CMOS-MEMS Integration in Micro Fabry Perot Pressure Sensor Fabrication

2013 ◽  
Vol 64 (3) ◽  
Author(s):  
Nor Hafizah Ngajikin ◽  
Low Yee Ling ◽  
Nur Izzati Ismail ◽  
Abu Sahmah Mohd Supaát ◽  
Mohd Haniff Ibrahim ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
Material Selection ◽  
Integrated System ◽  
Oxide Semiconductor ◽  
Deep Reactive Ion Etching ◽  
Sensor Fabrication ◽  
Fabry Perot ◽  
Mems Technology ◽  
Cmos Mems ◽  
Spectrum Shift

Integration of Complimentary Metal-Oxide-Semiconductor (CMOS) and Microelectromechanical System (MEMS) technology in Fabry Perot blood pressure sensor (FPPS) fabrication processes is presented. The sensor that comprises of a 125 µm diameter of circular diaphragm is modeled to be fabricated using integration of CMOS-MEMS technology. To improve the sensor reliability, a sleeve structure is designed at the back of Silicon wafer by using MEMS Deep Reactive ion Etching (DRIE) process for fiber insertion, which offers a large bonding area. Optical light source at 550 nm wavelength is chosen for this device. The sensor diaphragm mechanic deflection and its optical spectrum is theoretically analyzed and simulated. The analytical results show high linear response in the range of 0 to 40 kPa and a reasonable sensitivity of 1.83 nm/kPa (spectrum shift/pressure) has been obtained for this sensor. The proposed integration of CMOS-MEMS technology limit the material selection yet produces an economical method of FPPS fabrication and integrated system.  

scholarly journals Towards an Ultra-Sensitive Temperature Sensor for Uncooled Infrared Sensing in CMOS–MEMS Technology

Micromachines ◽  
2019 ◽  
Vol 10 (2) ◽  
pp. 108 ◽  
Author(s):  
Hasan Göktaş
Keyword(s):  
Temperature Sensor ◽  
Complementary Metal Oxide Semiconductor ◽  
Dimensional Change ◽  
Oxide Semiconductor ◽  
Photon Detectors ◽  
Infrared Sensing ◽  
Sensing Applications ◽  
Mems Technology ◽  
Cmos Mems ◽  
Reliable Solution

Microbolometers and photon detectors are two main technologies to address the needs in Infrared Sensing applications. While the microbolometers in both complementary metal-oxide semiconductor (CMOS) and Micro-Electro-Mechanical Systems (MEMS) technology offer many advantages over photon detectors, they still suffer from nonlinearity and relatively low temperature sensitivity. This paper not only offers a reliable solution to solve the nonlinearity problem but also demonstrate a noticeable potential to build ultra-sensitive CMOS–MEMS temperature sensor for infrared (IR) sensing applications. The possibility of a 31× improvement in the total absolute frequency shift with respect to ambient temperature change is verified via both COMSOL (multiphysics solver) and theory. Nonlinearity problem is resolved by an operating temperature sensor around the beam bending point. The effect of both pull-in force and dimensional change is analyzed in depth, and a drastic increase in performance is achieved when the applied pull-in force between adjacent beams is kept as small as possible. The optimum structure is derived with a length of 57 µm and a thickness of 1 µm while avoiding critical temperature and, consequently, device failure. Moreover, a good match between theory and COMSOL is demonstrated, and this can be used as a guidance to build state-of-the-art designs.

