TAGUCHI MODELING OF PROCESS PARAMETERS IN VDG-MOSFET DEVICE FOR HIGHER ION/IOFF RATIO

2015 ◽  
Vol 77 (21) ◽  
Author(s):  
Khairil Ezwan Kaharudin ◽  
Fauziyah Salehuddin ◽  
Abdul Hamid Hamidon ◽  
Muhammad Nazirul Ifwat Abd Aziz ◽  
Ibrahim Ahmad
Keyword(s):  
Taguchi Method ◽  
Silicon Dioxide ◽  
Process Parameters ◽  
Device Fabrication ◽  
Electrical Performance ◽  
Optimization Approach ◽  
Double Gate ◽  
Drive Current ◽  
Virtual Device ◽  
Fabrication And Characterization

The miniaturization in the size of planar MOSFET device seems to be limited when it reaches to 22nm technology node. In this paper, the vertical double gate architecture of MOSFET device with ultrathin Si- pillar was introduced by keeping both silicon dioxide (SiO2) and polysilicon as the main materials. The proposed MOSFET architecture was known as Ultrathin Pillar Vertical Double Gate (VDG) MOSFET device and it was integrated with polysilicon-on-insulator (PSOI) technology for a superior electrical performance. The virtual device fabrication and characterization were done by using ATHENA and ATLAS modules of SILVACO Internationals. The process parameters of the device were then optimized by utilizing L27 orthogonal array of Taguchi method in order to obtain the highest value of drive current (ION) and the lowest value of leakage current (IOFF). The highest value of ION/IOFF ratio after an optimization approach was observed to be 2.154x 1012.

Parameter Optimization of AA6061-AA7075 Dissimilar Friction Stir Welding Using the Taguchi Method

2014 ◽  
Vol 695 ◽  
pp. 20-23
Author(s):  
L.H. Shah ◽  
N.F. Zainal Ariffin ◽  
Akhtar Razul Razali
Keyword(s):  
Friction Stir Welding ◽  
Taguchi Method ◽  
Process Parameters ◽  
Tilt Angle ◽  
Rotational Speed ◽  
Parameter Analysis ◽  
Optimum Process ◽  
Optimization Approach ◽  
Friction Stir ◽  
Dissimilar Friction Stir Welding

In this study, the Taguchi method was utilized to determine the optimum process parameters for dissimilar friction stir welding between AA6061 and AA7075 aluminium alloys. The Taguchi L9 orthogonal array and optimization approach was applied on three levels of three critical factors, namely rotational speed, transverse speed and tool tilt angle. The optimum levels of process parameters were determined through the Taguchi parametric design approach. Through the parameter analysis, the predicted value of the dissimilar joint’s tensile strength was calculated to be 209.7 MPa, which is in close proximity to the experimental data (219.6 MPa) with 4.5% error. It can be concluded that a high tensile value of 219.6 MPa was achieved using 1000 rpm rotational speed, 110 mm/min travel speed and 3 ̊ tilt angle.

Application of Taguchi Method for Determining Optimum Process Parameters of PMEDM with SiC Powder Suspended in Dielectric

2013 ◽  
Vol 1 (3) ◽  
pp. 37-42
Author(s):  
Deepak Rajendra Unune ◽  
◽  
Amit Aherwar ◽  
B.P. Pathri ◽  
Jai Kishan ◽  
...  
Keyword(s):  
Taguchi Method ◽  
Process Parameters ◽  
Optimum Process

Irradiation Induced Changes in Semiconducting Thin Films

2013 ◽  
Vol 341 ◽  
pp. 181-210 ◽  
Author(s):  
S.K. Tripathi
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Heavy Ions ◽  
Semiconductor Device ◽  
High Energy ◽  
Device Fabrication ◽  
Electrical Performance ◽  
Radiation Environment ◽  
Extended Defects ◽  
Semiconducting Thin Films

High-energy electron, proton, neutron, photon and ion irradiation of semiconductor diodes and solar cells has long been a topic of considerable interest in the field of semiconductor device fabrication. The inevitable damage production during the process of irradiation is used to study and engineer the defects in semiconductors. In a strong radiation environment in space, the electrical performance of solar cells is degraded due to direct exposure to energetically charged particles. A considerable amount of work has been reported on the study of radiation damage in various solar cell materials and devices in the recent past. In most cases, high-energy heavy ions damage the material by producing a large amount of extended defects, but high-energy light ions are suitable for producing and modifying the intrinsic point defects. The defects can play a variety of electronically active roles that affect the electrical, structural and optical properties of a semiconductor. This review article aims to present an overview of the advancement of research in the modification of glassy semiconducting thin films using different types of radiations (light, proton and swift heavy ions). The work which has been done in our laboratory related to irradiation induced effects in semiconducting thin films will also be compared with the existing literature.

scholarly journals Study of wire-electrical discharge machining parameters of titanium alloy by using taguchi method

2018 ◽  
Vol 7 (2.8) ◽  
pp. 10
Author(s):  
A VS Ram Prasad ◽  
Koona Ramji ◽  
B Raghu Kumar
Keyword(s):  
Surface Roughness ◽  
Taguchi Method ◽  
Process Parameters ◽  
Optimization Technique ◽  
Machining Process ◽  
Machining Parameters ◽  
Wire Edm ◽  
Pulse On Time ◽  
Pulse Off Time ◽  
Edm Process

