Silicon nitridation mechanism in reaction‐bonded Si 3 N 4 –SiC and Si 3 N 4 ‐bonded ferrosilicon nitride

2018 ◽  
Vol 101 (9) ◽  
pp. 4350-4356 ◽  
Author(s):  
Menglong Long ◽  
Yong Li ◽  
Xiuming Jin ◽  
Guisheng Yao ◽  
Jialin Sun ◽  
...  
Keyword(s):  
Silicon Nitridation

Enhancement of silicon nitridation by alkali metals

1988 ◽  
Vol 6 (3) ◽  
pp. 1535-1538 ◽  
Author(s):  
P. Soukiassian ◽  
M. H. Bakshi ◽  
H. I. Starnberg ◽  
Z. Hurych ◽  
T. M. Gentle ◽  
...  
Keyword(s):  
Alkali Metals ◽  
Silicon Nitridation

Reaction Mechanism of SrSi2O2N2:Eu2+ Phosphor Prepared by a Direct Silicon Nitridation Method

2010 ◽  
Vol 94 (1) ◽  
pp. 164-171 ◽  
Author(s):  
Xiufang Yang ◽  
Haoliang Song ◽  
Lixun Yang ◽  
Xin Xu
Keyword(s):  
Reaction Mechanism ◽  
Silicon Nitridation

Silicon nitridation at different nitrogen pressures

2013 ◽  
Vol 69 (9-10) ◽  
pp. 324-329 ◽  
Author(s):  
E. B. Bendovskii
Keyword(s):  
Silicon Nitridation

(Rapid) Thermal Nitridation of SiO2 films

1989 ◽  
Vol 146 ◽  
Author(s):  
J.B. Oude Elferink ◽  
F.H.P.M. Habraken ◽  
W.F. van der Weg
Keyword(s):  
Activation Energy ◽  
Silicon Dioxide ◽  
Effective Activation Energy ◽  
Effective Activation ◽  
Nitrogen Incorporation ◽  
Nitridation Process ◽  
Initial Stage ◽  
Thermal Nitridation ◽  
Silicon Nitridation

ABSTRACTIn this paper we report on the composition of thermally nitrided silicon dioxide films on silicon. Nitridation temperatures ranging from 950 to 1150ºC and nitridation times ranging from 10 to 240 s were used. The purpose of this study is to reveal the mechanisms involved in the nitridation process with emphasis on the role of hydrogen. From the temperature dependence of the amount of nitrogen in the films the effective activation energy for nitrogen incorporation in this initial stage was deduced.

scholarly journals ON THE MECHANISM OF SILICON NITRIDATION IN THE PRESENCE OF ZrO2

1986 ◽  
Vol 47 (C1) ◽  
pp. C1-515-C1-519
Author(s):  
K. RUNDGREN ◽  
R. POMPE
Keyword(s):  
Silicon Nitridation

scholarly journals The effects of Fe and NH4Cl on silicon nitridation

2020 ◽  
Author(s):  
X.M. Yi ◽  
Senjing Zhang ◽  
Weijun Zhu ◽  
Qingda Li ◽  
Wenjie Zhang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Heat Dissipation ◽  
Electronic Devices ◽  
Phase Content ◽  
Vapor Liquid Solid ◽  
Α Phase ◽  
Fe Powder ◽  
Powder Content ◽  
Floating Particles ◽  
Silicon Nitridation

Abstract Silicon nitride (Si3N4) with a high α-phase content is in demand due to its higher thermal conductivity for use in heat dissipation bases for electronic devices. However, more needs to be understood about its fibrous growth, therefore, rich fibrous morphologies were synthesized with the assistance of Fe powder and NH4Cl. The effects of these additives on the phase content and fiber morphologies of the products were investigated The results illustrate that the Si3N4 products possess upper and lower layers and that when the Fe powder content is 4 wt% and NH4Cl content is 5 wt%, the Si3N4 fibers have smooth surfaces, uniform diameters, and no floating particles. Moreover, the maximum α-Si3N4 content reached 94.8 wt%, demonstrating an increase in this phase. The double mechanisms of vapor-liquid-solid and vapor-solid are presented as the growth mechanism at the fiber.

Quantitative kinetic analysis of silicon nitridation

1993 ◽  
Vol 28 (11) ◽  
pp. 2999-3013 ◽  
Author(s):  
R. G. Pigeon ◽  
A. Varma
Keyword(s):  
Kinetic Analysis ◽  
Silicon Nitridation
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