Mixed Array of Compliant Interconnects to Balance Mechanical and Electrical Characteristics

2015 ◽  
Vol 137 (3) ◽  
Author(s):  
R. I. Okereke ◽  
S. K. Sitaraman
Keyword(s):  
Solder Bump ◽  
Coefficient Of Thermal Expansion ◽  
Electrical Characteristics ◽  
Experimental Characterization ◽  
Cross Sectional ◽  
High Compliance ◽  
Mechanical Compliance ◽  
Cte Mismatch ◽  
Path Lengths

Various designs of compliant interconnects are being pursued in universities and industry to accommodate the coefficient of thermal expansion (CTE) mismatch between die and substrate or substrate and board. Although such interconnects are able to mechanically decouple the components, electrical parasitics of compliant interconnects are often high compared to the electrical parasitics of solder bump or solder ball interconnects. This increase in electrical parasitics is due to the fact that compliant interconnects typically having longer path lengths and smaller cross-sectional areas to provide compliance, which in turn, increases their electrical parasitics. In this paper, we present a mixed array of compliant interconnects as a tradeoff between mechanical compliance and electrical parasitics. In the proposed implementation, the die area is subdivided into three regions where high compliance, medium-compliance, and low-compliance interconnect variants are situated in the outer, middle, and inner regions of the die, respectively. By introducing the low-compliance variants into the assembly, interconnects with greatly reduced electrical parasitics can be used as power/ground interconnects, while the high-compliance interconnects, situated near the die edges, can be used as signal interconnects. This paper demonstrates the implementation of this configuration and also presents the experimental characterization of such heterogeneous array of interconnects.

Development of G-Helix Structure as Off-Chip Interconnect

2004 ◽  
Vol 126 (2) ◽  
pp. 237-246 ◽  
Author(s):  
Qi Zhu ◽  
Lunyu Ma ◽  
Suresh K. Sitaraman
Keyword(s):  
Mechanical Performance ◽  
Coefficient Of Thermal Expansion ◽  
Mechanical Analysis ◽  
Organic Substrate ◽  
Electrical Performance ◽  
Wafer Level ◽  
Wafer Level Packaging ◽  
Package Weight ◽  
Mechanical Compliance ◽  
Cte Mismatch

Microsystem packages continue to demand lower cost, higher reliability, better performance and smaller size. Compliant wafer-level interconnects show great potential for next-generation packaging. G-Helix, an electroplated compliant wafer-level chip-to-substrate interconnect can facilitate wafer-level probing as well as wafer-level packaging without the need for an underfill. The fabrication of the G-Helix interconnect is similar to conventional IC fabrication process and is based on electroplating and photolithography. G-Helix interconnect has good mechanical compliance in the three orthogonal directions and can accommodate the differential displacement induced by the coefficient of thermal expansion (CTE) mismatch between the silicon die and the organic substrate. In this paper, we report the wafer-level fabrication of an area-arrayed G-Helix interconnects. The geometry effect on the mechanical compliance and electrical parasitics of G-Helix interconnects have been studied. Thinner and narrower arcuate beams with larger radius and taller post are found to have better mechanical compliance. However, it is also found that structures with excellent mechanical compliance may not have good electrical performance. Therefore, a trade off is needed. Using response surface methodology (RSM), an optimization has been done. Furthermore, reliability of the optimized G-helix interconnects in a silicon-on-organic substrate assembly has been assessed, which includes the package weight and thermo-mechanical analysis. The pitch size effect on the electrical and mechanical performance of G-Helix interconnects has also been studied.

scholarly journals Characterization of Residual Stresses in Veneering Ceramics for Prostheses with Zirconia Framework

2018 ◽  
Vol 29 (4) ◽  
pp. 347-353 ◽  
Author(s):  
Vagner Flávio Reginato ◽  
Daniel Takanori Kemmoku ◽  
Ricardo Armini Caldas¹ ◽  
Ataís Bacchi³ ◽  
Carmem Silvia Pfeifer ◽  
...  
Keyword(s):  
Residual Stresses ◽  
Coefficient Of Thermal Expansion ◽  
Three Dimensional ◽  
Maximum Principal Stress ◽  
The Finite Element Method ◽  
Three Dimensional Model ◽  
Linear Contraction ◽  
Cte Mismatch ◽  
Fixed Prosthesis

Abstract The aim of this study was to evaluate the influence of the coefficient of thermal expansion (CTE or α) and glass transition temperature (Tg) of three veneering ceramics used with zirconia frameworks of full-arch fixed prostheses. The generation of residual stresses and linear contraction after the simulation of the cooling process and mechanical loading were measured. The analysis was based on the finite element method in three-dimensional model of a maxillary full-arch fixed prosthesis with zirconia framework (e.max ZirCAD) and veneer by felsdpathic ceramics (GEC - IPS e.max Ceram, GVM - Vita VM9 and GLC - Lava Ceram). The linear contraction simulation was performed by cooling the structures from the Tg of each veneer ceramic at room temperature (25°C). A loading of 100 N on the occlusal region of the first molar was performed. The magnitude of the maximum principal stress (smax) and linear contraction were evaluated. The levels of CTE mismatch between veneering ceramics and framework showed no relevant influence on smax and linear contraction. The Tg values of the veneer ceramic showed to be directly proportional to amount of smax and linear contraction. The GEC presented the highest values of smax and linear contraction. The GVM and GLC did not present significant differences between them. In conclusion, GVM was similar to GLC, while GEC presented differences in relation to other veneer ceramics in terms of residual stress and linear contraction.

