On the Mechanical Behavior of Boron Nitride Nanotubes

2010 ◽  
Vol 63 (2) ◽  
Author(s):  
H. M. Ghassemi ◽  
R. S. Yassar

Boron nitride (BN) nanotubes have structural and mechanical properties similar to carbon nanotubes and are known to be the strongest insulators. Great interest has been focused on understanding the mechanical properties of BN nanotubes as a function of their structural and physical properties. Yet, the published data have not been reviewed and systematically compared. In this paper, we critically review the mechanical properties of BN nanotubes from both experimental and simulation perspectives. The experimental reports include thermal vibrations, electric induced resonance method, and in situ force measurements inside transmission electron microscopy. The modeling and simulation efforts encompass tight bonding methods and molecular dynamics. Replacing the covalent sp2 bond (C–C) by ionic bond (B–N) results in differences in the mechanical properties of BN nanotubes in comparison to carbon nanotubes. The experimental and computational simulations indicate that BN nanotubes are highly flexible. High necking angles in BN nanotubes are assumed to be correlated with unfavorable bonding in B–B and N–N atoms.

2011 ◽  
Vol 694 ◽  
pp. 408-412
Author(s):  
Lai Ping Zhang ◽  
Ji Lin Wang ◽  
Guo Wei Zhao ◽  
Zhan Hui Zhang ◽  
Fang Zhang ◽  
...  

Four types of boron nitride (BN) nanotubes are selectively synthesized by annealing porous precursor in flowing NH3 and NH3/H2 atmosphere at temperature ranging from 1000 to 1200°C in a vertical furnace. The as-synthesized BN nanotubes, including cylinder, wave, bamboo and bubble-chain, are characterized by scanning and transmission electron microscopy. Selectivity of BN nanotubes is estimated as approximately 80 to 95%. The porous precursor B31Fe17(MgO)27 prepared by self-propagation high-temperature synthesis (SHS) method plays a key role in controllable synthesis of the as-grown BN nanotubes. The chemical reaction and annealing mechanism are also discussed.


ACS Nano ◽  
2011 ◽  
Vol 5 (9) ◽  
pp. 7362-7368 ◽  
Author(s):  
Dai-Ming Tang ◽  
Cui-Lan Ren ◽  
Xianlong Wei ◽  
Ming-Sheng Wang ◽  
Chang Liu ◽  
...  

2001 ◽  
Vol 706 ◽  
Author(s):  
Dmitri Golberg ◽  
Yoshio Bando ◽  
Laure Bourgeois ◽  
Renzhi Ma ◽  
Kazuhiko Ogawa ◽  
...  

AbstractBoron nitride nanotubes, nanocones and nanocables were prepared and their atomic structures were identified by using a 300 kV field emission transmission electron microscope equipped with an electron energy loss spectrometer and energy dispersion X-ray detector. Multiwalled BN nanotubes and nanocones were synthesized by reacting C nanotube templates and boron oxide under nitrogen atmosphere at 1723-2023 K. Additions of metal oxide promoters, e.g. MoO3, CuO, and PbO, significantly improved BN-rich nanotube yield at the expense of B-C-N nanotubes. It was shown that BN nanotubes had preferential “zigzag” chirality and exhibited either hexagonal or rhombohedral stacking between shells. An efficient synthetic route for bulk quantities of BN tube production was also developed, where a B-N-O precursor was used during a CVD process. Nanocones of BN were mostly found to have 240° disclinations which ensure the presence of B-N bonds only. One case was observed of a cone constituted of 300° disclination implying that structures may contain line defects of non B-N bonds. The first synthesis of insulating BN nanocables was carried out, where BN nanotubes were entirely filled with Invar Fe-Ni nanorods. The filled nanotube diameters ranged between 30 to 300 nm, whereas the length of filling reached several microns.


2009 ◽  
Vol 1204 ◽  
Author(s):  
Hessam Ghassemi ◽  
Chee Huei Lee ◽  
Yoke Khin Yap ◽  
Reza Shahbazian Yassar

AbstractUsing a novel in-situ scanning tunneling microcopy integrated into a 200Kv transmission electron microscopy, we have shown that boron nitride nanotubes (BNNTs) posses remarkable flexibility and convert from insulator to semi-conductor upon bending. To measure the electrical properties, the BNNT was bent between two gold contacts constructing a metal-semiconductor-metal circuit. The resistivity of the BNNT under bending condition was measured to be ∼460 MΩ from the experimentally recorded current-voltage data. Our finding suggests that mechanical straining can improve the electrical transport in BN nanotubes via reducing the band gap.


Nano Letters ◽  
2019 ◽  
Vol 19 (8) ◽  
pp. 4974-4980 ◽  
Author(s):  
Xin Zhou ◽  
Dai-Ming Tang ◽  
Masanori Mitome ◽  
Yoshio Bando ◽  
Takayoshi Sasaki ◽  
...  

2012 ◽  
Vol 18 (S2) ◽  
pp. 1580-1581
Author(s):  
A. Asthana ◽  
B. Hao ◽  
Y. Yap ◽  
R. Yassar

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.


2015 ◽  
Vol 2015 ◽  
pp. 1-5
Author(s):  
Yuanlie Yu ◽  
Hua Chen ◽  
Yun Liu

A facilein situfabrication of palladium nanoparticles decorated boron nitride nanotubes (Pd-BNNTs) is described. The decoration of BNNTs was carried out by the self-regulated reduction of palladium chloride (PdCl2) with the aid of sodium dodecyl sulfate (SDS). During the preparation process, the surfactant SDS plays a dual role: it aids the dispersibility of BNNTs and produces the reductant of CH3(CH2)10CH2OH. Then the CH3(CH2)10CH2OH can reduce Pd2+to form Pd nanoparticles on the surface of BNNSs. The as-prepared Pd-BNNTs were characterized by field emission scanning electron microscopy, transmission electron microscopy, X-ray energy dispersive spectroscopy, and Fourier transform infrared spectroscopy. The results show that the Pd nanocrystalline particles can be deposited onto the BNNTs surfaceviathis simple route. This approach constitutes a basis for the assembly and integration of nanoscale materials onto BNNTs and puts a light on the potential application of the BNNTs in electronic, catalysis, and hydrogen storage fields.


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