In Situ Strengthening of the Aluminum-based Gadolinium Alloy Composite for Tribological Applications

2012 ◽  
Vol 134 (1) ◽  
Author(s):  
Brady Barkley ◽  
Carlos Sanchez ◽  
Hong Liang

In the present research, a new composite material was developed for increased strength and tribological performance. The gadolinium silicon-germanium compound, GSG, was synthesized into an aluminum substrate to form a composite (GSG-Al). Experimental investigation indicated that the phase transformation of the GSG at its Curie temperature induced significant changes in crystal structures resulting in a giant strain effect. Such an effect increased the wear resistance at a temperature range from −25 °C to 150 °C. The built-in and “self-strengthening” property of such a material is highly desirable for tribological applications. In this manuscript, details of material synthesis, characterization, mechanical, and tribological behavior will be discussed.

Friction ◽  
2021 ◽  
Author(s):  
Xiaogang Zhang ◽  
Yali Zhang ◽  
Zhongmin Jin

AbstractNumerous medical devices have been applied for the treatment or alleviation of various diseases. Tribological issues widely exist in those medical devices and play vital roles in determining their performance and service life. In this review, the bio-tribological issues involved in commonly used medical devices are identified, including artificial joints, fracture fixation devices, skin-related devices, dental restoration devices, cardiovascular devices, and surgical instruments. The current understanding of the bio-tribological behavior and mechanism involved in those devices is summarized. Recent advances in the improvement of tribological properties are examined. Challenges and future developments for the prospective of bio-tribological performance are highlighted.


2016 ◽  
Vol 149 ◽  
pp. 431-437 ◽  
Author(s):  
A. Ruggiero ◽  
R. D’Amato ◽  
M. Merola ◽  
P. Valášek ◽  
M. Müller

2011 ◽  
Vol 40 (5) ◽  
pp. 1190-1194
Author(s):  
Wenbin Su ◽  
Chunlei Wang ◽  
Hongchao Wang ◽  
Jian Liu ◽  
Peng Zheng ◽  
...  

2014 ◽  
Vol 81 ◽  
pp. 4-7 ◽  
Author(s):  
S. Wang ◽  
F.M. Guo ◽  
D.Q. Jiang ◽  
Y. Liu ◽  
L.S. Cui

2018 ◽  
Vol 350 ◽  
pp. 391-400 ◽  
Author(s):  
Xiang Qiu ◽  
Naeem ul Haq Tariq ◽  
Ji-qiang Wang ◽  
Jun-rong Tang ◽  
Lawrence Gyansah ◽  
...  

2002 ◽  
Vol 729 ◽  
Author(s):  
Roger T. Howe ◽  
Tsu-Jae King

AbstractThis paper describes recent research on LPCVD processes for the fabrication of high-quality micro-mechanical structures on foundry CMOS wafers. In order to avoid damaging CMOS electronics with either aluminum or copper metallization, the MEMS process temperatures should be limited to a maximum of 450°C. This constraint rules out the conventional polycrystalline silicon (poly-Si) as a candidate structural material for post-CMOS integrated MEMS. Polycrystalline silicon-germanium (poly-SiGe) alloys are attractive for modular integration of MEMS with electronics, because they can be deposited at much lower temperatures than poly-Si films, yet have excellent mechanical properties. In particular, in-situ doped p-type poly-SiGe films deposit rapidly at low temperatures and have adequate conductivity without post-deposition annealing. Poly-Ge can be etched very selectively to Si, SiGe, SiO2 and Si3N4 in a heated hydrogen peroxide solution, and can therefore be used as a sacrificial material to eliminate the need to protect the CMOS electronics during the MEMS-release etch. Low-resistance contact between a structural poly-SiGe layer and an underlying CMOS metal interconnect can be accomplished by deposition of the SiGe onto a typical barrier metal exposed in contact windows. We conclude with directions for further research to develop poly-SiGe technology for integrated inertial, optical, and RF MEMS applications.


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