Composite Multiwalled Carbon Nanotubes as Memory Devices and Logic Gates

Author(s):  
Richard K. F. Lee ◽  
James M. Hill

In this study, we propose a new nanocomputer component. We investigate the mechanics of a multiwalled carbon nanotube, comprising two symmetrically placed inner tubes and a moveable tube of radius intermediate to the larger and the two smaller tubes. The larger tube has the two fixed smaller tubes located at its ends, and the moveable tube is assumed to be controlled by an applied voltage difference. The tube radii are purposely chosen so that electrons can jump from one tube to another and a current can flow from the larger tube to the moveable one and finally to one of the smaller tubes. The interaction energy for the system is obtained assuming the Lennard-Jones potential together with the continuum approximation. As expected, the system has two symmetrically placed equal minimum energy locations (i.e., the total interaction energies take on minimum values) and by adopting different electrical circuits, the design gives rise to the possibility of using the device either as a memory device or as logic gates. By applying a voltage input to produce an external electrical field and another voltage input to provide a charge on the moving tube, the moving tube provides an output signal which we assume is registered on a meter that is capable of measuring either voltage or charge. We present the basic design rules for such devices and we establish their feasibility for practical realization.

2011 ◽  
Vol 700 ◽  
pp. 85-88 ◽  
Author(s):  
Richard K. F. Lee ◽  
James M. Hill

In this study, we investigate the internal mechanics for a two-state memory device,comprising a charged metallofullerene which is located inside a closed carbon nanotube.Assuming the Lennard-Jones interaction energy and the continuum approximation, the metallofullerenehas two symmetrically placed equal minimum energy positions. On one side theencapsulated metallofullerene represents the zero information state and by applying an externalelectrical field, the metallofullerene can be made to overcome the energy barrier of thenanotube, and pass from one end of the tube to the other, where the metallofullerene thenrepresents the one information state.


2019 ◽  
Vol 9 (11) ◽  
pp. 2301 ◽  
Author(s):  
Pakhapoom Sarapat ◽  
James Hill ◽  
Duangkamon Baowan

After the discovery of circular formations of single walled carbon nanotubes called fullerene crop circles, their structure has become one of the most researched amongst carbon nanostructures due to their particular interesting physical properties. Several experiments and simulations have been conducted to understand these intriguing objects, including their formation and their hidden characteristics. It is scientifically conceivable that these crop circles, nowadays referred to as carbon nanotori, can be formed by experimentally bending carbon nanotubes into ring shaped structures or by connecting several sections of carbon nanotubes. Toroidal carbon nanotubes are likely to have many applications, especially in electricity and magnetism. In this review, geometry, construction, modelling and possible applications are discussed and the existing known analytical expressions, as obtained from the Lennard-Jones potential and the continuum approximation, for their interaction energies with other nanostructures are summarised.


Author(s):  
Olumide O. Adisa ◽  
Barry J. Cox ◽  
James M. Hill

In this paper, we investigate methane encapsulation in five spherical fullerenes C60,C240,C540,C960, and C1500. We exploit the 6–12 Lennard-Jones potential function and the continuum approximation to model the surface binding energies between methane and spherical fullerenes of varying sizes. Our results show that for a methane molecule interacting inside a spherical fullerene, the binding energies are minimized at locations which become closer to the fullerene wall as the size of the fullerene increases. However, we find that the methane molecule would require an applied external force to overcome the repulsive energy barrier in order to be encapsulated into a C60 fullerene. The present modeling indicates that the optimal minimum energy for methane storage in any spherical fullerene occurs for a fullerene with radius ≃6.17 Å, with a corresponding potential energy of ≃0.22 eV which occurs for a fullerene bigger than a C60 but slightly smaller than a C240 as the ideal spherical fullerene for methane encapsulation. Overall, our results are in very good agreement with other theoretical studies and molecular dynamics simulations, and show that fullerenes might be good candidates for gas storage. However, the major advantage of the approach adopted here is the derivation of explicit analytical formulae from which numerical results for varying physical scenarios may be readily obtained.


