The Role of Infiltration Temperature in the Reaction Bonding of Boron Carbide by Silicon Infiltration

2014 ◽  
Vol 97 (10) ◽  
pp. 3286-3293 ◽  
Author(s):  
Cuiping Zhang ◽  
Hongqiang Ru ◽  
Wei Wang ◽  
Xinyan Yue ◽  
Jing Zhao
Keyword(s):  
Boron Carbide ◽  
Reaction Bonding ◽  
Infiltration Temperature

Contriving and Assessment of Magnesium Alloy Composites Augmented with Boron Carbide VIA Liquid Metallurgy Route

2022 ◽  
Vol 1048 ◽  
pp. 3-8
Author(s):  
J. Allen Jeffrey ◽  
S. Suresh Kumar ◽  
V. Anusha Roseline ◽  
A. Lazar Mary ◽  
D. Santhosh
Keyword(s):  
Boron Carbide ◽  
Testing Machine ◽  
High Strength ◽  
Stir Casting ◽  
Vital Role ◽  
Magnesium Metal ◽  
Hardness Tester ◽  
Universal Testing ◽  
Modern Engineering

In modern engineering low-density composites plays a vital role of which magnesium alloys are very effective due to its high strength with better corrosion resistance and neat cast ability. In this work a micron sized Boron carbide ceramic (B4C) of about 100 microns is diffused as a reinforcement with AZ91 for preparing a magnesium metal matrix composite (MMMC) through stir casting route. A modified pit furnace setup is used for doing stir casting with varying volume fractions of 0％ and 3% of boron carbide for doing the composites. Furthermore mechanical and metallurgical properties like Tensile test is made through universal testing machine, Micro-hardness through Vickers hardness tester and Micro structure through Optical Microscopy is done for investigation.

The role of free carbon in the transport and magnetic properties of boron carbide

1984 ◽  
Vol 45 (2) ◽  
pp. 207-214 ◽  
Author(s):  
A.K. Bandyopadhyay ◽  
F. Beuneu ◽  
L. Zuppiroli ◽  
M. Beauvy
Keyword(s):  
Magnetic Properties ◽  
Boron Carbide ◽  
Free Carbon

The Role of Inclusions in the Failure of Boron Carbide Subjected to Impact Loading

2019 ◽  
Author(s):  
Andrew L. Tonge ◽  
Brian E. Schuster
Keyword(s):  
Boron Carbide ◽  
Impact Loading ◽  
Inelastic Deformation ◽  
Flyer Plate ◽  
Plate Impact ◽  
Simple Loading ◽  
Early Stages ◽  
Experimental Geometry

Abstract This work investigates the importance of the microstructure of boron carbide for initiating inelastic deformation under impact conditions. Simple loading resulting from a flyer plate impact geometry is used to illustrate the importance of microstructure for the well-controlled and easily instrumented experimental geometry. A second set of simulations is performed on a miniaturized impact geometry to investigate the importance of the microstructure for the early stages of semi-infinite penetration for impact velocities between 0.9 km/s and 1.9 km/s. The effect of the microstructure is more pronounced for the flyer plate impact geometry.

scholarly journals Role of generated free radicals in synthesis of amorphous hydrogenated boron carbide from orthocarborane using argon bombardment: a ReaxFF molecular dynamics study

2020 ◽  
Vol 6 (12) ◽  
pp. 126461
Author(s):  
Nirmal Baishnab ◽  
Rajan Khadka ◽  
Michelle M Paquette ◽  
Paul Rulis ◽  
Nathan A Oyler ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Free Radicals ◽  
Boron Carbide ◽  
Amorphous Hydrogenated Boron Carbide

Role of intericosahedral chains on the hardness of sputtered boron carbide films

2004 ◽  
Vol 84 (21) ◽  
pp. 4173-4175 ◽  
Author(s):  
L. G. Jacobsohn ◽  
R. D. Averitt ◽  
C. J. Wetteland ◽  
R. K. Schulze ◽  
M. Nastasi ◽  
...  
Keyword(s):  
Boron Carbide

The Band Offsets of Isomeric Boron Carbide Overlayers

2004 ◽  
Vol 836 ◽  
Author(s):  
A. N. Caruso ◽  
P. Lunca-Popa ◽  
Y. B. Losovyj ◽  
A. S. Gunn ◽  
J. I. Brand
Keyword(s):  
Boron Carbide ◽  
Single Layer ◽  
Surface Photovoltage ◽  
Trap Charge ◽  
Band Offsets ◽  
Gap States ◽  
Photoemission Experiment

ABSTRACTSemiconducting boron carbide overlayers, formed from the decomposition of orthocarborane and metacarborane have been studied by angle resolved photoemission. The incurrence of surface photovoltage and the photovoltaic process, from the photoemission experiment, reveal band offsets in the orthocarborane multilayer configurations that are invereted relative to single layer configurations. Defect induced gap states which trap charge at the heterostructure interface is used as one explanation of these results. The role of defects is also used to help illuminate why opposite semiconducting type materials are formed from the decomposition of isomer carborane molecules.

The role of Si3N4 additions in the reaction bonding of silicon compacts

1984 ◽  
Vol 3 (2) ◽  
pp. 112-116 ◽  
Author(s):  
O. J. Gregory ◽  
M. H. Richman
Keyword(s):  
Reaction Bonding
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