesrin Ozalp
Keyword(s):  
Heat Flux ◽  
Ray Tracing ◽  
Focal Plane ◽  
High Flux ◽  
Solar Simulator ◽  
New Approach ◽  
First Order ◽  
Numerical Characterization ◽  
Tracing Method

Abstract The numerical characterization of a 10 kWe xenon arc high flux solar simulator is thoroughly presented and performed using two approaches: a forward Monte Carlo ray tracing (MCRT) method and an inverse ray tracing method. Experimental characterization was previously performed for the solar simulator using an indirect flux mapping technique, where the experimental heat flux distribution was obtained at the focal plane and additional 12 planes away from the simulator. For the first numerical characterization method, an in-house MCRT code was used to determine the shape of the xenon arc to best model the simulator. It was determined that an isotropic volumetric source consisting of a hemisphere of 1 mm radius that is attached to a cylinder of 1 mm in radius and 10 mm in length well described the experimental results obtained. The in-house code was then used to generate heat flux maps similar to that obtained experimentally and determine the intensity at the focal plane to be used by the inverse ray tracing method presented for its validation. For the inverse method, intensity interpolation schemes of zeroth and first-order were examined in addition to different solution strategies. It is shown that a first-order interpolation scheme unnecessary complicates the inverse problem, leading to larger errors. In addition, a new approach of constraining the formulated system of equations with an equality constraint that works by eliminating intensity values not tracing back to the ellipsoidal reflector is proposed. This new approach provided intensity values with reduced percentage errors.

scholarly journals Design, Modeling, and Characterization of a 10 kWe Metal Halide High Flux Solar Simulator

2018 ◽  
Vol 140 (4) ◽  
Author(s):  
Nathan P. Siegel ◽  
Jeffrey P. Roba
Keyword(s):  
Metal Halide ◽  
Transfer Efficiency ◽  
Total Power ◽  
Normal Vector ◽  
High Flux ◽  
Hardware Cost ◽  
Solar Simulator ◽  
Peak Flux ◽  
Optical Flux

We present the design and characterization of a high flux solar simulator (HFSS) based on metal halide lamps and built from commercially available components. The HFSS that we present was developed to support the evaluation of a solar thermochemical reactor prototype. The HFSS consists of an array of four independent lamp/reflector modules aimed at a common target location. Each module contains one 2500 We lamp and one electroformed ellipsoidal reflector having an interfocal distance of 813 mm. The modules are oriented with an angle relative to the target surface normal vector of 24.5 deg. Design simulations predicted that the peak flux of this HFSS would be 2980 kWth/m2, with a total power delivered to a 6-cm target of 3.3 kWth, for a transfer efficiency of 33.3%. Experimental characterization of the HFSS using optical flux mapping and calorimetry showed that the peak flux at the focal plane reached 2890±170 kWth/m2, while the total power delivered was 3.5±0.21 kWth for a transfer efficiency of 35.3%. The HFSS was built at a material cost of ∼$2700.00/module and a total hardware cost of ∼$11,000.00 for the four-lamp array. A seven-lamp version of this HFSS is predicted to deliver 5.6 kWth to a 6 cm diameter target at a peak flux of 4900 kWth/m2 at a hardware cost of ∼$19,000.00 ($3400.00/kWth delivered, $1100.00/kWe).

Characterization of High-Performance Polycrystalline Silicon Complementary Metal–Oxide–Semiconductor Circuits

2007 ◽  
Vol 46 (1) ◽  
pp. 51-55 ◽  
Author(s):  
Genshiro Kawachi ◽  
Yoshiaki Nakazaki ◽  
Hiroyuki Ogawa ◽  
Masayuki Jyumonji ◽  
Noritaka Akita ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Circuits

scholarly journals Characterization of dislocations in germanium layers grown on (011)- and (111)-oriented silicon by coplanar and noncoplanar X-ray diffraction

2015 ◽  
Vol 48 (3) ◽  
pp. 655-665 ◽  
Author(s):  
Andrei Benediktovitch ◽  
Alexei Zhylik ◽  
Tatjana Ulyanenkova ◽  
Maksym Myronov ◽  
Alex Ulyanenkov
Keyword(s):  
Dislocation Line ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lattice Constants ◽  
Silicon And Germanium

Strained germanium grown on silicon with nonstandard surface orientations like (011) or (111) is a promising material for various semiconductor applications, for example complementary metal-oxide semiconductor transistors. However, because of the large mismatch between the lattice constants of silicon and germanium, the growth of such systems is challenged by nucleation and propagation of threading and misfit dislocations that degrade the electrical properties. To analyze the dislocation microstructure of Ge films on Si(011) and Si(111), a set of reciprocal space maps and profiles measured in noncoplanar geometry was collected. To process the data, the approach proposed by Kaganer, Köhler, Schmidbauer, Opitz & Jenichen [Phys. Rev. B, (1997),55, 1793–1810] has been generalized to an arbitrary surface orientation, arbitrary dislocation line direction and noncoplanar measurement scheme.

scholarly journals Dielectrophoretic Immobilization of Yeast Cells Using CMOS Integrated Microfluidics

Micromachines ◽  
2020 ◽  
Vol 11 (5) ◽  
pp. 501
Author(s):  
Honeyeh Matbaechi Ettehad ◽  
Pouya Soltani Zarrin ◽  
Ralph Hölzel ◽  
Christian Wenger
Keyword(s):  
Complementary Metal Oxide Semiconductor ◽  
Free Cell ◽  
Blood Analysis ◽  
Oxide Semiconductor ◽  
Yeast Cells ◽  
Label Free ◽  
Viable Cells ◽  
Diagnostic Applications ◽  
Set Up

