scholarly journals Effects of tempering and heat strengthening on hardness, indentation fracture resistance, and wear of soda lime float glass

2019 ◽  
Vol 10 (4) ◽  
pp. 431-440 ◽  
Author(s):  
Nisha Sheth ◽  
Alexandra Howzen ◽  
Alexander Campbell ◽  
Sarah Spengler ◽  
Hongshen Liu ◽  
...  
Keyword(s):  
Fracture Resistance ◽  
Soda Lime ◽  
Float Glass ◽  
Indentation Fracture

The Indentation Fracture Resistance of Self–Reinforced Mullites

1992 ◽  
pp. 119-133 ◽  
Author(s):  
Tatsuo Sakai ◽  
Asish Ghosh ◽  
Richard C. Bradt
Keyword(s):  
Fracture Resistance ◽  
Indentation Fracture

H2O speciation in float glass and soda lime silica glass

2006 ◽  
Vol 229 (1-3) ◽  
pp. 64-77 ◽  
Author(s):  
A. Stuke ◽  
H. Behrens ◽  
B.C. Schmidt ◽  
R. Dupree
Keyword(s):  
Silica Glass ◽  
Soda Lime ◽  
Float Glass ◽  
Soda Lime Silica Glass

Precise XPS depth profile of soda–lime–silica float glass using C60 ion beam

2011 ◽  
Vol 33 (12) ◽  
pp. 1927-1930 ◽  
Author(s):  
Yuichi Yamamoto ◽  
Kiyoshi Yamamoto
Keyword(s):  
Depth Profile ◽  
Ion Beam ◽  
Soda Lime ◽  
Float Glass ◽  
Xps Depth Profile

Optical and Electrical Properties of Transparent Conduction ITO Films Prepared by Dip-Coating Process

2006 ◽  
Vol 11-12 ◽  
pp. 171-174
Author(s):  
Sheng Jie Piao ◽  
Jia Xiang Liu ◽  
Nan Zhang
Keyword(s):  
Sheet Resistance ◽  
Soda Lime ◽  
Heat Treating ◽  
Dip Coating ◽  
Float Glass ◽  
X Ray Diffraction ◽  
Ito Film ◽  
Dip Coating Technique ◽  
Resistance Value ◽  
Ito Films

Transparent conductive ITO films were fabricated on soda lime float glass substrate by colloid dip-coating technique from indium metal ingots and hydrous tin(IV) chloride. It was systematically studied that the effect of the electrical, the structure and optical properties of the ITO doped Sn in quantitative change and different heat-treating process by XRD, UV-VIS spectrophotometer and four-probe instrument. The results indicated that only cubic In2O3 phase was observed from the X-ray diffraction; with the amount of doped Snincreasing, the sheet resistance of ITO was up to minimumand thenincreased. The sheet resistance value decreased with the increase of the annealing temperature and holding time; the transmissivity of the ITO films was higher than 80% in 550 nm wavelength. The lowest sheet resistance value of ITO film which was 300nm thick was 153 ohms per square, which wasannealed at 600°C for 1h and doped Sn 10% (wt).

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