Silicon Nanowire Conductance in the Ballistic Regime: Models and Simulations

2012 ◽  
Vol 134 (5) ◽  
Author(s):  
David Lacroix ◽  
Karl Joulain ◽  
Jerome Muller ◽  
Gilles Parent
Keyword(s):  
Elastic Wave ◽  
Heat Transport ◽  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Normal Modes ◽  
Thermal Conductance ◽  
Wave Theory ◽  
Ballistic Regime ◽  
Thin Wires ◽  
Transmission And Reflection

This study deals with phonon heat transport in silicon nanowires. A review of various methods that can be used to assess thermal conductance of such nanodevices is presented. Here, a specific attention is paid to the case of the Landauer Formalism, which can describe extremely thin wires conductance. In order to use this technique, the calculation of propagating modes in a silicon nanowire is necessary. Among the several existing models allowing such calculation, the elastic wave theory has been used to obtain the normal mode number. Besides, in this study, the transmission and reflection of phonon at the interface between two nanostructures are discussed. Using the diffuse mismatch model (DMM), the global transmissivity of the system made of a nanowire suspended between two thermal reservoirs is addressed. Then, the calculations of normal modes’ numbers and thermal conductances of several silicon nanowires, with various diameters set between bulk thermal reservoirs, are presented and compared to other models and available experiments.

Silicon Nanowire Conductance in the Ballistic Regime: Models and Simulation

2009 ◽  
Author(s):  
David Lacroix ◽  
Karl Joulain ◽  
Jerome Muller ◽  
Gilles Parent
Keyword(s):  
Elastic Wave ◽  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Normal Modes ◽  
Thermal Conductance ◽  
Wave Theory ◽  
Ballistic Regime ◽  
Thin Wires ◽  
20 Nm ◽  
Transmission And Reflection

This paper deals with phonon heat transport in silicon nanowires. A review of various techniques that can be used to assess thermal conductance of such nanodevices is presented and a peculiar attention is paid to the case of the Landauer Formalism that can describe extremely thin wires. Several models for normal modes of silicon nanowire determination are considered, among them elastic wave theory has been used to determine the normal mode number. Besides, transmission and reflection of phonon at the interface between two nanostructures is discussed. Calculations and comparisons of thermal conductance of a 20 nm silicon nanowire between bulk thermal reservoirs are thus discussed.

scholarly journals Using Amorphous CoB Alloy as Transducer to Detect Acoustic Propagation and Heat Transport at Interface

2021 ◽  
Vol 11 (11) ◽  
pp. 5155
Author(s):  
Liu Jian ◽  
Gyung-Min Choi
Keyword(s):  
Heat Transport ◽  
Sapphire Substrate ◽  
Intermediate Layer ◽  
Thermal Conductance ◽  
Acoustic Oscillation ◽  
Acoustic Propagation ◽  
Acoustic Oscillations ◽  
Interfacial Coupling ◽  
Soft Layer ◽  
Substrate Interface

Acoustic oscillation provides useful information regarding the interfacial coupling between metal transducer layers and substrate materials. The interfacial coupling can be significantly reduced by a mechanically soft layer between the transducer and substrate. However, preserving a thin, soft layer at the interface during fabrication is often challenging. In this study, we demonstrate that an amorphous CoB alloy on top of a sapphire substrate can substantially amplify acoustic oscillations. By analyzing the attenuation of acoustic oscillations, we show that a thin, soft layer with a thickness of >2 ± 1 Å exists at the interface. The intermediate layer at the interface is further verified by investigating heat transport. By analyzing the slow decrease of the temperature of the transducer layer, we determine a thermal conductance of 35 ± 5 MW m−2 K−1 at the transducer/substrate interface. This low value supports the existence of a thin, soft layer at the interface. Our results demonstrate that an amorphous metal with B alloying effectively preserves the soft nature at the interface and detects the acoustic propagation and heat transport across it.

Effect of Metal - Silicon Nanowire Contacts on the Performance of Accumulation Metal Oxide Semiconductor Field Effect Transistor

2008 ◽  
Vol 1144 ◽  
Author(s):  
Pranav Garg ◽  
Yi Hong ◽  
Md. Mash-Hud Iqbal ◽  
Stephen J. Fonash
Keyword(s):  
Metal Oxide ◽  
Silicon Nanowires ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Manufacturing Cost ◽  
Effect Transistor ◽  
The Impact