This paper presents a dielectrophoretic system for the immobilization and separation of live and dead cells. Dielectrophoresis (DEP) is a promising and efficient investigation technique for the development of novel lab-on-a-chip devices, which characterizes cells or particles based on their intrinsic and physical properties. Using this method, specific cells can be isolated from their medium carrier or the mixture of cell suspensions (e.g., separation of viable cells from non-viable cells). Main advantages of this method, which makes it favorable for disease (blood) analysis and diagnostic applications are, the preservation of the cell properties during measurements, label-free cell identification, and low set up cost. In this study, we validated the capability of complementary metal-oxide-semiconductor (CMOS) integrated microfluidic devices for the manipulation and characterization of live and dead yeast cells using dielectrophoretic forces. This approach successfully trapped live yeast cells and purified them from dead cells. Numerical simulations based on a two-layer model for yeast cells flowing in the channel were used to predict the trajectories of the cells with respect to their dielectric properties, varying excitation voltage, and frequency.

Design and characterization of a high-flux non-coaxial concentrating solar simulator

2018 ◽  
Vol 145 ◽  
pp. 201-211 ◽  
Author(s):  
Jun Xiao ◽  
Xiudong Wei ◽  
Raúl Navío Gilaber ◽  
Yan Zhang ◽  
Zengyao Li
Keyword(s):  
High Flux ◽  
Solar Simulator

Nano-Watt Heat Flux Sensor Considering Contact Resistance at Thermopile Junctions

2011 ◽  
Author(s):  
Sung-Ki Nam ◽  
Su-Heon Jeong ◽  
Sun-Kyu Lee
Keyword(s):  
Heat Flux ◽  
Contact Resistance ◽  
Contact Region ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Heat Flux Sensor ◽  
Contact Conditions ◽  
In Series ◽  
Flux Sensor

This paper presents design and fabrication procedures for nano-Watt resolution of heat flux sensor. To enhance the resolution, a contact resistance of thermopile is especially focused. CMOS (Complementary Metal-Oxide Semiconductor-compatible) process was used for deposition of gold and chromium which are composed of thermopile. The most important part of thermopile is the contact region of the junctions which generate electrical noises as well as thermoelectric power. The effect of contact conditions at junction point was investigated. The fabricated sensor has 100 thermocouples connected in series and its active junction is on the membrane which directly affects the sensitivity. Developed sensor system provides 0.0629V/nW of sensitivity and 1nW of high resolution.

scholarly journals Approximate Array Multipliers

Electronics ◽  
2021 ◽  
Vol 10 (5) ◽  
pp. 630
Author(s):  
Padmanabhan Balasubramanian ◽  
Raunaq Nayar ◽  
Douglas L. Maskell
Keyword(s):  
Critical Path ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Total Power ◽  
Path Delay ◽  
Input And Output ◽  
Critical Path Delay ◽  
Standard Design ◽  
Array Multiplier ◽  
Array Multipliers

This article describes the design of approximate array multipliers by making vertical or horizontal cuts in an accurate array multiplier followed by different input and output assignments within the multiplier. We consider a digital image denoising application and show how different combinations of input and output assignments in an approximate array multiplier affect the quality of the denoised images. We consider the accurate array multiplier and several approximate array multipliers for synthesis. The multipliers were described in Verilog hardware description language and synthesized by Synopsys Design Compiler using a 32/28-nm complementary metal-oxide-semiconductor technology. The results show that compared to the accurate array multiplier, one of the proposed approximate array multipliers viz. PAAM01-V7 achieves a 28% reduction in critical path delay, 75.8% reduction in power, and 64.6% reduction in area while enabling the production of a denoised image that is comparable in quality to the image denoised using the accurate array multiplier. The standard design metrics such as critical path delay, total power dissipation, and area of the accurate and approximate multipliers are given, the error parameters of the approximate array multipliers are provided, and the original image, the noisy image, and the denoised images are also depicted for comparison.

On the Electrical Characterization of High-ĸ Dielectrics

MRS Bulletin ◽  
2002 ◽  
Vol 27 (3) ◽  
pp. 222-225 ◽  
Author(s):  
R. Degraeve ◽  
E. Cartier ◽  
T. Kauerauf ◽  
R. Carter ◽  
L. Pantisano ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electrode Materials ◽  
Gate Dielectric ◽  
Electrical Characterization ◽  
Complementary Metal Oxide Semiconductor ◽  
Dielectric Materials ◽  
Oxide Semiconductor ◽  
High Q ◽  
New Si

AbstractThe continual scaling of complementary metal oxide semiconductor (CMOS) technologies has pushed the Si-SiO2 system to its very limits and has led to the consideration of a number of alternative high-ĸ gate dielectric materials. In the end, it will be the electrical properties of the new Si/high-ĸ system that will determine its usefulness in future CMOS generations. For this reason, the study of the electrical properties of high-ĸ gate insulators is crucial. We present an overview of some of the electrical characterization techniques and reliability tests used to evaluate possible high-ĸ gate materials. Most of these techniques are well known from the characterization of SiO2 layers, but there are some additional complications, such as the presence of several different layers within one gate stack or the use of different gate electrode materials. These make the interpretation and comparison of experimental results more troublesome.

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