Effect of Localized Inhomogenity of Shunt Resistance on the Spectral Response and Dark I-V Characteristics of Silicon Solar Cell

2006 ◽  
Author(s):  
Priyanka ◽  
M. Lal ◽  
S.N. Singh
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Spectral Response ◽  
Shunt Resistance

CdSe/CdS Quantum Dot Core-Shell for Silicon Solar Cell Efficiency Enhancement

2020 ◽  
Vol 29 ◽  
pp. 8-14
Author(s):  
Manal Midhat Abdullah ◽  
Omar Adnan Ibrahim
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Energy Gap ◽  
Spectral Response ◽  
Solar Spectrum ◽  
Core Shell ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Electron Hole Pair ◽  
Pair Generation

Core-shell nanocrystals are utilized to improve vitality conversion efficiency of Si based solar cells. In the present work, a study of synthesis and characterization of photo luminescent, down-shifting, core-shell CdSe/CdS quantum dots is introduced. The QD,s absorb in the UV range (350nm) of the solar spectrum and emit photons with wavelengths centered at (574 nm). Calculated energy gap is (2.16 eV), which is well suited for Silicon absorption and electron-hole pair generation. The grain size is ranged between (1.814 and 3.456 nm). Results show that the cell efficiency is improved from (8.81%) (For a reference silicon solar cell) to (10.07%) (For a CdSe/CdS QD deposited directly on the surface of the solar cell). This improvement is referred to the spreading of the absorbed solar radiation over the spectral response of the Si solar cell.

Influence of Transparent Conducting Oxide on Amorphous Silicon Solar Cell Performance

1986 ◽  
Vol 70 ◽  
Author(s):  
Chris Walker ◽  
Russell Hollingsworth ◽  
Joe del Cueto ◽  
Arun Madan
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Spectral Response ◽  
Transparent Conducting Oxide ◽  
Electrical Contacts ◽  
Cell Performance ◽  
Solar Cell Performance ◽  
Conducting Oxides ◽  
Amorphous Silicon Solar Cell ◽  
Transparent Conducting

The use of transparent conducting oxides (TCO) as electrical contacts in a-Si:H solar cells has stimulated interest in the multitude of effects that these layers have on a-Si:H solar cell performance. The study of a-Si:H p-i-n junctions using a TCO contact involves many factors such as, interdiffusion, transmission, reflection, and resistivity. In this paper, we attempt to distinguish between these factors through the role they play in determining the solar cell device performance. Devices were characterized via dark and illuminated current vs. voltage (I-V) measurements, and spectral response. It was found that the properties of the TCO have an important role in influencing FF and Jsc in the devices.

Sign in / Sign up

Export Citation Format

Share Document