Orthorhombic‐like atomic arrangement in hafnium‐oxide‐based nanoparticles

2021 ◽  
Author(s):  
Konomi Fujimoto ◽  
Yukio Sato ◽  
Yoshifumi Fuchikami ◽  
Ryo Teranishi ◽  
Kenji Kaneko
Keyword(s):  
Hafnium Oxide ◽  
Atomic Arrangement

Scalability of MOCVD-deposited Hafnium Oxide

2003 ◽  
Vol 765 ◽  
Author(s):  
S. Van Elshocht ◽  
R. Carter ◽  
M. Caymax ◽  
M. Claes ◽  
T. Conard ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
Interfacial Layer ◽  
Gate Dielectric ◽  
Deposition Process ◽  
Oxide Thickness ◽  
Process Conditions ◽  
Primary Concern ◽  
Gate Electrode ◽  
K Value ◽  
High K

AbstractBecause of aggressive downscaling to increase transistor performance, the physical thickness of the SiO2 gate dielectric is rapidly approaching the limit where it will only consist of a few atomic layers. As a consequence, this will result in very high leakage currents due to direct tunneling. To allow further scaling, materials with a k-value higher than SiO2 (“high-k materials”) are explored, such that the thickness of the dielectric can be increased without degrading performance.Based on our experimental results, we discuss the potential of MOCVD-deposited HfO2 to scale to (sub)-1-nm EOTs (Equivalent Oxide Thickness). A primary concern is the interfacial layer that is formed between the Si and the HfO2, during the MOCVD deposition process, for both H-passivated and SiO2-like starting surfaces. This interfacial layer will, because of its lower k-value, significantly contribute to the EOT and reduce the benefit of the high-k material. In addition, we have experienced serious issues integrating HfO2 with a polySi gate electrode at the top interface depending on the process conditions of polySi deposition and activation anneal used. Furthermore, we have determined, based on a thickness series, the k-value for HfO2 deposited at various temperatures and found that the k-value of the HfO2 depends upon the gate electrode deposited on top (polySi or TiN).Based on our observations, the combination of MOCVD HfO2 with a polySi gate electrode will not be able to scale below the 1-nm EOT marker. The use of a metal gate however, does show promise to scale down to very low EOT values.

scholarly journals Effect of the atomic arrangement of amorphized zeolite on the recrystallization behavior to crystalline zeolite

2011 ◽  
Vol 119 (1391) ◽  
pp. 605-608 ◽  
Author(s):  
Kaku SATO ◽  
Toru WAKIHARA ◽  
Shinji KOHARA ◽  
Junichi TATAMI ◽  
Satoshi INAGAKI ◽  
...  
Keyword(s):  
Recrystallization Behavior ◽  
Atomic Arrangement

Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application

Nanoscale ◽  
2021 ◽  
Author(s):  
Keonwon Beom ◽  
Jimin Han ◽  
Hyun-Mi Kim ◽  
Tae-Sik Yoon
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Hafnium Oxide ◽  
Synaptic Weight ◽  
Drain Current ◽  
Gate Insulator ◽  
Channel Layer ◽  
Indium Zinc Oxide ◽  
Wide Range

Wide range synaptic weight modulation with a tunable drain current was demonstrated in thin-film transistors (TFTs) with a hafnium oxide (HfO2−x) gate insulator and an indium-zinc oxide (IZO) channel layer...

scholarly journals 2D-3D integration of hexagonal boron nitride and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Hitesh Agarwal ◽  
Bernat Terrés ◽  
Lorenzo Orsini ◽  
Alberto Montanaro ◽  
Vito Sorianello ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hafnium Oxide ◽  
High Speed ◽  
Hexagonal Boron Nitride ◽  
Temperature Stability ◽  
Cost Effective ◽  
Fold Increase ◽  
Building Blocks ◽  
High Quality ◽  
New Device

AbstractElectro-absorption (EA) waveguide-coupled modulators are essential building blocks for on-chip optical communications. Compared to state-of-the-art silicon (Si) devices, graphene-based EA modulators promise smaller footprints, larger temperature stability, cost-effective integration and high speeds. However, combining high speed and large modulation efficiencies in a single graphene-based device has remained elusive so far. In this work, we overcome this fundamental trade-off by demonstrating the 2D-3D dielectric integration in a high-quality encapsulated graphene device. We integrated hafnium oxide (HfO2) and two-dimensional hexagonal boron nitride (hBN) within the insulating section of a double-layer (DL) graphene EA modulator. This combination of materials allows for a high-quality modulator device with high performances: a ~39 GHz bandwidth (BW) with a three-fold increase in modulation efficiency compared to previously reported high-speed modulators. This 2D-3D dielectric integration paves the way to a plethora of electronic and opto-electronic devices with enhanced performance and stability, while expanding the freedom for new device designs.

scholarly journals Dynamics of DNA Clogging in Hafnium Oxide Nanopores

2020 ◽  
Vol 124 (51) ◽  
pp. 11573-11583
Author(s):  
Shiyu Li ◽  
Shuangshuang Zeng ◽  
Chenyu Wen ◽  
Laurent Barbe ◽  
Maria Tenje ◽  
...  
Keyword(s):  
Hafnium Oxide

scholarly journals Enhanced pyroelectric response at morphotropic and field-induced phase transitions in ferroelectric hafnium oxide thin films

APL Materials ◽  
2021 ◽  
Vol 9 (5) ◽  
pp. 051120
Author(s):  
Clemens Mart ◽  
Thomas Kämpfe ◽  
Kati Kühnel ◽  
Malte Czernohorsky ◽  
Sabine Kolodinski ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transitions ◽  
Hafnium Oxide ◽  
Oxide Thin Films ◽  
Pyroelectric Response
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