scholarly journals Phase transition and energy storage behavior of antiferroelectric PLZT thin films epitaxially deposited on SRO buffered STO single crystal substrates

2019 ◽  
Vol 102 (9) ◽  
pp. 5180-5191 ◽  
Author(s):  
Min Gao ◽  
Xiao Tang ◽  
Chung Ming Leung ◽  
Steve Dai ◽  
Jiefang Li ◽  
...  
1994 ◽  
Vol 157 (1) ◽  
pp. 347-352 ◽  
Author(s):  
Chianping Ye ◽  
Paul Baude ◽  
Dennis L. Polla

2014 ◽  
Vol 40 (1) ◽  
pp. 557-562 ◽  
Author(s):  
Zhongqiang Hu ◽  
Beihai Ma ◽  
Shanshan Liu ◽  
Manoj Narayanan ◽  
Uthamalingam Balachandran

2020 ◽  
Vol 22 (38) ◽  
pp. 21893-21899 ◽  
Author(s):  
W. L. Zhang ◽  
Y. H. Mao ◽  
L. Cui ◽  
M. H. Tang ◽  
P. Y. Su ◽  
...  

The effect of the γ-ray total dose radiation on the energy storage density (ESD) and the phase transition of antiferroelectric-like (AFE-like) Al-doped HfO2 (HfAlO) thin films was investigated.


Author(s):  
K. Hubkowska ◽  
M. Pająk ◽  
A. Czerwiński

AbstractThe study of the hydrogen sorption process in metals/alloys of different forms is crucial for developing the fields of catalysis and energy storage. The objective of this research was to examine basic hydrogen electrosorption properties of Pd-Ir alloy thin films obtained through electrodeposition. Pd-Ir alloys, containing more than 87% at. Pd, were successfully potentiostatically electrodeposited from aqueous baths containing PdCl2 and IrCl3. X-ray diffractometry confirmed the Pd-Ir alloy formation and homogeneity of the deposits. The hydrogen electrochemical absorption was carried out with the use of cyclic voltammetry and chronoamperometry. The values of H/(Pd+Ir) for Pd-Ir alloys containing less than 3% at. Ir are similar, comparable to Pd. The further increase of Ir content results in the abrupt drop of hydrogen absorbing capacity. The linear decrease of the potential of α→β phase transition versus Pd content is observed, confirming classification of the Pd-Ir alloys to the group of the contracted alloys. Graphical abstract


MRS Advances ◽  
2020 ◽  
Vol 5 (64) ◽  
pp. 3521-3545
Author(s):  
Xue-Zeng Lu ◽  
James M. Rondinelli

AbstractAntiferroelectrics have been studied for decades, with most research focused on PbZrO3 or related compounds obtained through chemical substitution. Although there are several important antiferroelectrics found in AVO4 (A=Dy, Bi), orthorhombic ABC semiconductors (e.g., MgSrSi) and hydrogen-bonded antiferroelectric materials, experimentally demonstrated antiferroelectrics are far less common. Furthermore, antiferroelectrics have potential applications in energy storage and for strain and force generators. In recent years, hybrid improper ferroelectrics have been intensively studied, along which the hybrid improper antiferroelectric phase was proposed and demonstrated in (001) Ruddlesden−Popper A3B2O7 thin films from first-principles calculations. Later, the hybrid improper antiferroelectric phase was discovered experimentally in several Ruddlesden−Popper perovskites in bulk. Across the hybrid improper ferroelectric-antiferroelectric phase transition, several interesting phenomena were also predicted. In this snapshot review, we describe recent progress in hybrid improper antiferroelectricity.


1982 ◽  
Vol 85 (1) ◽  
pp. 297-303 ◽  
Author(s):  
A. D. Bandrauk ◽  
K. D. Truong ◽  
S. Jandl

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