A Material Removal Rate Model Considering Interfacial Micro-Contact Wear Behavior for Chemical Mechanical Polishing

2005 ◽  
Vol 127 (1) ◽  
pp. 190-197 ◽  
Author(s):  
Yeau-Ren Jeng ◽  
Pay-Yau Huang
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Surface Hardness ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Rate Model ◽  
Abrasive Particles ◽  
Material Removal Rate Model

Chemical Mechanical Polishing (CMP) is a highly effective technique for planarizing wafer surfaces. Consequently, considerable research has been conducted into its associated material removal mechanisms. The present study proposes a CMP material removal rate model based upon a micro-contact model which considers the effects of the abrasive particles located between the polishing interfaces, thereby the down force applied on the wafer is carried both by the deformation of the polishing pad asperities and by the penetration of the abrasive particles. It is shown that the current theoretical results are in good agreement with the experimental data published previously. In addition to such operational parameters as the applied down force, the present study also considers consumable parameters rarely investigated by previous models based on the Preston equation, including wafer surface hardness, slurry particle size, and slurry concentration. This study also provides physical insights into the interfacial phenomena not discussed by previous models, which ignored the effects of abrasive particles between the polishing interfaces during force balancing.

A Material Removal Rate Model Considering Interfacial Micro-Contact Wear Behavior for Chemical Mechanical Polishing

2005 ◽  
Author(s):  
Yeau-Ren Jeng ◽  
Pay-Yau Huang
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Surface Hardness ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Rate Model ◽  
Abrasive Particles ◽  
Material Removal Rate Model

Chemical Mechanical Polishing (CMP) is a highly effective technique for planarizing wafer surfaces. Consequently, considerable research has been conducted into its associated material removal mechanisms. The present study proposes a CMP material removal rate model based upon a micro-contact model which considers the effects of the abrasive particles located between the polishing interfaces, thereby the down force applied on the wafer is carried both by the deformation of the polishing pad asperities and by the penetration of the abrasive particles. It is shown that the current theoretical results are in good agreement with the experimental data published previously. In addition to such operational parameters as the applied down force, the present study also considers consumable parameters rarely investigated by previous models based on the Preston equation, including wafer surface hardness, slurry particle size, and slurry concentration. This study also provides physical insights into the interfacial phenomena not discussed by previous models, which ignored the effects of abrasive particles between the polishing interfaces during force balancing.

On the Effects of Surface Forces on the Contact of a Wafer and Abrasive Particles in CMP

2008 ◽  
Author(s):  
Dinc¸er Bozkaya ◽  
Sinan Mu¨ftu¨
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Low Pressure ◽  
Surface Forces ◽  
Mechanical Polishing ◽  
Abrasive Particles ◽  
Low K

Chemical mechanical polishing (CMP) of ultra-low-k (ULK) dielectic materials is challenging, as they are susceptible to fracture under typical CMP pressures [1]. Low-pressure (lp) CMP is one of the solutions for polishing ULK dielectrics [1]. In order to implement lp-CMP the process should be optimized to maximize the material removal rate (MRR).

Two-Phase Hydrodynamic Modeling of Particulate Fluids in Sliding Contacts

2005 ◽  
Author(s):  
Elon Terrell ◽  
Jonathan Garcia ◽  
C. Fred Higgs
Keyword(s):  
Simple Model ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Wafer Surface ◽  
Surface Wear ◽  
Two Phase ◽  
Abrasive Particles ◽  
Preliminary Step

Chemical mechanical polishing (CMP) is a manufacturing process that uses controlled wear to planarize dielectric and metallic layers on silicon wafers. The wafer is polished by pressing it against a rotating pad that is flooded with slurry. The slurry itself is a fluid containing abrasive particles. Material removal rate (MRR) results have shown that the distribution of suspended particles in the slurry is significantly related to the wafer surface wear distribution during CMP. In this study, a simple model has been developed and solved as a preliminary step in analyzing the migration of the particles.

