scholarly journals The effects of external fields in ceramic sintering

2018 ◽  
Author(s):  
Shikhar K. Jha ◽  
Xin Li Phuah ◽  
Jian Luo ◽  
Costas P. Grigoropoulos ◽  
Haiyan Wang ◽  
...  
Keyword(s):  
External Fields ◽  
Ceramic Sintering

ION DETECTION TECHNIQUES APPLIED TO RYDBERG ATOMS IN EXTERNAL FIELDS

1983 ◽  
Vol 44 (C7) ◽  
pp. C7-193-C7-208 ◽  
Author(s):  
F. Penent ◽  
C. Chardonnet ◽  
D. Delande ◽  
F. Biraben ◽  
J. C. Gay
Keyword(s):  
Rydberg Atoms ◽  
External Fields ◽  
Ion Detection ◽  
Detection Techniques

Temperature influence on homogeneous instabilities in stationary shear flow of nematic liquid crystal with weak surface anchoring

2010 ◽  
Vol 7 ◽  
pp. 191-201
Author(s):  
I.Sh. Nasibullayev ◽  
O.V. Urina
Keyword(s):  
Liquid Crystal ◽  
Shear Flow ◽  
Nematic Liquid Crystal ◽  
Effect Of Temperature ◽  
External Fields ◽  
Temperature Influence ◽  
Surface Anchoring ◽  
Weak Surface ◽  
Surface Coupling

Plane stationary shear flow of the nematic liquid crystal with weak surface anchoring is investigated. The effect of temperature, external fields, and the nature of the surface coupling on the formation of orientation instabilities is investigated.

scholarly journals Real and imaginary mass generation in the presence of external fields and axions

2003 ◽  
Vol 2003 (09) ◽  
pp. 044-044
Author(s):  
Eduardo I Guendelman ◽  
Stefano Ansoldi ◽  
Euro Spallucci
Keyword(s):  
External Fields ◽  
Mass Generation

scholarly journals 2, 12, 117, 1959, 45171, 1170086, …: a Hilbert series for the QCD chiral Lagrangian

2021 ◽  
Vol 2021 (1) ◽  
Author(s):  
Lukáš Gráf ◽  
Brian Henning ◽  
Xiaochuan Lu ◽  
Tom Melia ◽  
Hitoshi Murayama
Keyword(s):  
Hilbert Series ◽  
Charge Conjugation ◽  
External Fields ◽  
Dynkin Diagrams ◽  
Non Linear ◽  
Very High ◽  
Chiral Lagrangian

Abstract We apply Hilbert series techniques to the enumeration of operators in the mesonic QCD chiral Lagrangian. Existing Hilbert series technologies for non-linear realizations are extended to incorporate the external fields. The action of charge conjugation is addressed by folding the $$ \mathfrak{su}(n) $$ su n Dynkin diagrams, which we detail in an appendix that can be read separately as it has potential broader applications. New results include the enumeration of anomalous operators appearing in the chiral Lagrangian at order p8, as well as enumeration of CP-even, CP-odd, C-odd, and P-odd terms beginning from order p6. The method is extendable to very high orders, and we present results up to order p16.(The title sequence is the number of independent C-even and P-even operators in the mesonic QCD chiral Lagrangian with three light flavors of quarks, at chiral dimensions p2, p4, p6, …)

scholarly journals Giant conductivity of mobile non-oxide domain walls

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
S. Ghara ◽  
K. Geirhos ◽  
L. Kuerten ◽  
P. Lunkenheimer ◽  
V. Tsurkan ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Domain Wall ◽  
Domain Walls ◽  
Building Blocks ◽  
External Fields ◽  
Tail Domain ◽  
Oxide Electronics ◽  
Domain Wall Mobility ◽  
Conductance Changes ◽  
Wall Mobility

AbstractAtomically sharp domain walls in ferroelectrics are considered as an ideal platform to realize easy-to-reconfigure nanoelectronic building blocks, created, manipulated and erased by external fields. However, conductive domain walls have been exclusively observed in oxides, where domain wall mobility and conductivity is largely influenced by stoichiometry and defects. Here, we report on giant conductivity of domain walls in the non-oxide ferroelectric GaV4S8. We observe conductive domain walls forming in zig-zagging structures, that are composed of head-to-head and tail-to-tail domain wall segments alternating on the nanoscale. Remarkably, both types of segments possess high conductivity, unimaginable in oxide ferroelectrics. These effectively 2D domain walls, dominating the 3D conductance, can be mobilized by magnetic fields, triggering abrupt conductance changes as large as eight orders of magnitude. These unique properties demonstrate that non-oxide ferroelectrics can be the source of novel phenomena beyond the realm of oxide electronics.

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