scholarly journals Freezing, Melting, and Light Stress on the Photophysiology of Ice Algae: Ex Situ Incubation of the Ice Algal diatom Fragilariopsis cylindrus (Bacillariophyceae) Using an Ice Tank

2020 ◽  
Vol 56 (5) ◽  
pp. 1323-1338 ◽  
Author(s):  
Kazuhiro Yoshida ◽  
Andreas Seger ◽  
Fraser Kennedy ◽  
Andrew McMinn ◽  
Koji Suzuki
Keyword(s):  
Light Stress ◽  
Ex Situ ◽  
Ice Algae ◽  
Fragilariopsis Cylindrus

scholarly journals Low Fe Availability for Photosynthesis of Sea-Ice Algae: Ex situ Incubation of the Ice Diatom Fragilariopsis cylindrus in Low-Fe Sea Ice Using an Ice Tank

2021 ◽  
Vol 8 ◽  
Author(s):  
Kazuhiro Yoshida ◽  
Andreas Seger ◽  
Matthew Corkill ◽  
Petra Heil ◽  
Kristen Karsh ◽  
...  
Keyword(s):  
Sea Ice ◽  
High Light ◽  
Freezing Stress ◽  
Ex Situ ◽  
Ice Algae ◽  
Light Conditions ◽  
Low Light ◽  
Ice Melt ◽  
Sea Ice Algae ◽  
Fragilariopsis Cylindrus

Sea-ice algae play a crucial role in the ecology and biogeochemistry of sea-ice zones. They not only comprise the base of sea-ice ecosystems, but also seed populations of extensive ice-edge blooms during ice melt. Ice algae must rapidly acclimate to dynamic light environments, from the low light under sea ice to high light within open waters. Recently, iron (Fe) deficiency has been reported for diatoms in eastern Antarctic pack ice. Low Fe availability reduces photosynthetic plasticity, leading to reduced ice-algal primary production. We developed a low-Fe ice tank to manipulate Fe availability in sea ice. Over 20 days in the ice tank, the Antarctic ice diatom Fragilariopsis cylindrus was incubated in artificial low-Fe sea ice ([total Fe] = 20 nM) in high light (HL) and low light (LL) conditions. Melted ice was also exposed to intense light to simulate light conditions typical for melting ice in situ. When diatoms were frozen in, the maximum photochemical quantum efficiency of photosystem II (PSII), Fv/Fm, was suppressed by freezing stress. However, the diatoms maintained photosynthetic capability throughout the ice periods with a stable Fv/Fm value and increased photoprotection through non-photochemical quenching (NPQ) via photoprotective xanthophyll cycling (XC) and increased photoprotective carotenoid levels compared to pre-freeze-up. Photoprotection was more pronounced in the HL treatment due to greater light stress. However, the functional absorption cross section of PSII, σPSII, in F. cylindrus consistently increased after freezing, especially in the LL treatment (σPSII > 10 nm2 PSII–1). Our study is the first to report such a large σPSII in ice diatoms at low Fe conditions. When the melted sea ice was exposed to high light, Fv/Fm was suppressed. NPQ and XC were slightly upregulated, but not to values normally observed when Fe is not limiting, which indicates reduced photosynthetic flexibility to adapt to environmental changes during ice melt under low Fe conditions. Although ice algae can optimize their photosynthesis to sea-ice environments, chronic Fe starvation led to less flexibility of photoacclimation, particularly in low light conditions. This may have detrimental consequences for ice algal production and trophic interactions in sea-ice ecosystems if the recent reduction in sea-ice extent continues.

An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

1988 ◽  
Vol 46 ◽  
pp. 884-885
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Metal Base ◽  
In Situ Experiments ◽  
Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

The use of transmission and analytical electron microscopy in studying reactions and phase transformations in thin film

1993 ◽  
Vol 51 ◽  
pp. 842-843
Author(s):  
K. Barmak
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transformations ◽  
Analytical Electron Microscopy ◽  
Ex Situ ◽  
Multilayer Thin Films ◽  
Absolute Concentration ◽  
Analytical Electron ◽  
Deposition Step

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.

Transmission Electron Microscopy of Epitaxial silicides grown by ultra high vacuum deposition

1989 ◽  
Vol 47 ◽  
pp. 462-463
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Transmission Electron

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.

Interfacial properties of GaSb/InAs superlattices

1993 ◽  
Vol 51 ◽  
pp. 826-827
Author(s):  
M. E. Twigg ◽  
B. R. Bennett ◽  
J. R. Waterman ◽  
J. L. Davis ◽  
B. V. Shanabrook ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Molecular Beam ◽  
Infrared Detector ◽  
Interfacial Properties ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Absorption Coefficients ◽  
X Ray ◽  
Short Period ◽  
High Optical Absorption

Recently, the GaSb/InAs superlattice system has received renewed attention. The interest stems from a model demonstrating that short period Ga1-xInxSb/InAs superlattices will have both a band gap less than 100 meV and high optical absorption coefficients, principal requirements for infrared detector applications. Because this superlattice system contains two species of cations and anions, it is possible to prepare either InSb-like or GaAs-like interfaces. As such, the system presents a unique opportunity to examine interfacial properties.We used molecular beam epitaxy (MBE) to prepare an extensive set of GaSb/InAs superlattices grown on an GaSb buffer, which, in turn had been grown on a (100) GaAs substrate. Through appropriate shutter sequences, the interfaces were directed to assume either an InSb-like or GaAs-like character. These superlattices were then studied with a variety of ex-situ probes such as x-ray diffraction and Raman spectroscopy. These probes confirmed that, indeed, predominantly InSb-like and GaAs-like interfaces had been achieved.

Ex-situ conservation of medicinal plant genetic resources managed by national agrobiodiversity center of Korea

Planta Medica ◽  
2012 ◽  
Vol 78 (11) ◽  
Author(s):  
JS Sung ◽  
CW Jeong ◽  
YY Lee ◽  
HS Lee ◽  
YA Jeon ◽  
...  
Keyword(s):  
Medicinal Plant ◽  
Genetic Resources ◽  
Ex Situ Conservation ◽  
Plant Genetic Resources ◽  
Ex Situ

Untersuchung der Effektivität der arteriellen ex-situ Perfusion vor Lebertransplantation im Schweinemodell

2007 ◽  
Vol 45 (01) ◽  
Author(s):  
C Moench ◽  
A Heimann ◽  
O Kempski ◽  
D Foltys ◽  
G Otto
Keyword(s):  
Ex Situ

Ex Situ Loss Rates from ACZA Treated and Wrapped Piles

Ports 2010 ◽  
2010 ◽  
Author(s):  
Rolf Schottle ◽  
Katherine Prickett
Keyword(s):  
Ex Situ ◽  
Loss Rates
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