Progress Toward Improved Device Performance in Large-Area Cu(In,Ga)Se2 Thin Film Solar Cells

Author(s):  
Jehad AbuShama ◽  
John Wax ◽  
Troy Berens ◽  
John Tuttle
2007 ◽  
Vol 515 (15) ◽  
pp. 5792-5797 ◽  
Author(s):  
Lianghuan Feng ◽  
Lili Wu ◽  
Zhi Lei ◽  
Wei Li ◽  
Yaping Cai ◽  
...  

2021 ◽  
Author(s):  
Adam B. Phillips ◽  
Ramez Hosseinian Ahangharnejhad ◽  
Kamala Khanal Subedi ◽  
Manoj K. Jamarkattel ◽  
Dipendra Pokhrel ◽  
...  

2012 ◽  
Vol 15 ◽  
pp. 258-264 ◽  
Author(s):  
H. Hidayat ◽  
P.I. Widenborg ◽  
A.G. Aberle

2022 ◽  
Vol 8 ◽  
Author(s):  
Aimei Zhao ◽  
Yanping Wang ◽  
Bing Li ◽  
Dongmei Xiang ◽  
Zhuo Peng ◽  
...  

CuSbS2, as a direct bandgap semiconductor, is a promising candidate for fabricating flexible thin-film solar cells due to its low grain growth temperature (300°C–450°C). Uniform and highly crystalline CuSbS2 thin films are crucial to improving device performance. However, uniform CuSbS2 is difficult to obtain during electrodeposition and post-sulfurization due to the “dendritic” deposition of Cu on Mo substrates. In this study, Sb/Cu layers were sequentially pulse electrodeposited on Mo substrates. By adjusting the pulse parameters, smooth and uniform Sb layers were prepared on Mo, and a flat Cu layer was obtained on Sb without any dendritic clusters. A two-step annealing process was employed to fabricate CuSbS2 thin films. The effects of temperature on phases and morphologies were investigated. CuSbS2 thin films with good crystallinity were obtained at 360°C. As the annealing temperature increased, the crystallinity of the films decreased. The CuSbS2 phase transformed into a Cu3SbS4 phase with the temperature increase to 400°C. Finally, a 0.90% efficient solar cell was obtained using the CuSbS2 thin films annealed at 360°C.


Author(s):  
T. J. Cumberbatch ◽  
I. D. Mclnally ◽  
E. W. Williams ◽  
D. J. Gibbons ◽  
M. Claybourn ◽  
...  

MRS Bulletin ◽  
1993 ◽  
Vol 18 (10) ◽  
pp. 45-47 ◽  
Author(s):  
T. Suntola

Cadmium telluride is currently the most promising material for high efficiency, low-cost thin-film solar cells. Cadmium telluride is a compound semiconductor with an ideal 1.45 eV bandgap for direct light-to-electricity conversion. The light absorption coefficient of CdTe is high enough to make a one-micrometer-thick layer of material absorb over 99% of the visible light. Processing homogenous polycrystalline thin films seems to be less critical for CdTe than for many other compound semiconductors. The best small-area CdTe thin-film cells manufactured show more than 15% conversion efficiency. Large-area modules with aperture efficiencies in excess of 10% have also been demonstrated. The long-term stability of CdTe solar cell structures is not known in detail or in the necessary time span. Indication of good stability has been demonstrated. One of the concerns about CdTe solar cells is the presence of cadmium which is an environmentally hazardous material.


2015 ◽  
Vol 24 (1) ◽  
pp. 38-51 ◽  
Author(s):  
Laura Vauche ◽  
Lisa Risch ◽  
Yudania Sánchez ◽  
Mirjana Dimitrievska ◽  
Marcel Pasquinelli ◽  
...  

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