ABSTRACTRecently, we have experimentally demonstrated a very simply structured unipolar accumulation-type metal oxide semiconductor field effect transistor (AMOSFET) using grow-in-place silicon nanowires. The AMOSFET consists of a single doping type nanowire, metal source and drain contacts which are separated by a partially gated region. Despite its simple configuration, it is capable of high performance thereby offering the potential of a low manufacturing-cost transistor. Since the quality of the metal/semiconductor ohmic source and drain contacts impacts AMOSFET performance, we repot here on initial exploration of contact variations and of the impact of thermal process history. With process optimization, current on/off ratios of 106 and subthreshold swings of 70 mV/dec have been achieved with these simple devices

Modeling stress retarded self-limiting oxidation of suspended silicon nanowires for the development of silicon nanowire-based nanodevices

2011 ◽  
Vol 110 (3) ◽  
pp. 033524 ◽  
Author(s):  
Pier-Francesco Fazzini ◽  
Caroline Bonafos ◽  
Alain Claverie ◽  
Alexandre Hubert ◽  
Thomas Ernst ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Modeling Stress

Photoluminescence Properties of Silicon Nanowires and Carbon Nanotube-Silicon Nanowire Composite Arrays

2002 ◽  
Vol 19 (11) ◽  
pp. 1703-1706 ◽  
Author(s):  
Li Meng-Ke ◽  
Lu Mei ◽  
Kong Ling-Bin ◽  
Wang Cheng-Wei ◽  
Guo Xin-Yong ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Photoluminescence Properties

Synthesis of Silicon Nanowire Arrays by Metal-Assisted Chemical Etching in Aqueous NH4HF2 Solution

2012 ◽  
Vol 21 ◽  
pp. 109-115 ◽  
Author(s):  
S. Naama ◽  
T. Hadjersi ◽  
G. Nezzal ◽  
L. Guerbous
Keyword(s):  
Silicon Nanowires ◽  
Chemical Etching ◽  
Silicon Nanowire ◽  
Nanowire Arrays ◽  
Etching Time ◽  
Silicon Nanowire Arrays ◽  
Peak Intensity ◽  
One Step ◽  
Etching Parameters ◽  
P Type

One-step metal-assisted electroless chemical etching of p-type silicon substrate in NH4HF2/AgNO3 solution was investigated. The effect of different etching parameters including etching time, temperature, AgNO3 concentration and NH4HF2 concentration were investigated. The etched layers formed were investigated by scanning electron microscopy (SEM) and Photoluminescence. It was found that the etched layer was formed by well-aligned silicon nanowires. It is noted that their density and length strongly depend on etching parameters. Room temperature photoluminescence (PL) from etched layer was observed. It was observed that PL peak intensity increases significantly with AgNO3 concentration.

Ultrathin Silicon Nanowires Produced by a Bi-Metal-Assisted Chemical Etching Method for Highly Stable Lithium-Ion Battery Anodes

NANO ◽  
2020 ◽  
Vol 15 (06) ◽  
pp. 2050076
Author(s):  
Fang Sun ◽  
Zhiyuan Tan ◽  
Zhengguang Hu ◽  
Jun Chen ◽  
Jie Luo ◽  
...  
Keyword(s):  
Lithium Ion Batteries ◽  
Lithium Ion Battery ◽  
Silicon Nanowires ◽  
Chemical Etching ◽  
Silicon Nanowire ◽  
High Capacity ◽  
Lithium Ion ◽  
Average Diameter ◽  
Sei Layer ◽  
Metal Assisted Chemical Etching

Silicon is widely studied as a high-capacity lithium-ion battery anode. However, the pulverization of silicon caused by a large volume expansion during lithiation impedes it from being used as a next generation anode for lithium-ion batteries. To overcome this drawback, we synthesized ultrathin silicon nanowires. These nanowires are 1D silicon nanostructures fabricated by a new bi-metal-assisted chemical etching process. We compared the lithium-ion battery properties of silicon nanowires with different average diameters of 100[Formula: see text]nm, 30[Formula: see text]nm and 10[Formula: see text]nm and found that the 30[Formula: see text]nm ultrathin silicon nanowire anode has the most stable properties for use in lithium-ion batteries. The above anode demonstrates a discharge capacity of 1066.0[Formula: see text]mAh/g at a current density of 300[Formula: see text]mA/g when based on the mass of active materials; furthermore, the ultrathin silicon nanowire with average diameter of 30[Formula: see text]nm anode retains 87.5% of its capacity after the 50th cycle, which is the best among the three silicon nanowire anodes. The 30[Formula: see text]nm ultrathin silicon nanowire anode has a more proper average diameter and more efficient content of SiOx. The above prevents the 30[Formula: see text]nm ultrathin silicon nanowires from pulverization and broken during cycling, and helps the 30[Formula: see text]nm ultrathin silicon nanowires anode to have a stable SEI layer, which contributes to its high stability.

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