Effect of Nonlinear Elastic Behavior on Bilayer Decohesion of Thin Metal Films From Nonmetal Substrates

2002 ◽  
Vol 69 (4) ◽  
pp. 407-414 ◽  
Author(s):  
S. P. Baker ◽  
X. Wang ◽  
C.-Y. Hui

Nonlinear unloading behavior has been observed in thin metal films on substrates. In the present work, the effects of this nonlinear unloading behavior on the strain energy release rate in bilayer decohesion experiments, in which a highly stressed overlayer (“driver”) is used to decohere a layer (“target”) from a substrate, is modeled. Cases where either the driver or the target layer are nonlinear are considered. For particular combinations of stiffnesses and thicknesses, the difference between linear and nonlinear unloading behavior can be quite large (several hundred percent) at experimentally observed stress levels. For practical cases of CR/CU and CU/glass driver/target layer combinations, the maximum difference is about 25%.

Author(s):  
John Smart ◽  
Siu L. Fok

For determining the failure probability of ceramic components in a varying stress field, there are many theories which are based on the Weibull “weakest-link” ideas. However, the difference between the predictions for many stress systems is small and because of the scatter in the failure loads for ceramic materials and the inevitable experimental errors, it has been difficult to decide which is most suitable. In this paper, a testing regime is described which spreads the predictions from the various theories to allow the most suitable theory for a given material to be chosen. This will give more confidence when designing with ceramics. Tests are also described on a reactor grade graphite and it is shown that of the theories examined the maximum non-coplanar strain energy release rate is the most suitable criterion although the results indicate that current ‘weakest-link’ ideas may not be suitable to describe all loading situations. Reasons for this are discussed.


Author(s):  
L. M. Gignac ◽  
K. P. Rodbell

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.


2021 ◽  
Vol 494 ◽  
pp. 229344
Author(s):  
Roelof J. Kriek ◽  
Liesel A. van Heerden ◽  
Anzel Falch ◽  
Malcolm I. Gillespie ◽  
Alaa Y. Faid ◽  
...  

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