Selective Band Gap to Suppress the Spurious Acoustic Mode in Film Bulk Acoustic Resonator Structures

2018 ◽  
Vol 140 (3) ◽  
Author(s):  
Rafik Serhane ◽  
Fayçal Hadj-Larbi ◽  
Abdelkader Hassein-Bey ◽  
Abdelkrim Khelif

In this work, we investigate numerically the propagation of Lamb waves in a film bulk acoustic resonator (FBAR) structure formed by piezoelectric ZnO layer sandwiched between two Mo electrodes coupled with Bragg reflectors; the system is thus considered as a phononic-crystal (PnC) plate. The aim is to suppress the first-order symmetric Lamb wave mode considered as a spurious mode caused by the establishment of a lateral standing wave due to the reflection at the embedded lateral extremities of the structure; this spurious mode is superposing to the main longitudinal mode resonance of the FBAR. The finite element study, using harmonic and eigen-frequency analyses, is performed on the section of FBAR structure coupled with the PnC. In the presence of PnC, the simulation results show the evidence of a selective band gap where the parasitic mode is prohibited. The quality factor of the FBAR is enhanced by the introduction of the PnC. Indeed, the resonance and antiresonance frequencies passed from 1000 and 980 (without PnC) to 2350 and 1230 (with PnC), respectively. This is accompanied by a decrease in the electromechanical coupling coefficient from 10.60% to 6.61%.

2000 ◽  
Vol 655 ◽  
Author(s):  
Paul Kirby ◽  
Qing-Xin Su ◽  
Eiju Komuro ◽  
Masaaki Imura ◽  
Qi Zhang ◽  
...  

AbstractBoth ZnO and PZT Thin Film Bulk Acoustic Resonator filters were fabricated, tested and modeled in this study. The development of an accurate Mason model allows the effect of particular parasitic components on the microwave s-parameters in the region of the series and parallel resonances to be identified. The parasitic components that limit the performance of our ZnO and PbZr0.3Ti0.7O3 Thin Film Bulk Acoustic Resonator filters are analysed. From an analysis of PbZr0.3Ti0.7O3 Thin Film Bulk Acoustic Resonator measurements values for the longitudinal acoustic velocity and electromechanical coupling coefficient can be derived. Measured PbZr0.3Ti0.7O3 Thin Film Bulk Acoustic Resonator filter responses confirm that the larger electromechanical coupling coefficients in this material compared to ZnO give wider filter band-widths.


2009 ◽  
Vol 95 (18) ◽  
pp. 182106 ◽  
Author(s):  
M. Pijolat ◽  
S. Loubriat ◽  
S. Queste ◽  
D. Mercier ◽  
A. Reinhardt ◽  
...  

Micromachines ◽  
2022 ◽  
Vol 13 (1) ◽  
pp. 102
Author(s):  
Chao Gao ◽  
Yang Zou ◽  
Jie Zhou ◽  
Yan Liu ◽  
Wenjuan Liu ◽  
...  

As radio-frequency (RF) communication becomes more ubiquitous globally, film bulk acoustic resonators (FBAR) have attracted great attention for their superior performance. One of the key parameters of an FBAR, the effective electromechanical coupling coefficient (Keff2), has a great influence on the bandwidth of RF filters. In this work, we propose a feasible method to tune the Keff2 of the FBAR by etching the piezoelectric material to form a trench around the active area of the FBAR. The influence of the position of the etching trench on the Keff2 of the FBAR was investigated by 3D finite element modeling and experimental fabricating. Meanwhile, a theoretical electrical model was presented to test and verify the simulated and measured results. The Keff2 of the FBAR tended to be reduced when the distance between the edge of the top electrode and the edge of the trench was increased, but the Q value of the FBAR was not degraded. This work provides a new possibility for tuning the Keff2 of resonators to meet the requirements of different filter bandwidths.


Sensors ◽  
2020 ◽  
Vol 20 (5) ◽  
pp. 1346
Author(s):  
Ting Wu ◽  
Hao Jin ◽  
Shurong Dong ◽  
Weipeng Xuan ◽  
Hongsheng Xu ◽  
...  

This paper reports a novel flexible film bulk acoustic resonator (FBAR) based on β -phase polyvinylidene fluoride (PVDF) piezoelectric polymer. The proposed device was simulated and evaluated; then, a low-temperature photolithography process with a double exposure method was developed to pattern the electrodes for the device, which enabled the device to retain the piezoelectric properties of the β -phase PVDF film. Results showed that the β-phase PVDF FBARs had a resonant frequency round 9.212 MHz with a high electromechanical coupling coefficient ( k 2 ) of 12.76% ± 0.56%. The device performed well over a wide bending-strain range up to 2400 μ ε owing to its excellent flexibility. It showed good stability as a strain sensor with a sensitivity of 80 Hz / μ ε , and no visible deterioration was observed after cyclic bending tests. The PVDF FBAR also exhibited an exceptionally large temperature coefficient of frequency (TCF) of −4630 ppm / K , two orders of magnitude larger than those of other FBARs based on common inorganic piezoelectric materials, extraordinarily high sensitivity for temperature sensing. All results showed that β -phase PVDF FBARs have the potential to expand the application scope for future flexible electronics.


2011 ◽  
Vol 3 (2) ◽  
pp. 91-98 ◽  
Author(s):  
Xu Zhang ◽  
Wencheng Xu ◽  
Junseok Chae

2007 ◽  
Vol 400 (1-2) ◽  
pp. 38-41 ◽  
Author(s):  
Zhi Yan ◽  
Yi Ming Mi ◽  
Zhi Tang Song ◽  
Wei Li Liu ◽  
Hong Ji ◽  
...  

2005 ◽  
Vol 117 (1) ◽  
pp. 62-70 ◽  
Author(s):  
Yu-Ri Kang ◽  
Sung-Chul Kang ◽  
Kyeong-Kap Paek ◽  
Yong-Kook Kim ◽  
Soo-Won Kim ◽  
...  

2005 ◽  
Vol 69 (1) ◽  
pp. 323-332 ◽  
Author(s):  
Heechul Lee ◽  
Jaeyeong Park ◽  
Kyunghak Lee ◽  
Youngjoon Ko ◽  
Jonguk Bu

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