Pole Tip Recession Measurements on Thin Film Heads Using Optical Profilometry With Phase Correction and Atomic Force Microscopy

1993 ◽  
Vol 115 (3) ◽  
pp. 382-386 ◽  
Author(s):  
Martin Smallen ◽  
Jerry J. K. Lee

Pole tip recession in magnetic recording thin film heads contributes to spacing loss, which leads to a degradation in the readback signal. As manufacturers improve the performance of magnetic recording devices, this recession will become more significant to the performance of future products. Pole tip recession can be measured by several techniques, including stylus profilometry, optical profilometry, and atomic force microscopy. Stylus profilometry is generally not used since it has several problems in this application. In this study, good correlation was found between optical profilometry and atomic force microscopy measurements, provided that the optical measurements were corrected for phase shift. This is necessary because of the dissimilar materials in the thin film head. There are several methods for making this correction. One method is an analytical correction using known optical constants for the head materials. These constants should be well characterized as the measurements are quite sensitive to them. Overcoating the head with a thin film provides two other methods for getting around the material differences problem. However, these methods require an optimum film thickness. The film must be thick enough so that it behaves as a substrate, but not so thick that it fails to replicate the head. PACS numbers: 85.70.Kh, 06.90. + v, 42.72. + h, 78.65.Pi

2008 ◽  
Vol 1138 ◽  
Author(s):  
Shibu Saha ◽  
S. K. Arya ◽  
S. P. Singh ◽  
B. D. Malhotra ◽  
K. Sreenivas ◽  
...  

AbstractPulsed laser deposited cerium oxide (CeO2) nanoporous thin film on platinum (Pt) coated glass has been used for immobilization of glucose oxidase (GOx) by electrostatic interaction. Atomic force microscopy studies reveal the formation of nanoporous surface morphology of CeO2 thin film. Differential pulse voltammetric and optical measurements show that the GOx/CeO2/Pt bioelectrode is sensitive to the detection of glucose over the concentration upto 300 mg/dl. A low value of enzyme's kinetic parameter (Michaelis-Menten constant∼1.01 mM) indicates enhanced enzyme affinity of GOx to glucose.


2011 ◽  
Vol 14 (8) ◽  
pp. H311 ◽  
Author(s):  
J. Y. Son ◽  
D.-Y. Kim ◽  
H. Kim ◽  
W. J. Maeng ◽  
Y.-S. Shin ◽  
...  

1999 ◽  
Vol 562 ◽  
Author(s):  
C. Liu ◽  
L. Shen ◽  
H. Jiang ◽  
D. Yang ◽  
G. Wu ◽  
...  

ABSTRACTThe Ni80Fe20/Fe50Mn50,thin film system exhibits exchange bias behavior. Here a systematic study of the effect of atomic-scale thin film roughness on coercivity and exchange bias is presented. Cu (t) / Ta (100 Å) / Ni80Fe20 (100 Å) / Fe50Mno50 (200 Å) / Ta (200 Å) with variable thickness, t, of the Cu underlayer were DC sputtered on Si (100) substrates. The Cu underlayer defines the initial roughness that is transferred to the film material since the film grows conformal to the initial morphology. Atomic Force Microscopy and X-ray diffraction were used to study the morphology and texture of the films. Morphological characterization is then correlated with magnetometer measurements. Atomic Force Microscopy shows that the root mean square value of the film roughness exhibits a maximum of 2.5 Å at t = 2.4 Å. X-ray diffraction spectra show the films are polycrystalline with fcc (111) texture and the Fe50Mn50 (111) peak intensity decreases monotonically with increasing Cu thickness, t. Without a Cu underlayer, the values of the coercivity and loop shift are, Hc = 12 Oe and Hp = 56 Oe, respectively. Both the coercivity and loop shift change with Cu underlayer thickness. The coercivity reaches a maximum value of Hc= 36 Oe at t = 4 Å. The loop shift exhibits an initial increase with t, reaches a maximum value of HP = 107 Oe at t = 2.4 Å, followed by a decrease with greater Cu thickness. These results show that a tiny increase in the film roughness has a huge effect on the exchange bias magnitude.


2009 ◽  
Vol 106 (4) ◽  
pp. 044314 ◽  
Author(s):  
Ampere A. Tseng ◽  
Jun-ichi Shirakashi ◽  
Shinya Nishimura ◽  
Kazuya Miyashita ◽  
Andrea Notargiacomo

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