CHARACTERIZATION OF ZNO/TIO2 BILAYER FILM FOR EXTENDED GATE FIELD-EFFECT TRANSISTOR (EGFET) BASED PH SENSOR

2016 ◽  
Vol 78 (5-8) ◽  
Author(s):  
Rohanieza Abdul Rahman ◽  
Muhammad AlHadi Zulkefle ◽  
Khairul Aimi Yusof ◽  
Wan Fazlida Hanim Abdullah ◽  
Mohamad Rusop Mahmood ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Sol Gel ◽  
Ph Sensor ◽  
Deposition Process ◽  
Bilayer Film ◽  
Buffer Solution ◽  
Effect Transistor ◽  
Ph Buffer

An extended gate field-effect transistor (EGFET) of ZnO/TiO2 bilayer film as pH sensor was demonstrated in this paper. The sol-gel zinc oxide (ZnO) and titanium dioxide (TiO2) were prepared and spin coated onto indium tin oxide (ITO) coated glass substrate. After deposition process, this bilayer film then was annealed from 200⁰C up to 700⁰C. EGFET measurement employed to obtain the sensitivity of the bilayer thin film towards pH buffer solution, which is pH4, pH7 and pH10. According to the measurement process, we obtained that bilayer film annealed at 400⁰C produced highest sensitivity among other bilayer film, which is 66.8 mV/pH.    

scholarly journals Rancang bangun sensor PH menggunakan gold – extended gate field effect transistor

JURNAL ELTEK ◽  
2020 ◽  
Vol 18 (1) ◽  
pp. 78
Author(s):  
Leonardo Kamajaya ◽  
Fitri Fitri ◽  
Herman Hariyadi
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Sensor ◽  
Membrane Sensor ◽  
Sensor Membrane ◽  
Technological Developments ◽  
Effect Transistor ◽  
Ph Buffer ◽  
Detection Medium ◽  
Initial Research

ABSTRAK Banyak peneliti telah mengembangkan berbagai jenis biosensor, salah satunya sensor pH memanfaatkan MOSFET. Penelitian awal digunakan ISFET sebagai pendeteksi derajat keasamaan, seiring perkembangan teknologi digunakan EGFET sebagai media pendeteksi pH. Karena kelebihan dari EGFET yang lebih stabil dan tahan terhadap gangguan dari luar. Penelitian ini bertujuan untuk mengetahui performansi dari sensor pH berbasis Gold-EGFET dengan tingkat ketebalan lapisan membrane sensor yang berbeda pada pengukuran menggunakan pH buffer yang berbeda. Penelitian ini akan menguji tingkat sensitivitas dan linearitas dari pengukuran pH dengan ketebalan lapisan deteksi dari membrane sensor. ABSTRACT Many researchers have developed various types of biosensors, one of which is a pH sensor utilizing MOSFET. Initial research used ISFET as a detector of the degree of acidity, along with technological developments used EGFET as a pH detection medium because the advantages of EGFET are more stable and resistant to outside interference. This study aims to determine the performance of a Gold-EGFET-based pH sensor with a different level of membrane sensor thickness on measurements using different pH buffers. This study will test the sensitivity and linearity of the pH measurement with the thickness of the detection layer of the sensor membrane.

scholarly journals Palladium-oxide Extended Gate Field Effect Transistor as pH Sensor

2021 ◽  
pp. 100102
Author(s):  
Prashant Sharma ◽  
Rini Singh ◽  
Rishi Sharma ◽  
Ravindra Mukhiya ◽  
Kamlendra Awasthi ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Sensor ◽  
Palladium Oxide ◽  
Effect Transistor

Design and Simulation of Electrochemical Equivalent Circuit for Extended-gate FET pH Sensor Based on Experimental Value Using LTSPICE XVII

2021 ◽  
Author(s):  
Shaiful Bakhtiar Hashim ◽  
Zurita Zulkifli ◽  
Sukreen Hana Herman
Keyword(s):  
Equivalent Circuit ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Sensor ◽  
Spice Simulation ◽  
Discrete Component ◽  
Ph Values ◽  
Spice Model ◽  
Effect Transistor ◽  
Output Characteristics

