Enhancing giant dielectric properties of Ta 5+ ‐doped Na 1/2 Y 1/2 Cu 3 Ti 4 O 12 ceramics by engineering grain and grain boundary

2022 ◽  
Author(s):  
Pariwat Saengvong ◽  
Narong Chanlek ◽  
Pornjuk Srepusharawoot ◽  
Viyada Harnchana ◽  
Prasit Thongbai
Keyword(s):  
Dielectric Properties ◽  
Grain Boundary ◽  
Giant Dielectric

Relaxation Behavior of Zr Substituted CaCu3Ti4O12 Ceramics

2011 ◽  
Vol 687 ◽  
pp. 375-379 ◽  
Author(s):  
Hong Tao Yu ◽  
Wen Bo Zhang ◽  
Jing Song Liu ◽  
Han Xing Liu
Keyword(s):  
Grain Size ◽  
Relaxation Time ◽  
Dielectric Properties ◽  
Grain Boundary ◽  
Dielectric Response ◽  
Relaxation Behavior ◽  
Impedance Spectra ◽  
Boundary Concentration ◽  
Giant Dielectric ◽  
Boundary Relaxation

The dielectric properties of Zr substituted CaCu3Ti4O12ceramics have been investigated in detail. Grain size decreases with Zr content increasing. The hetero-electrical microstructures of prepared samples have been confirmed by the impedance spectra. The dielectric loss has been improved by Zr doping because of the enhancement of grain boundary resistivity. A Debye-like boundary relaxation behavior has been observed in the temperature range of 220-600K. As Zr content increases, the relaxation time increases due to the higher grain boundary concentration. This work has provided an additional proof for the origin of giant dielectric response in CaCu3Ti4O12ceramics.

Significantly improved non-Ohmic and giant dielectric properties of CaCu3-Zn Ti4O12 ceramics by enhancing grain boundary response

2017 ◽  
Vol 43 (2) ◽  
pp. 2705-2711 ◽  
Author(s):  
Jakkree Boonlakhorn ◽  
Pinit Kidkhunthod ◽  
Bundit Putasaeng ◽  
Prasit Thongbai
Keyword(s):  
Dielectric Properties ◽  
Grain Boundary ◽  
Giant Dielectric

Effects of DC bias on non-ohmic sample-electrode contact and grain boundary responses in giant-permittivity La1.7Sr0.3Ni1−xMgxO4 ceramics

RSC Advances ◽  
2016 ◽  
Vol 6 (94) ◽  
pp. 91377-91385 ◽  
Author(s):  
Keerati Meeporn ◽  
Narong Chanlek ◽  
Prasit Thongbai
Keyword(s):  
Dielectric Properties ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Giant Dielectric ◽  
Electrode Contact ◽  
Dc Bias ◽  
Electrical Responses

The effects of DC bias on the giant dielectric properties and electrical responses of non-ohmic sample-electrode contact and grain boundaries of La1.7Sr0.3Ni1−xMgxO4 (x = 0–0.5) ceramics were studied.

scholarly journals Effects of Charge Compensation on Colossal Permittivity and Electrical Properties of Grain Boundary of CaCu3Ti4O12 Ceramics Substituted by Al3+ and Ta5+/Nb5+

Molecules ◽  
2021 ◽  
Vol 26 (11) ◽  
pp. 3294
Author(s):  
Jakkree Boonlakhorn ◽  
Jedsada Manyam ◽  
Pornjuk Srepusharawoot ◽  
Sriprajak Krongsuk ◽  
Prasit Thongbai
Keyword(s):  
Dielectric Properties ◽  
Electrical Properties ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Barrier Height ◽  
Potential Barrier ◽  
Charge Compensation ◽  
Solid State Reaction Method ◽  
Wide Frequency Range ◽  
Potential Barrier Height

The effects of charge compensation on dielectric and electrical properties of CaCu3Ti4-x(Al1/2Ta1/4Nb1/4)xO12 ceramics (x = 0−0.05) prepared by a solid-state reaction method were studied based on the configuration of defect dipoles. A single phase of CaCu3Ti4O12 was observed in all ceramics with a slight change in lattice parameters. The mean grain size of CaCu3Ti4-x(Al1/2Ta1/4Nb1/4)xO12 ceramics was slightly smaller than that of the undoped ceramic. The dielectric loss tangent can be reduced by a factor of 13 (tanδ ~0.017), while the dielectric permittivity was higher than 104 over a wide frequency range. Impedance spectroscopy showed that the significant decrease in tanδ was attributed to the highly increased resistance of the grain boundary by two orders of magnitude. The DFT calculation showed that the preferential sites of Al and Nb/Ta were closed together in the Ti sites, forming self-charge compensation, and resulting in the enhanced potential barrier height at the grain boundary. Therefore, the improved dielectric properties of CaCu3Ti4-x(Al1/2Ta1/4Nb1/4)xO12 ceramics associated with the enhanced electrical properties of grain boundaries. In addition, the non-Ohmic properties were also improved. Characterization of the grain boundaries under a DC bias showed the reduction of potential barrier height at the grain boundary. The overall results indicated that the origin of the colossal dielectric properties was caused by the internal barrier layer capacitor structure, in which the Schottky barriers at the grain boundaries were formed.

Influence of Grain and Grain-Boundary Resistances on Dielectric Properties of KNbO3 Under Small DC Bias Field

2013 ◽  
Vol 96 (10) ◽  
pp. 3127-3132
Author(s):  
Sankaramangalam Ulhas Sharath ◽  
Rajesh Kumar Singh ◽  
  Raghvendra ◽  
Bheeshma Pratap Singh ◽  
Pravin Kumar ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Grain Boundary ◽  
Bias Field ◽  
Dc Bias ◽  
Dc Bias Field

Effect of Zr doping on dielectric properties and grain boundary response of CdCu3Ti4O12 ceramics

2018 ◽  
Vol 44 (16) ◽  
pp. 20311-20321 ◽  
Author(s):  
Zhanhui Peng ◽  
Pengfei Liang ◽  
Yichen Xiang ◽  
Hui Peng ◽  
Xiaolian Chao ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Grain Boundary

Effects of Mg2+ doping ions on giant dielectric properties and electrical responses of Na1/2Y1/2Cu3Ti4O12 ceramics

2016 ◽  
Vol 42 (14) ◽  
pp. 16287-16295 ◽  
Author(s):  
Jutapol Jumpatam ◽  
Areeya Mooltang ◽  
Bundit Putasaeng ◽  
Pinit Kidkhunthod ◽  
Narong Chanlek ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Giant Dielectric ◽  
Electrical Responses

Direct Correlations of Grain Boundary Potentials to Chemical States and Dielectric Properties of Doped CaCu3Ti4O12 Thin Films

2018 ◽  
Vol 10 (18) ◽  
pp. 16203-16209 ◽  
Author(s):  
Ahra Cho ◽  
Chan Su Han ◽  
Meenjoo Kang ◽  
Wooseok Choi ◽  
Jihwan Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Grain Boundary ◽  
Chemical States
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