Effect of a Suction Upon Laminar Flow Along a Vertical Wall

1969 ◽  
Vol 36 (4) ◽  
pp. 877-878 ◽  
Author(s):  
M. A. A. Khan

The laminar flow of a thin film past a vertical wall subjected to suction is studied. An approximate solution for small porosity is obtained in the accelerated region. A relation between film thickness and distance traveled is presented.

1968 ◽  
Vol 35 (4) ◽  
pp. 631-633 ◽  
Author(s):  
R. Haugen

An analytical study is presented which describes the laminar accelerating flow of a thin film falling along a vertical wall. The approximate mathematical solution is given with emphasis on the growth and decrease of the boundary layer and film thickness, respectively. These resultant solutions are given in closed form and are found dependent upon two-dimensionless variables: φ2=3U0νgh02 and ζ2=1+2gh0x¯U02.


1982 ◽  
Vol 49 (1) ◽  
pp. 250-253 ◽  
Author(s):  
P. D. Verma ◽  
K. C. Sarangi ◽  
P. D. Ariel

The behavior of boundary layer thickness, film thickness is investigated for steady laminar flow along a porous vertical wall. Using a sixth-degree velocity profile the resulting equation from the Von Karman integral equation has been integrated numerically. The boundary layer thickness, film thickness are shown graphically for different values of suction parameter λ1 = v0h0/ν and a dimensionless parameter φ=3νu0gh021/2.


Carbon ◽  
2021 ◽  
Vol 178 ◽  
pp. 506-514
Author(s):  
Meiyu He ◽  
Jiayue Han ◽  
Xingwei Han ◽  
Jun Gou ◽  
Ming Yang ◽  
...  

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.


2020 ◽  
Vol 102 (21) ◽  
Author(s):  
Stephan Geprägs ◽  
Björn Erik Skovdal ◽  
Monika Scheufele ◽  
Matthias Opel ◽  
Didier Wermeille ◽  
...  

Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4056
Author(s):  
José Javier Imas ◽  
Carlos R. Zamarreño ◽  
Ignacio del Villar ◽  
Ignacio R. Matías

A fiber Bragg grating patterned on a SnO2 thin film deposited on the flat surface of a D-shaped polished optical fiber is studied in this work. The fabrication parameters of this structure were optimized to achieve a trade-off among reflected power, full width half maximum (FWHM), sensitivity to the surrounding refractive index (SRI), and figure of merit (FOM). In the first place, the influence of the thin film thickness, the cladding thickness between the core and the flat surface of the D-shaped fiber (neck), and the length of the D-shaped zone over the reflected power and the FWHM were assessed. Reflected peak powers in the range from −2 dB to −10 dB can be easily achieved with FWHM below 100 pm. In the second place, the sensitivity to the SRI, the FWHM, and the FOM were analyzed for variations of the SRI in the 1.33–1.4 range, the neck, and the thin-film thickness. The best sensitivities theoretically achieved for this device are next to 40 nm/RIU, while the best FOM has a value of 114 RIU−1.


2019 ◽  
Vol 682 ◽  
pp. 109-120 ◽  
Author(s):  
Wjatscheslaw Sakiew ◽  
Stefan Schrameyer ◽  
Marco Jupé ◽  
Philippe Schwerdtner ◽  
Nick Erhart ◽  
...  

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