Crystals ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 70
Author(s):  
Minkyung Kim ◽  
Eunpyo Park ◽  
In Soo Kim ◽  
Jongkil Park ◽  
Jaewook Kim ◽  
...  

A synaptic device that contains weight information between two neurons is one of the essential components in a neuromorphic system, which needs highly linear and symmetric characteristics of weight update. In this study, a charge trap flash (CTF) memory device with a multilayered high-κ barrier oxide structure on the MoS2 channel is proposed. The fabricated device was oxide-engineered on the barrier oxide layers to achieve improved synaptic functions. A comparison study between two fabricated devices with different barrier oxide materials (Al2O3 and SiO2) suggests that a high-κ barrier oxide structure improves the synaptic operations by demonstrating the increased on/off ratio and symmetry of synaptic weight updates due to a better coupling ratio. Lastly, the fabricated device has demonstrated reliable potentiation and depression behaviors and spike-timing-dependent plasticity (STDP) for use in a spiking neural network (SNN) neuromorphic system.


Author(s):  
С.Ш. Рехвиашвили ◽  
М.М. Бухурова

AbstractA theoretical model describing the stability of a carbon nano-onion in the presence of a bulk catalytic graphite phase is constructed based on the continuum approximation of interatomic interaction potential and mechanics of deformed systems. It is shown that a carbon nano-onion becomes unstable when its radius exceeds double value of the radius of a fullerene C_60 molecule.


2018 ◽  
Vol 6 (11) ◽  
pp. 2724-2732 ◽  
Author(s):  
Junko Aimi ◽  
Po-Hung Wang ◽  
Chien-Chung Shih ◽  
Chih-Feng Huang ◽  
Takashi Nakanishi ◽  
...  

A novel strategy to control the OFET memory device performance has been demonstrated using a metallophthalocyanine-cored star-shaped polystyrene as a charge storage material.


1979 ◽  
Vol 57 (5) ◽  
pp. 538-551 ◽  
Author(s):  
Peeter Kruus ◽  
Barbara E. Poppe

A model of solutions of alkali halides in DMSO is developed. Each ion is described by a radius, a charge, a polarizability, and an exponential repulsion parameter. Each molecule is described by a polarizability, charges, 6-12 energy parameters, and 6-12 distance parameters centered on each of the 10 atoms in the molecule. The model is applied to calculate (i) the vaporization energy of solvent molecules, (ii) single ion solvation energies and configurations of the solvating molecules, and (iii) the energy as a function of reaction coordinate for the formation of an ion pair. The energies and configurations are obtained by allowing the systems to relax to minimum energy configurations by allowing motion of the molecules. The results of (i) give a vaporization energy 60% of the experimental. The results of (ii) give solvation energies in reasonable agreement with the experimental, and configurations which are reasonable from the point of view of mobilities of ions. The results of (iii) show the presence of a distinct solvent separated ion pair which actually has an energy lower than the contact ion pair. Advantages and problems involved in using this approach to model solutions are discussed.


2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
W. J. Liu ◽  
L. Chen ◽  
P. Zhou ◽  
Q. Q. Sun ◽  
H. L. Lu ◽  
...  

We demonstrated a flash memory device with chemical-vapor-deposited graphene as a charge trapping layer. It was found that the average RMS roughness of block oxide on graphene storage layer can be significantly reduced from 5.9 nm to 0.5 nm by inserting a seed metal layer, which was verified by AFM measurements. The memory window is 5.6 V for a dual sweep of ±12 V at room temperature. Moreover, a reduced hysteresis at the low temperature was observed, indicative of water molecules or −OH groups between graphene and dielectric playing an important role in memory windows.


1984 ◽  
Vol 29 (4) ◽  
pp. 2017-2020 ◽  
Author(s):  
R. Ball ◽  
M. Nauenberg ◽  
T. A. Witten

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