scholarly journals Revealing the effects of aerosol deposition on the substrate‐film interface using NaCl coating

2019 ◽  
Vol 102 (10) ◽  
pp. 5763-5771 ◽  
Author(s):  
Neamul H. Khansur ◽  
Udo Eckstein ◽  
Yizhe Li ◽  
David A. Hall ◽  
Joachim Kaschta ◽  
...  
1987 ◽  
Vol 56 (9) ◽  
pp. 3396-3397 ◽  
Author(s):  
Keiji Tsunetomo ◽  
Tatsumi Sugishima ◽  
Takeshi Imura ◽  
Yukio Osaka

2011 ◽  
Vol 17 (S2) ◽  
pp. 1720-1721
Author(s):  
T Dhakal ◽  
A Nandur ◽  
R Christian ◽  
D Vanhart ◽  
C Westgate

Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.


1994 ◽  
Vol 9 (6) ◽  
pp. 1376-1383 ◽  
Author(s):  
Beesabathina D. Prasad ◽  
L. Salamanca-Riba ◽  
S.N. Mao ◽  
X.X. Xi ◽  
T. Venkatesan ◽  
...  

The growth morphology and interface structure of Nd1.85Ce0.15CuO4−y (NCCO) films grown by pulsed laser deposition on two different types of substrates, “perovskite” LaAlO3 (LAO) and SrTiO3 (STO) and “fluorite” Y2O3-stabilized ZrO2 (YSZ), were studied using cross-sectional electron microscopy. Structurally, the NCCO films are different when grown on the two types of substrates in three aspects: (i) epitaxy, (ii) substrate-film intermixing, and (iii) substrate-film interface roughness. In general, films deposited on “fluorite” substrates showed better superconducting properties than the films grown on “perovskite” substrates, especially for thinner films. Lattice mismatch considerations are not sufficient to explain the observed differences since films grown on the YSZ substrate showed sharp substrate-film interface in spite of their large lattice misfit. The atomic arrangements at the interface were analyzed in terms of electrostatic energy (charge balance) and matching of the oxygen sublattices in order to account for the experimental results.


1997 ◽  
Vol 3 (S2) ◽  
pp. 955-956
Author(s):  
Z.L. Wang ◽  
J.S. Yin

Colossal magnetoresistive (CMR) has been observed in a class of oxides, La1-xAxMnO3 (A = Ca, Sr, or Ba). Transition and rare earth metal elements with mixed valences are usually present in these materials for stimulating structural and chemical evolutions, leading to specific functionality. The partial substitution of trivalent La3+ by divalent element A2+ is balanced by the conversion of Mn valence states between Mn3+ and Mn4+ and the creation of oxygen vacancies as well, since the ionic structure of La1-xAxMnO3-y is proposed to bein which the valence conversion is the key for determining the material's properties. In practice, quantifying of oxygen vacancies is a challenge to existing microscopy techniques particularly for thin film specimens because of the strong effect from the defects at the substrate-film interface and the surface disordering.


2020 ◽  
Vol 34 (18) ◽  
pp. 2050200
Author(s):  
Xue Ge ◽  
Hanming Zhu ◽  
Song Yue

The performance of thermoelectric (TE) thin films strongly depends on the substrates. In our previous study, we investigated the power factor (PF) 1.78 mW/[Formula: see text] at 700 K in [Formula: see text] thin film grown on single crystalline Si, comparable to the state of art in other TE thin films. Such boosted PF originates mainly from the significantly enhanced Seebeck coefficient, correlated with the contribution of the Si substrate. In this paper, the PF has been prominently optimized up to 12.5 mW/[Formula: see text] at 668 K by adjusting the thickness of [Formula: see text] film in the [Formula: see text]/Si system, which could be understood in the frame work of parallel slab model. Experimentally, the effective TE properties were susceptible to the substrate–film interface. The existence of Mo in [Formula: see text] film might limit the formation of [Formula: see text] interfacial layer. These results suggest a simple, low-cost, scalable technique route to explore highly effective TE devices.


2004 ◽  
Vol 84 (7) ◽  
pp. 1150-1152 ◽  
Author(s):  
Guus Rijnders ◽  
Seve Currás ◽  
Mark Huijben ◽  
Dave H. A. Blank ◽  
Horst Rogalla

1996 ◽  
Vol 92 ◽  
pp. 471-474 ◽  
Author(s):  
Kai-Ming Ching ◽  
Wei-Der Chang ◽  
Tsung-Shune Chin

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