Heat Conduction in Nanostructured Materials Predicted by Phonon Bulk Mean Free Path Distribution

2015 ◽  
Vol 137 (7) ◽  
Author(s):  
Giuseppe Romano ◽  
Jeffrey C. Grossman

We develop a computational framework, based on the Boltzmann transport equation (BTE), with the ability to compute thermal transport in nanostructured materials of any geometry using, as the only input, the bulk cumulative thermal conductivity. The main advantage of our method is twofold. First, while the scattering times and dispersion curves are unknown for most materials, the phonon mean free path (MFP) distribution can be directly obtained by experiments. As a consequence, a wider range of materials can be simulated than with the frequency-dependent (FD) approach. Second, when the MFP distribution is available from theoretical models, our approach allows one to include easily the material dispersion in the calculations without discretizing the phonon frequencies for all polarizations thereby reducing considerably computational effort. Furthermore, after deriving the ballistic and diffusive limits of our model, we develop a multiscale method that couples phonon transport across different scales, enabling efficient simulations of materials with wide phonon MFP distributions length. After validating our model against the FD approach, we apply the method to porous silicon membranes and find good agreement with experiments on mesoscale pores. By enabling the investigation of thermal transport in unexplored nanostructured materials, our method has the potential to advance high-efficiency thermoelectric devices.

2012 ◽  
Vol 135 (1) ◽  
Author(s):  
James M. Loy ◽  
Jayathi Y. Murthy ◽  
Dhruv Singh

Nongray phonon transport solvers based on the Boltzmann transport equation (BTE) are being increasingly employed to simulate submicron thermal transport in semiconductors and dielectrics. Typical sequential solution schemes encounter numerical difficulties because of the large spread in scattering rates. For frequency bands with very low Knudsen numbers, strong coupling between other BTE bands result in slow convergence of sequential solution procedures. This is due to the explicit treatment of the scattering kernel. In this paper, we present a hybrid BTE-Fourier model which addresses this issue. By establishing a phonon group cutoff Knc, phonon bands with low Knudsen numbers are solved using a modified Fourier equation which includes a scattering term as well as corrections to account for boundary temperature slip. Phonon bands with high Knudsen numbers are solved using the BTE. A low-memory iterative solution procedure employing a block-coupled solution of the modified Fourier equations and a sequential solution of BTEs is developed. The hybrid solver is shown to produce solutions well within 1% of an all-BTE solver (using Knc = 0.1), but with far less computational effort. Speedup factors between 2 and 200 are obtained for a range of steady-state heat transfer problems. The hybrid solver enables efficient and accurate simulation of thermal transport in semiconductors and dielectrics across the range of length scales from submicron to the macroscale.


1999 ◽  
Author(s):  
Per G. Sverdrup ◽  
Y. Sungtaek Ju ◽  
Kenneth E. Goodson

Abstract The temperature rise in compact silicon devices is predicted at present by solving the heat diffusion equation based on Fourier’s law. The validity of this approach needs to be carefully examined for semiconductor devices in which the region of strongest electronphonon coupling is narrower than the phonon mean free path, Λ, and for devices in which Λ is comparable to or exceeds the dimensions of the device. Previous research estimated the effective phonon mean free path in silicon near room temperature to be near 300 nm, which is already comparable with the minimum feature size of current generation transistors. This work numerically integrates the phonon Boltzmann transport equation (BTE) within a two-dimensional Silicon-on-Insulator (SOI) transistor. The BTE is coupled with the classical heat diffusion equation, which is solved in the silicon dioxide layer beneath a transistor with a channel length of 400 nm. The sub-continuum simulations yield a peak temperature rise that is 159 percent larger than predictions using only the classical heat diffusion equation. This work will facilitate the development of simpler calculation strategies, which are appropriate for commercial device simulators.


2000 ◽  
Author(s):  
Taofang Zeng ◽  
Gang Chen

Abstract When electrons sweep through a double-heterojunction structure, there exist thermionic effects at the junctions and thermoelectric effects in the film. While both thermoelectric and thermionic effects have been studied for refrigeration and power generation applications separately, their interplay in heterostructures is not understood. This paper establishes a unified model including both thermionic and thermoelectric processes based on the Boltzmann transport equation for electrons, and the nonequilibrium interaction between electrons and phonons. Approximate solutions are obtained, leading to the electron temperature and Fermi level distributions inside heterostructures and discontinuities at the interfaces as a consequence of the highly nonequilibrium transport when the film thickness is much smaller than the electron mean free path. It is found that when the film thickness is smaller than the mean free path of electrons, the transport of electrons is controlled by thermionic emission. The coexistence of thermoelectric and thermionic effects may increase the power factor when the electron mean free path is comparable to the film thickness.


