scholarly journals Thresholds, sensitive stages and genetic variability of finger millet to high temperature stress

2018 ◽  
Vol 204 (5) ◽  
pp. 477-492 ◽  
Author(s):  
R. A. Opole ◽  
P. V. V. Prasad ◽  
M. Djanaguiraman ◽  
K. Vimala ◽  
M. B. Kirkham ◽  
...  
2018 ◽  
Vol 5 (02) ◽  
Author(s):  
Sonam Singh1 ◽  
Suphiya Khan ◽  
Jasdeep C. Padaria ◽  
Amolkumar U. Solanke

Under changing climatic conditions, high temperature stress is the most severe problem for the whole agriculture. Identification and utilization of crop plants which can sustain and yield better under high temperature conditions is need of the day. In this study, we established finger millet as thermotolerant crop. For this, we characterized thermotolerant cotton, thermosensitive wheat along with finger millet by MDA accumulation after heat stress and shown that finger millet is even better than cotton. Further, using seed germination test and growing seedlings at higher temperature, it was observed thatfinger millet was least affected at 42 oCwhereas germination percent and fresh weight reduced at 47 oC. With biochemical assay, it was shown that finger millet had very less difference at 42 oC as compared to 37 oC, however there is significant reduction at 47 oC in chlorophyll and carotenoid content and relative water content (RWC) percent whereas increase in electrolyte leakage (%) and H2O2 and O2 concentration. Still finger millet plants can tolerate temperature of 47 oC.Overall, the present study strongly identified finger millet as thermotolerant crop and can be utilized for allele mining of known genes and prospecting of novel genes for crop improvement for high temperature stress.


2020 ◽  
Vol 53 (2) ◽  
Author(s):  
Khalil Ahmed Laghari ◽  
Abdul Jabbar Pirzada ◽  
Mahboob Ali Sial ◽  
Muhammad Athar Khan ◽  
Jamal Uddin Mangi

2020 ◽  
Vol 52 (5) ◽  
Author(s):  
De-Gong Wu ◽  
Qiu-Wen Zhan ◽  
Hai-Bing Yu ◽  
Bao-Hong Huang ◽  
Xin-Xin Cheng ◽  
...  

Author(s):  
D-J Kim ◽  
I-G Kim ◽  
J-Y Noh ◽  
H-J Lee ◽  
S-H Park ◽  
...  

Abstract As DRAM technology extends into 12-inch diameter wafer processing, plasma-induced wafer charging is a serious problem in DRAM volume manufacture. There are currently no comprehensive reports on the potential impact of plasma damage on high density DRAM reliability. In this paper, the possible effects of floating potential at the source/drain junction of cell transistor during high-field charge injection are reported, and regarded as high-priority issues to further understand charging damage during the metal pad etching. The degradation of block edge dynamic retention time during high temperature stress, not consistent with typical reliability degradation model, is analyzed. Additionally, in order to meet the satisfactory reliability level in volume manufacture of high density DRAM technology, the paper provides the guidelines with respect to plasma damage. Unlike conventional model as gate antenna effect, the cell junction damage by the exposure of dummy BL pad to plasma, was revealed as root cause.


2020 ◽  
Vol 16 (2) ◽  
pp. 18-23
Author(s):  
K. PRAVALLIKA ◽  
C. ARUNKUMAR ◽  
A. VIJAYKUMAR ◽  
R. BEENA ◽  
V. G. JAYALEKSHMI

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