A novel CMOS-MEMS integrated pressure sensing structure based on current mirror sensing technique

2015 ◽  
Vol 32 (2) ◽  
pp. 81-95 ◽  
Author(s):  
Pradeep Kumar Rathore ◽  
Brishbhan Singh Panwar ◽  
Jamil Akhtar
Keyword(s):  
Metal Oxide ◽  
Pressure Sensor ◽  
Wheatstone Bridge ◽  
Oxide Semiconductor ◽  
Current Mirror ◽  
Pressure Sensing ◽  
Content Type ◽  
Compressive Stresses ◽  
Cmos Mems ◽  
Bridge Circuits

Purpose – The present paper aims to propose a basic current mirror-sensing circuit as an alternative to the traditional Wheatstone bridge circuit for the design and development of high-sensitivity complementary metal oxide semiconductor (CMOS)–microelectromechanical systems (MEMS)-integrated pressure sensors. Design/methodology/approach – This paper investigates a novel current mirror-sensing-based CMOS–MEMS-integrated pressure-sensing structure based on the piezoresistive effect in metal oxide field effect transistor (MOSFET). A resistive loaded n-channel MOSFET-based current mirror pressure-sensing circuitry has been designed using 5-μm CMOS technology. The pressure-sensing structure consists of three identical 10-μm-long and 50-μm-wide n-channel MOSFETs connected in current mirror configuration, with its input transistor as a reference MOSFET and output transistors are the pressure-sensing MOSFETs embedded at the centre and near the fixed edge of a silicon diaphragm measuring 100 × 100 × 2.5 μm. This arrangement of MOSFETs enables the sensor to sense tensile and compressive stresses, developed in the diaphragm under externally applied pressure, with respect to the input reference transistor of the mirror circuit. An analytical model describing the complete behaviour of the integrated pressure sensor has been described. The simulation results of the pressure sensor show high pressure sensitivity and a good agreement with the theoretical model has been observed. A five mask level process flow for the fabrication of the current mirror-sensing-based pressure sensor has also been described. An n-channel MOSFET with aluminium gate was fabricated to verify the fabrication process and obtain its electrical characteristics using process and device simulation software. In addition, an aluminium gate metal-oxide semiconductor (MOS) capacitor was fabricated on a two-inch p-type silicon wafer and its CV characteristic curve was also measured experimentally. Finally, the paper presents a comparative study between the current mirror pressure-sensing circuit with the traditional Wheatstone bridge. Findings – The simulated sensitivities of the pressure-sensing MOSFETs of the current mirror-integrated pressure sensor have been found to be approximately 375 and 410 mV/MPa with respect to the reference transistor, and approximately 785 mV/MPa with respect to each other. The highest pressure sensitivities of a quarter, half and full Wheatstone bridge circuits were found to be approximately 183, 366 and 738 mV/MPa, respectively. These results clearly show that the current mirror pressure-sensing circuit is comparable and better than the traditional Wheatstone bridge circuits. Originality/value – The concept of using a basic current mirror circuit for sensing tensile and compressive stresses developed in micro-mechanical structures is new, fully compatible to standard CMOS processes and has a promising application in the development of miniaturized integrated micro-sensors and sensor arrays for automobile, medical and industrial applications.

Micromachining Process for Fiber Optic Pressure Sensor’s Tip

2011 ◽  
Vol 52-54 ◽  
pp. 2060-2064
Author(s):  
Muzalifah Mohd Said ◽  
Muhammad Noorazlan Shah Zainudin ◽  
A.F.M. Napiah Zul ◽  
M. Noh Zarina ◽  
M. Abd Himid Afifah ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
Fiber Optic ◽  
High Yield ◽  
Human Artery ◽  
Specific Level ◽  
Sensor Fabrication ◽  
Bulk Surface ◽  
Mems Technology ◽  
Base Measurement

Fiber optic interferometry pressure sensor is an excellent diaphragm-base measurement system. It is in-vivo medical device to measure local blood pressure by using endoscopic procedures via the blood vessels and the heart. The sensor must smaller than the size of human artery. This paper has concentrated on the MEMS technology in order to build the sensor tip using micromachining process to the proposed Fabry-Perot Interferometry (FPI) micro-pressure sensor. The feasibility of bulk, surface and hybrid micro-machining as viable proposition for sensor fabrication are reviewed. This paper will address the various factors involved in the manufacturing of FPI sensors, which gives high yield with a specific level of performance. The reliability of the sensor tip has been discussed.

