Temperature-Dependent Phase Transitions in the Lead-Free Piezoceramics (1 - x  - y )(Bi1/2 Na1/2 )TiO3 -xBaTiO3 -y (K0.5 Na0.5 )NbO3 Observed by in situ Transmission Electron Microscopy and Dielectric Measurements

2013 ◽  
Vol 96 (10) ◽  
pp. 3312-3324 ◽  
Author(s):  
Jens Kling ◽  
Wook Jo ◽  
Robert Dittmer ◽  
Silke Schaab ◽  
Hans-Joachim Kleebe
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Phase Transitions ◽  
Lead Free ◽  
Dielectric Measurements ◽  
Temperature Dependent ◽  
Transmission Electron

scholarly journals In Situ Investigations on Stress and Microstructure Evolution in Polycrystalline Ti(C,N)/α-Al2O3 CVD Coatings under Thermal Cycling Loads

Crystals ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 158
Author(s):  
José García ◽  
Maiara Moreno ◽  
Wei Wan ◽  
Daniel Apel ◽  
Haroldo Pinto ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thermal Cycling ◽  
Microstructure Evolution ◽  
Temperature Dependent ◽  
Alumina Layer ◽  
Stress Behavior ◽  
Transmission Electron ◽  
Α Al2o3

The stress behavior and the associated microstructure evolution of industrial Ti(C,N)/α-Al2O3 coatings subjected to thermal cycling are investigated by in situ energy dispersive synchrotron X-ray diffraction and transmission electron microscopy. Temperature-dependent stresses and changes in microstructural parameters (domain size and microstrain) are analyzed by in situ measurements at different temperatures between 25 and 800 °C, both in the heating up and cooling down step, including several thermal cycles. Transmission electron microscopy is used to evaluate defects before and after the thermal treatment. The introduction of high compressive stresses in α-Al2O3 by top-blasting is connected to a high defect density at the basal planes of the alumina layer. The stress relaxation of the alumina layer at high temperatures is associated with a successive annihilation of defects until a reversible temperature-dependent stress condition is set. Top-blasting does not change the initial microstructure and residual stress of the Ti(C,N) layer. Ti(C,N) shows a cyclic stress behavior associated with the heat treatment and an elastic deformation behavior in the temperature range investigated.

Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

Transmission Electron Microscopy of Epitaxial silicides grown by ultra high vacuum deposition

1989 ◽  
Vol 47 ◽  
pp. 462-463
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Transmission Electron

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.

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