scholarly journals Experimental Characterization of Pantograph Arcs and Transient Conducted Phenomena in DC Railways

ACTA IMEKO ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 10 ◽  
Author(s):  
Andrea Mariscotti ◽  
Domenico Giordano
Keyword(s):  
Transportation Systems ◽  
Electric Arc ◽  
Electrical Characteristics ◽  
Experimental Characterization ◽  
Transient Event ◽  
Current Collection ◽  
Spectral Signatures ◽  
Wide Range ◽  
Quality Measurements

<p class="Abstract">An electric arc is an example of a transient event that is quite common in electrified transportation systems as by-product of the current collection mechanism. As a broadband transient, an electric arc excites a wide range of (often oscillatory) responses related to the substation and onboard filters, as well as the line resonances and anti-resonances. Similarly do the charging of onboard filter and other related inrush events. This work considers the electrical characteristics of these transients and of the excited responses in order to define their typical spectral signatures in DC railways and take them into account concerning their impact on Power Quality measurements and the measurements of instruments deployed onboard.</p>

Study of Electroplated Compliant G-Helix Chip-to-Substrate Interconnects

2003 ◽  
Author(s):  
Qi Zhu ◽  
Lunyu Ma ◽  
Suresh K. Sitaraman
Keyword(s):  
Lower Cost ◽  
Coefficient Of Thermal Expansion ◽  
Organic Substrate ◽  
Electrical Performance ◽  
Wafer Level ◽  
Wafer Level Packaging ◽  
Cross Section Area ◽  
Section Area ◽  
Mechanical Compliance ◽  
Cte Mismatch

Microsystem packages continue to demand lower cost, higher reliability, better performance and smaller size. Compliant wafer-level interconnects show great potential for next-generation packaging. G-Helix, an electroplated compliant wafer-level chip-to-substrate interconnect can facilitate wafer-level probing as well as wafer-level packaging without the need for an underfill. The fabrication of the G-Helix interconnect is similar to conventional IC fabrication process and is based on electroplating and photolithography. G-Helix interconnect has good mechanical compliance in the three orthogonal directions and can accommodate the differential displacement induced by the coefficient of thermal expansion (CTE) mismatch between the silicon die and the organic substrate. In this paper, we report the wafer-level fabrication of an area-arrayed G-Helix interconnects. The geometry effect on the mechanical compliance and electrical parasitics of G-Helix interconnects have been studied. Thinner and narrower arcuate beams with larger radius and taller post are found to have better mechanical compliance. However, it is also found that structures with excellent mechanical compliance may not have good electrical performance. Therefore, a trade off is needed. Using response surface methodology (RSM), an optimization has been done, and the optimal compliant G-Helix interconnect will have a total standoff height of 64 μm, radius of 36 μm and cross-section area of 93 μm2.

Characterization of the torsional vibration behavior of circular and rectangular cross-sectional arc springs: Theory and experiments

2021 ◽  
Vol 63 (2) ◽  
pp. 113-118
Author(s):  
Samet Fidanciogullari ◽  
Ahmet Yildiz
Keyword(s):  
Torsional Vibration ◽  
Experimental Tests ◽  
Experimental Results ◽  
Experimental Characterization ◽  
Cross Sectional ◽  
Vibration Behavior ◽  
The Masses ◽  
Theory And Experiments ◽  
Good Agreement

Abstract This paper is about the theoretical and experimental characterizations of the torsional vibration behavior of circular and rectangular cross-sectional arc springs. Firstly, the dynamic behaviors of arc springs with different cross-sectional wire profiles designed for a dual mass flywheel are modeled by mathematical formulations. After that, experimental tests are performed to verify these models and it is observed that the stiffness characterizations are in good agreement with experimental results. Lastly, the masses of two different arc springs are compared by regarding the same vibration stiffness criteria and it is demonstrated that the rectangular wire provides an arc spring with a 9.44 vol.-% lighter structure. Thus, the outcomes of this paper can be good references for the manufacturer about the numerical and experimental characterization of dual mass flywheel springs, especially for rectangular wire arc springs.