Effect of Abrasive and Surfactant on Chemical Mechanical Polishing of Hard Disk Substrates

2011 ◽  
Vol 314-316 ◽  
pp. 133-136
Author(s):  
Sheng Li Wang ◽  
Zhen Xia Li ◽  
Li Bing Yang ◽  
Li Bin Liu ◽  
Yu Tian
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
High Surface ◽  
Hard Disk ◽  
Mechanical Polishing ◽  
Surfactant Adsorption ◽  
Abrasive Particles ◽  
High Surface Quality

Chemical mechanical polishing (CMP) has been a widely applied process for hard disk substrates with nickel–phosphorous (Ni–P) plated. In this paper, the effects of abrasive and surfactant on the polishing performance of hard disk substrates using prepared colloidal silica-based alkaline slurry were investigated. The experimental results indicate that the material removal rate (MRR) strongly depends on the abrasive concentration and nonionic surfactant have little influence on the material removal rate. Under the testing conditions, smaller SiO2, moderate SiO2 concentration and higher surfactant concentration can obtain high surface quality in the prepared slurry. These results have been explained by which the abrasive particles move through the cover layer caused by surfactant adsorption on the disk substrates surface being polished.

Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)

2008 ◽  
Vol 600-603 ◽  
pp. 831-834 ◽  
Author(s):  
Joon Ho An ◽  
Gi Sub Lee ◽  
Won Jae Lee ◽  
Byoung Chul Shin ◽  
Jung Doo Seo ◽  
...  
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Diamond Particles ◽  
Average Grain Size ◽  
Silica Slurry ◽  
Sic Wafer

2inch 6H-SiC (0001) wafers were sliced from the ingot grown by a conventional physical vapor transport (PVT) method using an abrasive multi-wire saw. While sliced SiC wafers lapped by a slurry with 1~9㎛ diamond particles had a mean height (Ra) value of 40nm, wafers after the final mechanical polishing using the slurry of 0.1㎛ diamond particles exhibited Ra of 4Å. In this study, we focused on investigation into the effect of the slurry type of chemical mechanical polishing (CMP) on the material removal rate of SiC materials and the change in surface roughness by adding abrasives and oxidizer to conventional KOH-based colloidal silica slurry. The nano-sized diamond slurry (average grain size of 25nm) added in KOH-based colloidal silica slurry resulted in a material removal rate (MRR) of 0.07mg/hr and the Ra of 1.811Å. The addition of oxidizer (NaOCl) in the nano-size diamond and KOH based colloidal silica slurry was proven to improve the CMP characteristics for SiC wafer, having a MRR of 0.3mg/hr and Ra of 1.087Å.

Material Removal Model and Experimental Verification for Abrasive Jet Precision Finishing with Wheel as Restraint

2006 ◽  
Vol 304-305 ◽  
pp. 555-559 ◽  
Author(s):  
Chang He Li ◽  
Guang Qi Cai ◽  
Shi Chao Xiu ◽  
Q. Li
Keyword(s):  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Experimental Results ◽  
Grinding Wheel ◽  
Rate Model ◽  
Material Removal Model ◽  
Material Removal Rate Model ◽  
Three Body ◽  
Precision Finishing

The material removal rate (MRR) model was investigated in abrasive jet precision finishing (AJPF) with wheel as restraint. When abrasive wore and workpiece surface micro-protrusion removed, the size ratio for characteristic particle size to minimum film thickness gradually diminishing, the abrasive machining from two-body lapping to three-body polishing transition in AJPF with grinding wheel as restraint. In the study, the material removal rate model was established according to machining mechanisms and machining modes from two-body to three-body process transition condition, and active number of particles in grinding zone were calculated and simulated. Experiments were performed in the plane grinder for material removal mechanism and academic models verification. It can be observed from experimental results that the surface morphology change dramatically to a grooved or micro-machined surface with all the grooves aligned in the sliding direction in two-body lapping mode. On the other hand, the surface is very different, consists of a random machining pits with very little sign of any directionality to the deformation in the three-body machining mode. Furthermore, the material removal rate model was found to give a good description of the experimental results.

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