In Situ Tensile Behavior of Hi‐Nicalon Silicon Carbide Fibers Exposed to High Temperature Argon Plasma

2021 ◽  
Author(s):  
Zhuang Liu ◽  
Jason M. Meyers ◽  
Jeffrey Schindler ◽  
Frederic Sansoz ◽  
Ting Tan ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Argon Plasma ◽  
Tensile Behavior ◽  
Silicon Carbide Fibers

In-situ generation of graphene network in silicon carbide fibers: Role of iodine and carbon monoxide

Carbon ◽  
2020 ◽  
Vol 158 ◽  
pp. 110-120
Author(s):  
Junsung Hong ◽  
Youngjin Ko ◽  
Kwang-Yeon Cho ◽  
Dong-Geun Shin ◽  
Prabhakar Singh ◽  
...  
Keyword(s):  
Carbon Monoxide ◽  
Silicon Carbide ◽  
Silicon Carbide Fibers ◽  
In Situ Generation

Operation of Silicon Carbide Integrated Circuits under High Temperature and Pressure

2017 ◽  
Vol 2017 (1) ◽  
pp. 000526-000530
Author(s):  
M. Barlow ◽  
A. M. Francis ◽  
J. Holmes
Keyword(s):  
Silicon Carbide ◽  
High Pressure ◽  
High Temperature ◽  
Integrated Circuits ◽  
Integrated Circuit ◽  
Leading Edge ◽  
Limited Information ◽  
High Temperature And Pressure ◽  
Temperature And Pressure

Abstract Silicon carbide integrated circuits have demonstrated the ability to function at temperatures as high as 600 °C for extended periods of time. Many environments where high temperature in-situ electronics are desired also have large pressures as well. While some validation has been done for high pressure environments, limited information on the parametric impact of pressure on SiC integrated circuits is available. This paper takes two leading-edge SiC integrated circuit processes using two different classes of devices (JFET and CMOS), and measures the performance through temperature and pressure variation. Circuit functionality was verified at high temperature (475 °C) as well as high pressure (1700 psig).

CVD Coating of Ceramic Monofilaments

1991 ◽  
Vol 250 ◽  
Author(s):  
Jason R. Guth
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Hydrogen Reduction ◽  
Low Pressure ◽  
Refractory Metals ◽  
High Toughness ◽  
Composite Systems ◽  
Silicon Carbide Fibers ◽  
Sapphire Fibers

AbstractIn many composite systems it has become apparent that coatings on the reinforcements are necessary to achieve high toughness materials. In order to examine materials which may be used as coatings on ceramic monofilaments and remain stable in high temperature, oxidizing environments, the deposition of a number of refractory metals has been attempted. The results of coating experiments using silicon carbide fibers as substrates as well as general observations concerning the prospects of continuously coating long lengths of fibers will be discussed. The materials studied include carbon, cobalt, zirconium, molybdenum, tantalum, tungsten, and iridium. Carbon has been deposited from methane and propylene onto both SiC and sapphire fibers. Deposition of the metals has been achieved by direct chlorination of the metals followed by hydrogen reduction at the fiber. Iridium(III)2,4-pentanedionate has been used to deposit iridium metal. All metals were deposited at low pressure in a hot wall reactor with fibers continuously spooled through the reactor.

High-Temperature Performance of Next-Generation Silicon Carbide Fibers for CMCs

2021 ◽  
Vol 10 (2) ◽  
pp. 20200131
Author(s):  
Shay Harrison ◽  
John Schneiter ◽  
Joseph Pegna ◽  
Erik Vaaler ◽  
Ramkiran Goduguchinta ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Next Generation ◽  
Silicon Carbide Fibers ◽  
Temperature Performance
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