scholarly journals On the Steady-State Temperature Rise During Laser Heating of Multilayer Thin Films in Optical Pump–Probe Techniques

2018 ◽  
Vol 140 (5) ◽  
Author(s):  
Jeffrey L. Braun ◽  
Chester J. Szwejkowski ◽  
Ashutosh Giri ◽  
Patrick E. Hopkins
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Steady State ◽  
Temperature Rise ◽  
Laser Heating ◽  
Thermal Parameters ◽  
Heat Diffusion ◽  
Multilayer Thin Films ◽  
Steady State Temperature

In this study, we calculate the steady-state temperature rise that results from laser heating of multilayer thin films using the heat diffusion equation. For time- and frequency-domain thermoreflectance (TDTR and FDTR) that rely on modulated laser sources, we decouple the modulated and steady-state temperature profiles to understand the conditions needed to achieve a single temperature approximation throughout the experimental volume, allowing for the estimation of spatially invariant thermal parameters within this volume. We consider low thermal conductivity materials, including amorphous silicon dioxide (a-SiO2), polymers, and disordered C60, to demonstrate that often-used analytical expressions fail to capture this temperature rise under realistic experimental conditions, such as when a thin-film metal transducer is used or when pump and probe spot sizes are significantly different. To validate these findings and demonstrate a practical approach to simultaneously calculate the steady-state temperature and extract thermal parameters in TDTR, we present an iterative algorithm for obtaining the steady-state temperature rise and measure the thermal conductivity and thermal boundary conductance of a-SiO2 with a 65-nm gold thin film transducer. Furthermore, we discuss methods of heat dissipation to include the use of conductive substrates as well as the use of bidirectional heat flow geometries. Finally, we quantify the influence of the optical penetration depth (OPD) on the steady-state temperature rise to reveal that only when the OPD approaches the characteristic length of the temperature decay does it alter the temperature profile relative to the surface heating condition.

Steady-state heat sink analysis for two-terminal microwave oscillator devices with temperature dependent thermal conductivity

1993 ◽  
Vol 441 (1911) ◽  
pp. 181-189 ◽  
Keyword(s):  
Thermal Conductivity ◽  
Heat Flux ◽  
Steady State ◽  
Temperature Distribution ◽  
Temperature Rise ◽  
Heat Sink ◽  
Maximum Temperature ◽  
Microwave Oscillators ◽  
Steady State Temperature ◽  
Steady State Heat

A theoretical analysis to calculate the steady-state temperature distribution within a cylindrical heat sink configuration, where the thermal conductivity is dependent on the temperature, is outlined. The analysis applies to any heat sink arrangement that can be treated as one or more homogeneous solid cylinders mounted on a semi-infinite heat sink, where the heat flux incident on both faces of each cylinder is uniform over a given centralized circular region. The model is used to analyse the temperature distribution within the heat sink configurations used commonly to package two-terminal semiconductor devices that are operated as sources of electromagnetic radiation in microwave oscillators. Results are presented that show how the maximum temperature rise within commercially available heat sink packages, depends on the input heat flux and the dimensions and thermal conductivity of the materials. Furthermore, results that show how the temperature rise varies across the interfaces of given heat sink configurations, similar to those used commercially, are given also.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

The use of transmission and analytical electron microscopy in studying reactions and phase transformations in thin film

1993 ◽  
Vol 51 ◽  
pp. 842-843
Author(s):  
K. Barmak
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transformations ◽  
Analytical Electron Microscopy ◽  
Ex Situ ◽  
Multilayer Thin Films ◽  
Absolute Concentration ◽  
Analytical Electron ◽  
Deposition Step

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.

Determination of Thermal Conductivity of Amorphous Silicon Thin Films via Non-Contacting Optical Probing

2006 ◽  
Vol 326-328 ◽  
pp. 689-692
Author(s):  
Seung Jae Moon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Amorphous Silicon ◽  
Optical Transmission ◽  
Film Deposition ◽  
Transmission Measurement ◽  
Conductive Heat ◽  
Optical Transmission Measurement

The thermal conductivity of amorphous silicon (a-Si) thin films is determined by using the non-intrusive, in-situ optical transmission measurement. The thermal conductivity of a-Si is a key parameter in understanding the mechanism of the recrystallization of polysilicon (p-Si) during the laser annealing process to fabricate the thin film transistors with uniform characteristics which are used as switches in the active matrix liquid crystal displays. Since it is well known that the physical properties are dependent on the process parameters of the thin film deposition process, the thermal conductivity should be measured. The temperature dependence of the film complex refractive index is determined by spectroscopic ellipsometry. A nanosecond KrF excimer laser at the wavelength of 248 nm is used to raise the temperature of the thin films without melting of the thin film. In-situ transmission signal is obtained during the heating process. The acquired transmission signal is fitted with predictions obtained by coupling conductive heat transfer with multi-layer thin film optics in the optical transmission measurement.