Microstructural characterization of CoPtCr/Cr thin film disks by cross-section TEM and elongated probe micro-diffraction

1991 ◽  
Vol 49 ◽  
pp. 762-763
Author(s):  
M.A. Parker ◽  
K.E. Johnson ◽  
C. Hwang ◽  
A. Bermea
Keyword(s):  
Magnetic Recording ◽  
Electron Probe ◽  
Microstructural Characterization ◽  
Crystallographic Structure ◽  
Recording Media ◽  
Layer By Layer ◽  
Cross Sectional ◽  
New Techniques ◽  
Polished Side

We have reported the dependence of the magnetic and recording properties of CoPtCr recording media on the thickness of the Cr underlayer. It was inferred from XRD data that grain-to-grain epitaxy of the Cr with the CoPtCr was responsible for the interaction observed between these layers. However, no cross-sectional TEM (XTEM) work was performed to confirm this inference. In this paper, we report the application of new techniques for preparing XTEM specimens from actual magnetic recording disks, and for layer-by-layer micro-diffraction with an electron probe elongated parallel to the surface of the deposited structure which elucidate the effect of the crystallographic structure of the Cr on that of the CoPtCr.XTEM specimens were prepared from magnetic recording disks by modifying a technique used to prepare semiconductor specimens. After 3mm disks were prepared per the standard XTEM procedure, these disks were then lapped using a tripod polishing device. A grid with a single 1mmx2mm hole was then glued with M-bond 610 to the polished side of the disk.

TEM characterization of silicon epitaxial layer grown on Si-TaS2, eutectic composites

1991 ◽  
Vol 49 ◽  
pp. 802-803
Author(s):  
C.M. Sung ◽  
M. Levinson ◽  
M. Tabasky ◽  
K. Ostreicher ◽  
B.M. Ditchek
Keyword(s):  
Substrate Surface ◽  
Bulk Sample ◽  
Surface Cleaning ◽  
Native Oxide ◽  
Czochralski Growth ◽  
Ion Milling ◽  
Cross Sectional ◽  
Cleaning Methods ◽  
Field Emission Cathodes

Directionally solidified Si/TaSi2 eutectic composites for the development of electronic devices (e.g. photodiodes and field-emission cathodes) were made using a Czochralski growth technique. High quality epitaxial growth of silicon on the eutectic composite substrates requires a clean silicon substrate surface prior to the growth process. Hence a preepitaxial surface cleaning step is highly desirable. The purpose of this paper is to investigate the effect of surface cleaning methods on the epilayer/substrate interface and the characterization of silicon epilayers grown on Si/TaSi2 substrates by TEM.Wafers were cut normal to the <111> growth axis of the silicon matrix from an approximately 1 cm diameter Si/TaSi2 composite boule. Four pre-treatments were employed to remove native oxide and other contaminants: 1) No treatment, 2) HF only; 3) HC1 only; and 4) both HF and HCl. The cross-sectional specimens for TEM study were prepared by cutting the bulk sample into sheets perpendicular to the TaSi2 fiber axes. The material was then prepared in the usual manner to produce samples having a thickness of 10μm. The final step was ion milling in Ar+ until breakthrough occurred. The TEM samples were then analyzed at 120 keV using the Philips EM400T.

Characterization of Rh/Si multilayer structure by HREM and HAADF

1992 ◽  
Vol 50 (1) ◽  
pp. 122-123
Author(s):  
Y. Cheng ◽  
J. Liu ◽  
M.B. Stearns ◽  
D.G. Steams
Keyword(s):  
Normal Incidence ◽  
High Resolution Electron Microscopy ◽  
X Rays ◽  
Beam Direction ◽  
Cross Sectional ◽  
Optical Elements ◽  
Resolution Electron ◽  
Point To Point ◽  
Better Than

The Rh/Si multilayer (ML) thin films are promising optical elements for soft x-rays since they have a calculated normal incidence reflectivity of ∼60% at a x-ray wavelength of ∼13 nm. However, a reflectivity of only 28% has been attained to date for ML fabricated by dc magnetron sputtering. In order to determine the cause of this degraded reflectivity the microstructure of this ML was examined on cross-sectional specimens with two high-resolution electron microscopy (HREM and HAADF) techniques.Cross-sectional specimens were made from an as-prepared ML sample and from the same ML annealed at 298 °C for 1 and 100 hours. The specimens were imaged using a JEM-4000EX TEM operating at 400 kV with a point-to-point resolution of better than 0.17 nm. The specimens were viewed along Si [110] projection of the substrate, with the (001) Si surface plane parallel to the beam direction.

Comparison of Ion-Milling Techniques For Cross-Sectional TEM of Semiconductors

1985 ◽  
Vol 43 ◽  
pp. 166-167
Author(s):  
Julia T. Luck ◽  
C. W. Boggs ◽  
S. J. Pennycook
Keyword(s):  
Analytical Techniques ◽  
Sample Surface ◽  
Ion Milling ◽  
Cross Sectional ◽  
Reliable Technique ◽  
Near Surface ◽  
Transmission Electron ◽  
Thin Region ◽  
Transient Thermal

The use of cross-sectional Transmission Electron Microscopy (TEM) has become invaluable for the characterization of the near-surface regions of semiconductors following ion-implantation and/or transient thermal processing. A fast and reliable technique is required which produces a large thin region while preserving the original sample surface. New analytical techniques, particularly the direct imaging of dopant distributions, also require good thickness uniformity. Two methods of ion milling are commonly used, and are compared below. The older method involves milling with a single gun from each side in turn, whereas a newer method uses two guns to mill from both sides simultaneously.

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