Role of Nd3+ ions on the nucleation and growth of PbS quantum dots (QDs) in silicate glasses

2017 ◽  
Vol 100 (7) ◽  
pp. 2879-2884 ◽  
Author(s):  
Won Ji Park ◽  
Min Gyu Kim ◽  
Ju Eun Kim ◽  
Jing Wang ◽  
Ho Jeong Lee ◽  
...  
2015 ◽  
Vol 1780 ◽  
Author(s):  
Ioannis Lignos ◽  
Stavros Stavrakis ◽  
Ardita Kilaj ◽  
Andrew deMello

ABSTRACTWe report a novel approach for the on-line characterization of nucleation and growth kinetics of lead sulfide (PbS) quantum dots using droplet-based microfluidics. Monodisperse NIR-emitting PbS with optical bandgap between 680 to 1200 nm can be formed rapidly using two reaction schemes at different operating temperatures between 70 and 130°C and the temporal evolution of the absorption and fluorescence spectra are monitored in real-time using a microfluidic platform with an on-line absorption and fluorescence optical system. Therefore, this microfluidic platform is able to provide quantitative information on a millisecond (ms) time frame regarding the size, size distribution, concentration and emission characteristics of the generated nuclei and particles. To our knowledge, this represents the first microfluidic approach for the study of the nucleation and growth in high-temperature colloidal crystallization using in-situ absorption and photoluminescence spectroscopy.


1996 ◽  
Vol 426 ◽  
Author(s):  
R. Könenkamp ◽  
P. Hoyer

AbstractWe report on the preparation and characterization of semiconductor devices based on porous nano-crystalline TiO2 films. We present experimental results on photoconduction to elucidate the role of trap states in this material. We then analyse the behavior of a SnO2/TiO2/Pt Schottkydiode and finally present spectral photoresponse data obtained on a hetero-junction between TiO2 films and PbS quantum dots. We find that the porous films hold some promise for electronic applications, in which fast reponse times are not required.


2012 ◽  
Vol 85 (11) ◽  
Author(s):  
Abdoulghafar Omari ◽  
Iwan Moreels ◽  
Francesco Masia ◽  
Wolfgang Langbein ◽  
Paola Borri ◽  
...  

2009 ◽  
Vol 1208 ◽  
Author(s):  
Eric G. Barbagiovanni ◽  
Lyudmila V Goncharova ◽  
Peter J Simpson ◽  
Nathan Armstrong

AbstractWe studied photoluminescent properties and luminescent decay dynamics in Si quantum dots (QDs) produced by Si implantation in SiO2, and their modification by the application of an implantation mask. Silicon quantum dots were prepared by ion implantation, followed by high temperature annealing leading to nanocrystal nucleation and growth. The mask was prepared by spin-coating silica microspheres to achieve laterally-selective implantation, to control QD size and separation. Transmission electron microscopy (TEM) images were obtained to verify the diameter of the quantum dots. We observe a noticeable peak shift and narrowing in the photoluminescence spectra with the application of the implantation mask. Observed maxima in the photoluminescence spectra are compared with a quantum field theoretical model using an infinite confining 1D potential for Si quantum dots. We comment on the role of excitation transfer by observing a change in the dispersion exponent of the luminescent decay dynamics due to the mask.


2020 ◽  
Author(s):  
Iván Mora-Seró ◽  
Sofia Masi ◽  
David Macias-Pinilla ◽  
Carlos Echeverría-Arrondo ◽  
Juan Ignacio Climente

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