Improvement of Thermal Conductivity of Electroplated Copper Thin-Film Interconnections by Controlling Their Micro Texture

2014 ◽  
Author(s):  
Pornvitoo Rittinon ◽  
Ken Suzuki ◽  
Hideo Miura
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Grain Boundaries ◽  
Diffraction Method ◽  
Electron Back Scatter Diffraction ◽  
High Resistivity ◽  
Copper Thin Film ◽  
Electroplated Copper ◽  
The Relationship

Copper thin films are indispensable for the interconnections in the advanced electronic products, such as TSV (Trough Silicon Via), fine bumps, and thin-film interconnections in various devices and interposers. However, it has been reported that both electrical and mechanical properties of the films vary drastically comparing with those of conventional bulk copper. The main reason for the variation can be attributed to the fluctuation of the crystallinity of grain boundaries in the films. Porous or sparse grain boundaries show very high resistivity and brittle fracture characteristic in the films. Thus, the thermal conductivity of the electroplated copper thin films should be varied drastically depending on their micro texture based on the Wiedemann-Franz’s law. Since the copper interconnections are used not only for the electrical conduction but also for the thermal conduction, it is very important to quantitatively evaluate the crystallinity of the polycrystalline thin-film materials and clarify the relationship between the crystallinity and thermal properties of the films. The crystallinity of the interconnections were quantitatively evaluated using an electron back-scatter diffraction method. It was found that the porous grain boundaries which contain a significant amount of vacancies increase the local electrical resistance in the interconnections, and thus, cause the local high Joule heating. Such porous grain boundaries can be eliminated by control the crystallinity of the seed layer material on which the electroplated copper thin film is electroplated.

Synthesis and Electrical Characterization of Multilayer Thin Films Designed by Layer-by-Layer Self Assembly of Nanoparticles

2010 ◽  
Vol 11 ◽  
pp. 1-6 ◽  
Author(s):  
Sujira Promnimit ◽  
Joydeep Dutta
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Self Organization ◽  
Colloidal Nanoparticles ◽  
Multilayer Thin Films ◽  
Layer By Layer ◽  
Multilayer Thin Film ◽  
Research Attention ◽  
Onset Voltage ◽  
Thin Film Devices

In this work, we report the directed self organization of multilayer thin film devices with colloidal nanoparticles through Layer-by-Layer (LbL) technique [1]. Self-organization of nanoparticles into assemblies to create novel nanostructures is getting increasing research attention in microelectronics, medical, energy and environmental applications. Directed self-organization of nanoparticles [2] into multilayer thin films were achieved by LbL growth through the interaction of oppositely charged of colloidal nanoparticles on substrates of any kind and shapes. Multilayer thin film devices were fabricated using multilayers of gold (conducting) nanoparticles separated by a dielectric nanoparticulate layer of zinc sulphide. The thin films obtained have been studied extensively and the changes in surface morphology, the optical absorption characteristics, thickness, uniformity, adhesion, and conduction behavior are reported. Current voltage (I-V) characteristics of multilayer devices with an increasing number of deposition cycles show an initial current blockade until an onset voltage value, which increases linearly upon the additional layers stacked in devices [3]. A conductive behavior of the device was observed upon exceeding the onset voltage. Moreover, I-V behavior showed that the conduction onset voltage increases linearly depending on the numbers of layers in the final device controlled by the deposition cycles. Systematic I-V characteristics in the forward and reverse biased conditions demonstrated rectifying behaviors in the onset of conduction voltage which makes these films attractive for future electronic device applications.

scholarly journals Effects of LaNiO3 Seed Layer on the Microstructure and Electrical Properties of Ferroelectric BZT/PZT/BZT Thin Films

2021 ◽  
Vol 8 ◽  
Author(s):  
Jinyu Ruan ◽  
Chao Yin ◽  
Tiandong Zhang ◽  
Hao Pan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Electrical Properties ◽  
Seed Layer ◽  
Ferroelectric Properties ◽  
Lower Surface ◽  
Multilayer Films ◽  
Multilayer Thin Films ◽  
Orientation Growth

Ferroelectric multilayer films attract great attention for a wide variation of applications. The synergistic effect by combining different functional layers induces distinctive electrical properties. In this study, ferroelectric BaZr0.2Ti0.8O3/PbZr0.52Ti0.48O3/BaZr0.2Ti0.8O3 (BZT/PZT/BZT) multilayer thin films are designed and fabricated by using the magnetron sputtering method, and a LaNiO3 (LNO) seed layer is introduced. The microstructures and electrical properties of the BZT/PZT/BZT films with and without the LNO seed layer are systematically studied. The results show that the BZT/PZT/BZT/LNO thin film exhibits much lower surface roughness and a preferred (100)-orientation growth, with the growth template and tensile stress provided by the LNO layer. Moreover, an enhanced dielectric constant, decreased dielectric loss, and improved ferroelectric properties are achieved in BZT/PZT/BZT/LNO thin films. This work reveals that the seed layer can play an important role in improving the microstructure and properties of ferroelectric multilayer films.

Temperature Dependence of Thermal Conductivity of Amorphous and Crystal Thin Film by Molecular Dynamics Simulation

2007 ◽  
Author(s):  
Zhengxing Huang ◽  
Zhenan Tang ◽  
Suyuan Bai ◽  
Jun Yu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Integrated Circuits ◽  
Temperature Dependence ◽  
Amorphous Materials ◽  
Dynamics Simulation ◽  
Amorphous Sio2 ◽  
Film Boundary ◽  
Different Temperatures

For crystal materials, thermal conductivity (TC) is proportional to T3 at low temperatures and to T−1 at high temperatures. TCs of most amorphous materials decrease with the decreasing temperatures. If a material is thin film, boundary will influence the TC and then influence the temperature dependence. In this paper, we calculate the TC of crystal and amorphous SiO2 thin films, which is a commonly used material in micro devices and Integrated Circuits, by NEMD simulations. The calculation temperatures are from 100K to 700K and the thicknesses are from 2nm to 8nm. TCs of crystal thin films reach their peak values at different temperatures for different thicknesses. The smaller thickness the larger peak values obtained. But for amorphous thin films, the results show that the temperature dependence of thin films is the same as bulk materials and not relative to their thicknesses. The obtained temperature dependence of the thin films is consistent with some previous measurements and the theory predictions.

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