scholarly journals Design and Fabrication of MOS Type Gas Sensor with Vertically Integrated Heater Using CMOS-MEMS Technology

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 772 ◽  
Author(s):  
Ya-Chu Lee ◽  
Ping-Lin Yang ◽  
Chun-I Chang ◽  
Weileun Fang
Keyword(s):  
Metal Oxide ◽  
Gas Sensor ◽  
Gas Sensing ◽  
Operating Temperature ◽  
Low Cost ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Resistance Change ◽  
Mems Technology ◽  
Cmos Mems

This study implements the metal-oxide-semiconductor (MOS) type gas sensor using the TSMC 0.35 μm 2P4M process. The gas concentration is detected based on the resistance change measured by the proposed sensor. This design has three merits: (1) low-cost post-CMOS process using metal/oxide wet etching, (2) composite sensing material based on ZnO-SnO2 coating on the CMOS-MEMS structure, (3) vertical integration of heater and ZnO-SnO2 gas-sensing films using CMOS-MEMS and drop casting technologies. Proposed design significantly increase the sensitivity at the high operating temperature. In summary, the sensitivity of presented sensor increased from 0.04%/% (O2/N2) at near room operating temperature to 0.2%/%(O2/N2) at near 140 °C for the range of 5–50% oxygen concentration.

scholarly journals A Thermopile Device with Subwavelength Structure by CMOS-MEMS Technology

2019 ◽  
Vol 9 (23) ◽  
pp. 5118 ◽  
Author(s):  
Chih-Hsiung Shen ◽  
Yun-Ying Yeh ◽  
Chi-Feng Chen
Keyword(s):  
Fdtd Method ◽  
Complementary Metal Oxide Semiconductor ◽  
Absorption Efficiency ◽  
Oxide Semiconductor ◽  
Visible Range ◽  
Subwavelength Structure ◽  
Mems Technology ◽  
Cmos Mems ◽  
Cmos Compatible ◽  
Simulation Results

Besides the application of the photonic crystal for the photodetector in the visible range, the infrared devices proposed with subwavelength structure are numerically and experimentally investigated thoroughly for infrared radiation sensing in this research. Several complementary metal oxide semiconductor (CMOS) compatible thermopiles with subwavelength structure (SWS) are proposed and simulated by the FDTD method. The proposed thermopiles are fabricated by the 0.35 μm 2P4M CMOS-MEMS process in TSMC (Taiwan Semiconductor Manufacturing Company). The measurement and simulation results show that the response of these devices with SWS is higher than for those without SWS. The trend of the measurement results is consistent with that of the simulation results. Obviously, the absorption efficiency of the CMOS compatible thermopile can be enhanced when the subwavelength structure exists.

CMOS-MEMS Based Current Mirror MOSFET Embedded Pressure Sensor for Healthcare and Biomedical Applications

2013 ◽  
Vol 647 ◽  
pp. 315-320 ◽  
Author(s):  
Pradeep Kumar Rathore ◽  
Brishbhan Singh Panwar
Keyword(s):  
Pressure Sensor ◽  
Biomedical Applications ◽  
Circuit Simulation ◽  
Applied Pressure ◽  
Pressure Sensors ◽  
Cmos Technology ◽  
Current Mirror ◽  
Sensing Element ◽  
Pressure Sensing ◽  
Cmos Mems

This paper reports on the design and optimization of current mirror MOSFET embedded pressure sensor. A current mirror circuit with an output current of 1 mA integrated with a pressure sensing n-channel MOSFET has been designed using standard 5 µm CMOS technology. The channel region of the pressure sensing MOSFET forms the flexible diaphragm as well as the strain sensing element. The piezoresistive effect in MOSFET has been exploited for the calculation of strain induced carrier mobility variation. The output transistor of the current mirror forms the active pressure sensing MOSFET which produces a change in its drain current as a result of altered channel mobility under externally applied pressure. COMSOL Multiphysics is utilized for the simulation of pressure sensing structure and Tspice is employed to evaluate the characteristics of the current mirror pressure sensing circuit. Simulation results show that the pressure sensor has a sensitivity of 10.01 mV/MPa. The sensing structure has been optimized through simulation for enhancing the sensor sensitivity to 276.65 mV/MPa. These CMOS-MEMS based pressure sensors integrated with signal processing circuitry on the same chip can be used for healthcare and biomedical applications.

