In Situ Investigation of Nanoabrasive Wear of Silicon

2006 ◽  
Vol 129 (1) ◽  
pp. 11-16 ◽  
Author(s):  
S. Ingole ◽  
A. Schwartzman ◽  
H. Liang
Keyword(s):  
Abrasive Wear ◽  
Amorphous Silicon ◽  
Surface Characterization ◽  
Ex Situ ◽  
Normal Displacement ◽  
Length Scale ◽  
Crystal Silicon ◽  
In Situ Investigation ◽  
Nanometer Length Scale

Investigation of abrasive wear at the nanometer-length scale is presented on single crystalline (001) and amorphous silicon. Experiments were performed using nanoindentation and nanoscratch approaches. Surface characterization was carried out using an atomic force microscope. Results show that both materials behave quite differently from each other during indentation and scratch. Specifically, amorphous silicon is proven to be more unstable during scratching than single crystal silicon. The comparison of in situ and ex situ normal displacement was made. Evidence was found on the hysteretic and viscoplastic behavior of amorphous silicon in nanoscratch that is also seen in indentation. Furthermore, it is found that this material is unstable under stress within small scales. Indications of phase transformation, (reverse) densification, and transition of elastic-plastic deformation are seen. These observations, enabled on silicon using an in situ and nanometer length scale process, are fundamentally different from the understanding of conventional abrasive wear.

Sliding Induced Nanocrystals on Si

2005 ◽  
Author(s):  
Srinivas Guruzu ◽  
Hong Liang
Keyword(s):  
Atomic Force Microscope ◽  
Surface Characterization ◽  
Applied Load ◽  
Length Scale ◽  
Sliding Surface ◽  
Si Substrate ◽  
Atomic Force ◽  
Test Conditions ◽  
Boundary Properties ◽  
Nanometer Length Scale

Our previous research has shown that Ga pin sliding again Si induces nanometer length scale crystals. In this research, we continued on with an In pin with one stroke slides on Si substrate. Applied load was varied for sliding Surface characterization was conducted using an atomic force microscope. Results showed that triangular-shaped nanocrystals were formed on Si surfaces. The height and side length of these nanocrystals depend on test conditions. In this paper, we report our findings in crystal structures and boundary properties.

In-situ and ex-situ synchrotron X-ray diffraction studies of microstructural length scale controlled dealloying

2019 ◽  
Vol 168 ◽  
pp. 376-392 ◽  
Author(s):  
T. Song ◽  
M. Yan ◽  
N.A.S. Webster ◽  
M.J. Styles ◽  
J.A. Kimpton ◽  
...  
Keyword(s):  
Ex Situ ◽  
Length Scale ◽  
X Ray Diffraction ◽  
X Ray

In Situ Conductivity, Impedance Spectroscopy, and Ex Situ Raman Spectra of Amorphous Silicon during the Insertion/Extraction of Lithium

2007 ◽  
Vol 111 (30) ◽  
pp. 11437-11444 ◽  
Author(s):  
Elad Pollak ◽  
Gregory Salitra ◽  
Valentina Baranchugov ◽  
Doron Aurbach
Keyword(s):  
Impedance Spectroscopy ◽  
Amorphous Silicon ◽  
Raman Spectra ◽  
Ex Situ

Effects of ultrasound on colloidal organization at nanometer length scale during cross-flow ultrafiltration probed by in-situ SAXS

2014 ◽  
Vol 453 ◽  
pp. 624-635 ◽  
Author(s):  
Yao Jin ◽  
Nicolas Hengl ◽  
Stéphane Baup ◽  
Frédéric Pignon ◽  
Nicolas Gondrexon ◽  
...  
Keyword(s):  
Cross Flow ◽  
Length Scale ◽  
Nanometer Length Scale

In Situ Investigation of the a-Si:H/C-Si Interface

1996 ◽  
Vol 420 ◽  
Author(s):  
H. Feist ◽  
C. Swiatkowski ◽  
J. R. Elmiger ◽  
M. Zipfel ◽  
M. Kunst
Keyword(s):  
Crystalline Silicon ◽  
Microwave Frequency ◽  
Ex Situ ◽  
Silicon Substrates ◽  
Si Substrates ◽  
In Situ Investigation ◽  
Drastic Increase ◽  
Interface Recombination Velocity ◽  
Recombination Velocity

AbstractThe deposition of a-Si:H films on crystalline silicon substrates was monitored in situ by transient photoconductivity measurements in the microwave frequency range. At the start of the deposition a drastic increase of the interface recombination velocity was observed, followed by a rapid decrease. The implications of these results for the structure of the interface are discussed. Changes of the interface after deposition were detected without a change of the temperature, even at 250'C: The long relaxation time of the structure of the interface will be discussed. Ex situ results on the samples produced will be compared to the in situ results in view of the passivation properties of a-Si:H films on c-Si substrates.

