Theoretical investigation of formation and diffusion mechanisms for point defects in ytterbium and lutetium silicates

2021 ◽  
Author(s):  
Yun Fan ◽  
Mengling Lai ◽  
Juanli Zhao ◽  
Yun Yao ◽  
Lan Yang ◽  
...  
Keyword(s):  
Theoretical Investigation ◽  
Point Defects ◽  
Diffusion Mechanisms ◽  
And Diffusion

Fermi-Level Effect, Electric Field Effect, and Diffusion Mechanisms in GaAs Based III-V Compound Semiconductors

1998 ◽  
Vol 527 ◽  
Author(s):  
T. Y. Tan ◽  
C.-H. Chen ◽  
U. Gösele ◽  
R. Scholz
Keyword(s):  
Electric Field ◽  
Fermi Level ◽  
Point Defects ◽  
Field Effect ◽  
Pressure Effect ◽  
Electric Field Effect ◽  
Diffusion Mechanisms ◽  
And Diffusion ◽  
Level Effect

ABSTRACTDiffusion mechanisms and point defects in GaAs and related III-V compounds are discussed. An understanding of the As sublattice situation has been arrived at fairly recently and is presently tentative. Understanding of the Ga sublattice situation has become more acceptable in that experimental results are consistently explained by the Fermi-level effect and the As4 pressure effect. On the Ga sublattice, though controversies still exist, some are readily resolved by noting the role of the electric field produced by semiconductor electrical junctions, physical junctions, and surfaces.

The Nature and Diffusion of Intrinsic Point Defects in SiC

2002 ◽  
Vol 389-393 ◽  
pp. 471-476 ◽  
Author(s):  
M. Bockstedte ◽  
Matthias Heid ◽  
Alexander Mattausch ◽  
Oleg Pankratov
Keyword(s):  
Point Defects ◽  
Intrinsic Point Defects ◽  
And Diffusion
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