2009 ◽  
Vol 1229 ◽  
Author(s):  
Thomas W Brown ◽  
Edward Hensel

AbstractThermal transport in crystalline materials at various length scales can be modeled by the Boltzmann transport equation (BTE). A statistical phonon transport (SPT) model is presented that solves the BTE in a statistical framework that incorporates a unique state-based phonon transport methodology. Anisotropy of the first Brillouin zone (BZ) is captured by utilizing directionally-dependent dispersion curves obtained from lattice dynamics calculations. A rigorous implementation of phonon energy and pseudo-momentum conservation is implemented in the ballistic thermal transport regime for a homogeneous silicon nanowire with adiabatic specular boundary conditions.


2015 ◽  
Vol 112 (16) ◽  
pp. 4846-4851 ◽  
Author(s):  
Kathleen M. Hoogeboom-Pot ◽  
Jorge N. Hernandez-Charpak ◽  
Xiaokun Gu ◽  
Travis D. Frazer ◽  
Erik H. Anderson ◽  
...  

Understanding thermal transport from nanoscale heat sources is important for a fundamental description of energy flow in materials, as well as for many technological applications including thermal management in nanoelectronics and optoelectronics, thermoelectric devices, nanoenhanced photovoltaics, and nanoparticle-mediated thermal therapies. Thermal transport at the nanoscale is fundamentally different from that at the macroscale and is determined by the distribution of carrier mean free paths and energy dispersion in a material, the length scales of the heat sources, and the distance over which heat is transported. Past work has shown that Fourier’s law for heat conduction dramatically overpredicts the rate of heat dissipation from heat sources with dimensions smaller than the mean free path of the dominant heat-carrying phonons. In this work, we uncover a new regime of nanoscale thermal transport that dominates when the separation between nanoscale heat sources is small compared with the dominant phonon mean free paths. Surprisingly, the interaction of phonons originating from neighboring heat sources enables more efficient diffusive-like heat dissipation, even from nanoscale heat sources much smaller than the dominant phonon mean free paths. This finding suggests that thermal management in nanoscale systems including integrated circuits might not be as challenging as previously projected. Finally, we demonstrate a unique capability to extract differential conductivity as a function of phonon mean free path in materials, allowing the first (to our knowledge) experimental validation of predictions from the recently developed first-principles calculations.


2018 ◽  
Vol 140 (5) ◽  
Author(s):  
Jackson R. Harter ◽  
Laura de Sousa Oliveira ◽  
Agnieszka Truszkowska ◽  
Todd S. Palmer ◽  
P. Alex Greaney

We present a method for solving the Boltzmann transport equation (BTE) for phonons by modifying the neutron transport code Rattlesnake which provides a numerically efficient method for solving the BTE in its self-adjoint angular flux (SAAF) form. Using this approach, we have computed the reduction in thermal conductivity of uranium dioxide (UO2) due to the presence of a nanoscale xenon bubble across a range of temperatures. For these simulations, the values of group velocity and phonon mean free path in the UO2 were determined from a combination of experimental heat conduction data and first principles calculations. The same properties for the Xe under the high pressure conditions in the nanoscale bubble were computed using classical molecular dynamics (MD). We compare our approach to the other modern phonon transport calculations, and discuss the benefits of this multiscale approach for thermal conductivity in nuclear fuels under irradiation.


Author(s):  
Dadong Wang ◽  
Yanbao Ma

It is well known that Fourier law breaks down for the prediction of heat conduction in nano-scale, where the length scale is comparable to the mean free path of energy carriers. Over the past decade, Boltzmann transport equation (BTE) has been used to predict thermal transport in dielectrics and semiconductors at micro-scale and nano-scale. In this work, a new modified gray model is obtained from BTE. The implicit lattice Boltzmann method (LBM) is developed to simulate the thermal transport process. Based on the new model, we can derive Guyer-Krumhansl equation. Transient heat conduction through a thin nano-film and hotspot self-heating in sub-micron transistors are examined. The numerical results are compared with those provided by Fourier, Cattaneo, and Guyer-Krumhansl equation.


2003 ◽  
Vol 793 ◽  
Author(s):  
Ronggui Yang ◽  
Gang Chen

ABSTRACTA phonon Boltzmann transport model is established to study the lattice thermal conductivity of nanocomposites with nanowires embedded in a host semiconductor material. Special attention has been paid to cell-cell interaction using periodic boundary conditions. The simulation shows that the temperature profiles in nanocomposites are very different from those in conventional composites, due to ballistic phonon transport at nanoscale. The thermal conductivity of periodic 2-D nanocomposites is a strong function of the size of the embedded wires and the volumetric fraction of the constituent materials. At constant volumetric fraction the smaller the wire diameter, the smaller is the thermal conductivity of periodic two-dimensional nanocomposites. For fixed silicon wire dimension, the lower the atomic percentage of germanium, the lower the thermal conductivity of the nanocomposites. The results of this study can be used to direct the development of high efficiency thermoelectric materials.


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