In-Situ Investigation of Cu-In-Se Reactions by Thin Film Calorimetry

1997 ◽  
Vol 485 ◽  
Author(s):  
D. Wolf ◽  
G. Müller
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Equilibrium Phase ◽  
Reaction Times ◽  
Practical Interest ◽  
Ex Situ ◽  
In Situ Observation ◽  
Flux Agent ◽  
In Situ Investigation

AbstractStudies of the reaction path during annealing of Cu-In-Se thin films for solar cell absorbers have been limited up to now to ex-situ analyses of the phase composition by X-Ray Diffraction (XRD) after processing by a specific temperature-time program. As an indirect method, the application of ex-situ XRD is not sufficient for the determination of reaction temperatures and reaction times for setting up a general model of CIS-formation.We show in this paper that the use of a calorimetric method (Thin Film Calorimetry, TFC) offers the advantage of a direct (in-situ) observation of thin film reactions. Special care is taken to use film thicknesses of practical interest for industrial application (1.5 – 3 μm). In a first step we show results of binary reactions in the Cu-In, In-Se and Cu-Se systems. Their knowledge is necessary for understanding the processes involved in the ternary CIS-layers. It turned out that thin Cu-In and Cu-Se films react already at room temperature and behave as predicted by the bulk equilibrium phase diagrams during heating. In-Se thin films show prominent exothermic reactions starting with the melting of In. The first phase to be formed is generally In2Se which is then converted to more Se-rich compounds. In ternary Cu-In-Se films (Cu/In = 1.00) we observe transitions of the Cu-Se-system which can be attributed to the decomposition of CuSe2 and CuSe. Consequences for the model of improved CIS-growth by a Cu-Se flux agent are discussed.

Dependence of Crystallographic Texture of C54 Tisi2 on Thickness and Linewidth In Submicron Cmos Structures

1996 ◽  
Vol 427 ◽  
Author(s):  
V. Svilan ◽  
K. P. Rodbell ◽  
L. A. Clevenger ◽  
C. Cabral ◽  
R. A. Roy ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
The One ◽  
Oriented Parallel ◽  
Preferential Crystal Orientation ◽  
Line Direction

AbstractPreferential crystal orientation of low-resistance C54 TiSi2 formed in the reaction of polycrystalline and single crystal silicon with titanium was investigated for Ti thicknesses ranging from 15 to 44 nm. Using in situ synchrotron x-ray diffraction during heating of 15 nm of Ti on single crystal Si, we observed that the C54 TiSi2 silicide film showed predominantly <040> grains oriented normal to the sample. In thicker silicide films the <311> orientation dominated or film was randomly oriented. An ex situ four circle diffractometer was used to investigate the strong <040> texture in narrow line arrays of C54-TiSi2 formed on polycrystalline silicon with linewidths from 0.2 to 1.1 μm. We observed that the angular distribution of <040> Ti Si2 grains is dependent on the line direction, where the majority of grains had their (100) planes oriented parallel with the line direction. These findings support a model of the C49 to C54 TiSi2 transformation involving rapid growth of certain orientations favored by the one-dimensional geometry imposed by narrow lines.

Ultrathin sputtered silver films protected by ALD alumina: Comparison of in-situ investigation with ex-situ resistance and ellipsometric measurements

Vacuum ◽  
2021 ◽  
pp. 110669
Author(s):  
Alexandr Belosludtsev ◽  
Anna Sytchkova ◽  
Naglis Kyžas ◽  
Ignas Bitinaitis ◽  
Rimantas Simniškis ◽  
...  
Keyword(s):  
Ex Situ ◽  
Silver Films ◽  
In Situ Investigation
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