Plate-Impact Technique for Measuring Dynamic Friction at High Temperatures

1997 ◽  
Vol 119 (3) ◽  
pp. 590-593 ◽  
Author(s):  
K. J. Frutschy ◽  
R. J. Clifton
Keyword(s):  
Shear Strength ◽  
High Temperature ◽  
High Temperatures ◽  
Dynamic Friction ◽  
Plate Impact ◽  
Strength Of Materials ◽  
Sliding Surfaces ◽  
Shear Plate ◽  
Impact Experiment

A new pressure-shear plate impact experiment is described for measuring the friction between two sliding surfaces at high temperature. Additionally, the techniques developed for this experiment extend the capability of the general pressure-shear experiment so that the shear strength of materials can be measured at high temperatures.

scholarly journals Emissivity change in pressure-shear plate impact experiment

2020 ◽  
Author(s):  
T. Jiao ◽  
P. Malhotra ◽  
R. J. Clifton
Keyword(s):  
Plate Impact ◽  
Shear Plate ◽  
Impact Experiment

Application of Bodner Viscoplastic Theory to Pressure-Shear Plate Impact Experiment

1990 ◽  
Vol 112 (1) ◽  
pp. 52-55 ◽  
Author(s):  
A. Gilat ◽  
J. Tsai
Keyword(s):  
Bauschinger Effect ◽  
Normal Component ◽  
Uniaxial Stress ◽  
Strain Rates ◽  
Stress Tests ◽  
Plate Impact ◽  
Calculated Profile ◽  
Shear Plate ◽  
Shear Component ◽  
Impact Experiment

An application of the unified elastic-viscoplastic constitutive theory of Bodner [5] is presented. The material parameters in the theory, which includes directional hardening, are determined from results of uniaxial stress tests at constant strain rates. The constitutive equations are then used in numerical modeling of pressure-shear plate impact experiment. The results show that the measured normal component of the wave agrees well with the calculated profile. A small discrepancy, which can be accounted for by the presence of a Bauschinger effect, exists between the theoretical and the experimental shear component of the wave profiles.

scholarly journals Pressure-shear plate impact experiment on soda-lime glass at a pressure of 30 GPa and strain rate of 4·107 s–1

2018 ◽  
Author(s):  
Christian Kettenbeil ◽  
Michael Mello ◽  
Tong Jiao ◽  
Rodney J. Clifton ◽  
Guruswami Ravichandran
Keyword(s):  
Strain Rate ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Plate Impact ◽  
Shear Plate ◽  
Impact Experiment

High Temperature n- and p-type Doped Microcrystalline Silicon Layers Grown by VHF PECVD Layer-by-Layer Deposition

2003 ◽  
Vol 762 ◽  
Author(s):  
A. Gordijn ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Activation Energy ◽  
High Temperature ◽  
High Temperatures ◽  
Continuous Wave ◽  
Hydrogen Plasma ◽  
Silicon Layer ◽  
Dark Conductivity ◽  
High Deposition Rate ◽  
Layer By Layer ◽  
Microcrystalline Silicon

AbstractDue to the high temperatures used for high deposition rate microcrystalline (μc-Si:H) and polycrystalline silicon, there is a need for compact and temperature-stable doped layers. In this study we report on films grown by the layer-by-layer method (LbL) using VHF PECVD. Growth of an amorphous silicon layer is alternated by a hydrogen plasma treatment. In LbL, the surface reactions are separated time-wise from the nucleation in the bulk. We observed that it is possible to incorporate dopant atoms in the layer, without disturbing the nucleation. Even at high substrate temperatures (up to 400°C) doped layers can be made microcrystalline. At these temperatures, in the continuous wave case, crystallinity is hindered, which is generally attributed to the out-diffusion of hydrogen from the surface and the presence of impurities (dopants).We observe that the parameter window for the treatment time for p-layers is smaller compared to n-layers. Moreover we observe that for high temperatures, the nucleation of p-layers is more adversely affected than for n-layers. Thin, doped layers have been structurally, optically and electrically characterized. The best n-layer made at 400°C, with a thickness of only 31 nm, had an activation energy of 0.056 eV and a dark conductivity of 2.7 S/cm, while the best p-layer made at 350°C, with a thickness of 29 nm, had an activation energy of 0.11 V and a dark conductivity of 0.1 S/cm. The suitability of these high temperature n-layers has been demonstrated in an n-i-p microcrystalline silicon solar cell with an unoptimized μc-Si:H i-layer deposited at 250°C and without buffer. The Voc of the cell is 0.48 V and the fill factor is 70 %.

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