scholarly journals Atomic Layer Deposition (ALD) of Metal Gates for CMOS

2019 ◽  
Vol 9 (11) ◽  
pp. 2388 ◽  
Author(s):  
Chao Zhao ◽  
Jinjuan Xiang
Keyword(s):  
Atomic Layer Deposition ◽  
Field Effect Transistors ◽  
Material Selection ◽  
Atomic Layer ◽  
Oxide Semiconductor ◽  
Metal Gate ◽  
Gate Stack ◽  
Short Channel ◽  
Metal Gates ◽  
Layer Deposition

The continuous down-scaling of complementary metal oxide semiconductor (CMOS) field effect transistors (FETs) had been suffering two fateful technical issues, one relative to the thinning of gate dielectric and the other to the aggressive shortening of channel in last 20 years. To solve the first issue, the high-κ dielectric and metal gate technology had been induced to replace the conventional gate stack of silicon dioxide layer and poly-silicon. To suppress the short channel effects, device architecture had changed from planar bulk Si device to fully depleted silicon on insulator (FDSOI) and FinFETs, and will transit to gate all-around FETs (GAA-FETs). Different from the planar devices, the FinFETs and GAA-FETs have a 3D channel. The conventional high-κ/metal gate process using sputtering faces conformality difficulty, and all atomic layer deposition (ALD) of gate stack become necessary. This review covers both scientific and technological parts related to the ALD of metal gates including the concept of effect work function, the material selection, the precursors for the deposition, the threshold voltage (Vt) tuning of the metal gate in contact with HfO2/SiO2/Si. The ALD of n-type metal gate will be detailed systematically, based mainly on the authors’ works in last five years, and the all ALD gate stacks will be proposed for the future generations based on the learning.

Novel die-sinking micro-electro discharge machining process using microelectromechanical systems technology

2006 ◽  
Vol 220 (9) ◽  
pp. 1481-1487 ◽  
Author(s):  
J-B Li ◽  
K Jiang ◽  
G J Davies
Keyword(s):  
Microelectromechanical Systems ◽  
Machining Process ◽  
Metallic Surface ◽  
Manufacturing Cost ◽  
Sem Images ◽  
Deep Reactive Ion Etching ◽  
Electro Discharge Machining ◽  
Mems Technology ◽  
Fabrication Condition ◽  
Edm Process

A novel die-sinking micro-electro discharge machining (EDM) process is presented for volume fabrication of metallic microcomponents. In the process, a high-precision silicon electrode is fabricated using deep reactive ion etching (DRIE) process of microelectromechanical systems (MEMS) technology and then coated with a thin layer of copper to increase the conductivity. The metalized Si electrode is used in the EDM process to manufacture metallic microcomponents by imprinting the electrode onto a flat metallic surface. The two main advantages of this process are that it enables the fabrication of metallic microdevices and reduces manufacturing cost and time. The development of the new EDM process is described. A silicon component was produced using the Surface Technology Systems plasma etcher and the DRIE process. Such components can be manufactured with a precision in nanometres. The minimum feature of the component is 50 μm. In the experiments, the Si component was coated with copper and then used as the electrode on an EDM machine of 1 μm resolution. In the manufacturing process, 130 V and 0.2 A currents were used for a period of 5 min. The SEM images of the resulting device show clear etched areas, and the electric discharge wave chart indicates a good fabrication condition. The experimental results have been analysed and the new micro-EDM process is found to be able to fabricate 25 μm features.

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