Abstract A SPICE model for extended-gate field-effect transistor (EGFET) based pH sensor was developed using standard discrete components. Capacitors and resistors were used to represent the sensing and reference electrodes in the EGFET sensor system and the values of the discrete component were varied to see the output of the transistor. These variations were done to emulate the EGFET sensor output in different pH values. It was found that the experimental transfer and output characteristics of the EGFET were very similar to those from the SPICE simulation. Other than that, the changes of value components in the equivalent circuit did not affect the transfer and output characteristics graph, but the capacitor value produced significant output variation in the simulation. This can be related to the modification on the equivalent circuit was done with additional voltage, VSB (source to bulk) to produce the different VT values at different pH.

scholarly journals Two-Channel Graphene pH Sensor Using Semi-Ionic Fluorinated Graphene Reference Electrode

Sensors ◽  
2020 ◽  
Vol 20 (15) ◽  
pp. 4184
Author(s):  
Dae Hoon Kim ◽  
Woo Hwan Park ◽  
Hong Gi Oh ◽  
Dong Cheol Jeon ◽  
Joon Mook Lim ◽  
...  
Keyword(s):  
Electrolyte Solution ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Value ◽  
Characteristic Curve ◽  
Reference Electrode ◽  
Reference Channel ◽  
Buffer Solution ◽  
Positive Direction ◽  
Effect Transistor

A reference electrode is necessary for the working of ion-sensitive field-effect transistor (ISFET)-type sensors in electrolyte solutions. The Ag/AgCl electrode is normally used as a reference electrode. However, the Ag/AgCl reference electrode limits the advantages of the ISFET sensor. In this work, we fabricated a two-channel graphene solution gate field-effect transistor (G-SGFET) to detect pH without an Ag/AgCl reference electrode in the electrolyte solution. One channel is the sensing channel for detecting the pH and the other channel is the reference channel that serves as the reference electrode. The sensing channel was oxygenated, and the reference channel was fluorinated partially. Both the channels were directly exposed to the electrolyte solution without sensing membranes or passivation layers. The transfer characteristics of the two-channel G-SGFET showed ambipolar field-effect transistor (FET) behavior (p-channel and n-channel), which is a typical characteristic curve for the graphene ISFET, and the value of VDirac was shifted by 18.2 mV/pH in the positive direction over the range of pH values from 4 to 10. The leakage current of the reference channel was 16.48 nA. We detected the real-time pH value for the two-channel G-SGFET, which operated stably for 60 min in the buffer solution.

scholarly journals Graphene Channel Liquid Container Field Effect Transistor as pH Sensor

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Xin Li ◽  
Junjie Shi ◽  
Junchao Pang ◽  
Weihua Liu ◽  
Hongzhong Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Value ◽  
Ph Sensor ◽  
Drain Current ◽  
Fast Response ◽  
Monolayer Graphene ◽  
Ph Sensing ◽  
Order Of Magnitude ◽  
Effect Transistor

Graphene channel liquid container field effect transistor pH sensor with interdigital microtrench for liquid ion testing is presented. Growth morphology and pH sensing property of continuous few-layer graphene (FLG) and quasi-continuous monolayer graphene (MG) channels are compared. The experiment results show that the source-to-drain current of the graphene channel FET has a significant and fast response after adsorption of the measured molecule and ion at the room temperature; at the same time, the FLG response time is less than 4 s. The resolution of MG (0.01) on pH value is one order of magnitude higher than that of FLG (0.1). The reason is that with fewer defects, the MG is more likely to adsorb measured molecule and ion, and the molecules and ions can make the transport property change. The output sensitivities of MG are from 34.5% to 57.4% when the pH value is between 7 and 8, while sensitivity of FLG is 4.75% when thepH=7. The sensor fabrication combines traditional silicon technique and flexible electronic technology and provides an easy way to develop graphene-based electrolyte gas sensor or even biological sensors.

RF-Sputtered, Nanostructured ZnO-Based Extended-Gate Field-Effect Transistor as pH Sensor

2015 ◽  
Vol 13 (1) ◽  
pp. 26-31 ◽  
Author(s):  
R. Mukhiya ◽  
R. Sharma ◽  
V. K. Khanna ◽  
A. Adami ◽  
L. Lorenzelli ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Sensor ◽  
Effect Transistor
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