Machining of Titanium alloys is difficult due to their chemical and physical properties namely excellent strength, chemical reactivity and low thermal conductivity. Traditional machining of such materials leads to formation of continuous chips and tool bits are subjected to chatter which leads to formation of poor surface on machined surface. In this study, Wire-EDM one of the most popular unconventional machining process which was used to machine such difficult-to-cut materials. Effect of Wire-EDM process parameters namely peak current, pulse-on- time, pulse-off-time, servo voltage on MRRand SR was investigated by Taguchi method. 0.25 mm brass wire was used in this process as electrode material. A surface roughness tester (Surftest 301) was used to measure surface roughness value of the machined work surface. A multi-response optimization technique was then utilized to optimize Wire-EDM process parameters for achieving maximum MRR and minimum SR simultaneously.

scholarly journals 3D Double Gate FinFET Construction of 30 nm Technology Node Impact Towards Short Channel Effect

2018 ◽  
Vol 12 (3) ◽  
pp. 1358
Author(s):  
Ameer F. Roslan ◽  
F. Salehuddin ◽  
A.S. M.Zain ◽  
K.E. Kaharudin ◽  
H. Hazura ◽  
...  
Keyword(s):  
Leakage Current ◽  
Electrical Characterization ◽  
Channel Length ◽  
Double Gate ◽  
Short Channel ◽  
3D Design ◽  
Drive Current ◽  
Minimum Requirement ◽  
Technology Roadmap ◽  
Low Performance

<p>This paper presents an investigation on properties of Double Gate FinFET (DGFinFET) and impact of physical properties of FinFET towards short channel effects (SCEs) for 30 nm device, where depletion-layer widths of the source-drain corresponds to the channel length aside from constant fin height (HFIN) and the fin thickness (TFIN). Virtual fabrication process of 3-dimensional (3D) design is applied throughout the study and its electrical characterization is employed and substantial is shown towards the FinFET design whereby in terms of the ratio of drive current against the leakage current (ION/IOFF ratio) at 563138.35 compared to prediction made by the International Technology Roadmap Semiconductor (ITRS) 2013. Conclusively, the incremental in ratio has fulfilled the desired in incremental on the drive current as well as reductions of the leakage current. Threshold voltage (VTH) meanwhile has also achieved the nominal requirement predicted by the International Technology Roadmap Semiconductor (ITRS) 2013 for which is at 0.676±12.7% V. The ION , IOFF and VTH obtained from the device has proved to meet the minimum requirement by ITRS 2013 for low performance Multi-Gate technology.</p>

scholarly journals The Mixed Current Model of Nano-MOSFETs Considering the Effect of Horizontal and Vertical Electric Fields

2019 ◽  
Author(s):  
Heng-Sheng Huang ◽  
Ping-Ray Huang ◽  
Mu-Chun Wang ◽  
Shuang-Yuan Chen ◽  
Shea-Jue Wang ◽  
...  
Keyword(s):  
Electric Fields ◽  
Current Model ◽  
Atomic Layer ◽  
Diffusion Current ◽  
Electrical Performance ◽  
Short Channel ◽  
Drive Current ◽  
Layer Deposition ◽  
And Diffusion ◽  
Better Than

A novel drive current model covering the effects of source/drain voltage (VDS) and gate voltage (VGS) and incorporating drift and diffusion current on the surface channel at the nano-node level, especially beyond 28nm node is presented. The effect of the diffusion current added is more satisfactory to describe the behavior of the drive current in nano-node MOSFETs, fabricated with the atomic-layer-deposition (ALD) technology. This breakthrough in model establishment can expose the long and short channel devices together. Introducing the variables of VDS and VGS, the mixed current model more effectively and meaningfully demonstrates the drive current of MOSFETs under the operation of horizontal, vertical, or mixed electrical field. In comparison between the simulation and experimental consequences, the electrical performance is impressive. The error between both is less than 1%, better than the empirical adjustment to issue a set of drive current models.

scholarly journals Electropolishing Parametric Optimization of Surface Quality for the Fabrication of a Titanium Microchannel Using the Taguchi Method

Machines ◽  
2021 ◽  
Vol 9 (12) ◽  
pp. 325
Author(s):  
Muslim Mahardika ◽  
Martin Andre Setyawan ◽  
Tutik Sriani ◽  
Norihisa Miki ◽  
Gunawan Setia Prihandana
Keyword(s):  
Taguchi Method ◽  
Surface Quality ◽  
Process Parameters ◽  
Applied Voltage ◽  
High Surface ◽  
Machining Process ◽  
Machining Parameters ◽  
Pareto Analysis ◽  
High Surface Quality

Titanium is widely used in biomedical components. As a promising advanced manufacturing process, electropolishing (EP) has advantages in polishing the machined surfaces of material that is hard and difficult to cut. This paper presents the fabrication of a titanium microchannel using the EP process. The Taguchi method was adopted to determine the optimal process parameters by which to obtain high surface quality using an L9 orthogonal array. The Pareto analysis of variance was utilized to analyze the three machining process parameters: applied voltage, concentration of ethanol in an electrolyte solution, and machining gap. In vitro experiments were conducted to investigate the fouling effect of blood on the microchannel. The result shows that an applied voltage of 20 V, an ethanol concentration of 20 vol.%, and a machining gap of 10 mm are the optimum machining parameters by which to enhance the surface quality of a titanium microchannel. Under the optimized machining parameters, the surface quality improved from 1.46 to 0.22 μm. Moreover, the adhesion of blood on the surface during the fouling experiment was significantly decreased, thus confirming the effectiveness of the proposed method.

Sign in / Sign up

Export Citation Format

Share Document