scholarly journals Fabrication of Multi-layer Self-assembled InAs Quantum Dots for High-Efficiency Solar Cells

2006 ◽  
Author(s):  
Ryuji Oshima ◽  
Hiroyuki Komiyama ◽  
Takayuki Hashimoto ◽  
Hidemi Shigekawa ◽  
Yoshitaka Okada
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
High Efficiency ◽  
Inas Quantum Dots ◽  
High Efficiency Solar Cells ◽  
Self Assembled

Effects of insertion of strain-engineering Ga(In)NAs layers on optical properties of InAs/GaAs quantum dots for high-efficiency solar cells

2016 ◽  
Vol 52 ◽  
pp. 177-180 ◽  
Author(s):  
Emil-Mihai Pavelescu ◽  
Ville Polojärvi ◽  
Andreas Schramm ◽  
Antti Tukiainen ◽  
Arto Aho ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Solar Cells ◽  
High Efficiency ◽  
Strain Engineering ◽  
High Efficiency Solar Cells

Ultra-high stacks of InGaAs quantum dots for high efficiency solar cells

2011 ◽  
Author(s):  
Takeyoshi Sugaya ◽  
Osamu Numakami ◽  
Shigenori Furue ◽  
Hironori Komaki ◽  
Takeru Amano ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
High Efficiency ◽  
High Efficiency Solar Cells

scholarly journals Two-step photon up-conversion solar cells

2017 ◽  
Vol 8 (1) ◽  
Author(s):  
Shigeo Asahi ◽  
Haruyuki Teranishi ◽  
Kazuki Kusaki ◽  
Toshiyuki Kaizu ◽  
Takashi Kita
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Energy Conversion ◽  
Conversion Efficiency ◽  
High Efficiency ◽  
Transmission Loss ◽  
Energy Conversion Efficiency ◽  
High Potential ◽  
Next Generation ◽  
Inas Quantum Dots

Abstract Reducing the transmission loss for below-gap photons is a straightforward way to break the limit of the energy-conversion efficiency of solar cells (SCs). The up-conversion of below-gap photons is very promising for generating additional photocurrent. Here we propose a two-step photon up-conversion SC with a hetero-interface comprising different bandgaps of Al0.3Ga0.7As and GaAs. The below-gap photons for Al0.3Ga0.7As excite GaAs and generate electrons at the hetero-interface. The accumulated electrons at the hetero-interface are pumped upwards into the Al0.3Ga0.7As barrier by below-gap photons for GaAs. Efficient two-step photon up-conversion is achieved by introducing InAs quantum dots at the hetero-interface. We observe not only a dramatic increase in the additional photocurrent, which exceeds the reported values by approximately two orders of magnitude, but also an increase in the photovoltage. These results suggest that the two-step photon up-conversion SC has a high potential for implementation in the next-generation high-efficiency SCs.

Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells

2008 ◽  
Vol 93 (8) ◽  
pp. 083111 ◽  
Author(s):  
Ryuji Oshima ◽  
Ayami Takata ◽  
Yoshitaka Okada
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
High Efficiency ◽  
High Efficiency Solar Cells

High efficiency solar cells tailored using biomass-converted graded carbon quantum dots

Nanoscale ◽  
2019 ◽  
Vol 11 (32) ◽  
pp. 15083-15090 ◽  
Author(s):  
Liming Liu ◽  
Xueping Yu ◽  
Zichuan Yi ◽  
Feng Chi ◽  
Honghang Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
High Efficiency ◽  
Energy Levels ◽  
Carbon Quantum Dots ◽  
High Efficiency Solar Cells

The photovoltaic performances of solar cells have been significantly improved by incorporating biomass-converted carbon quantum dots with graded energy levels into sensitized devices.

Ultra-high stacks of InGaAs/GaAs quantum dots for high efficiency solar cells

2012 ◽  
Vol 5 (3) ◽  
pp. 6233 ◽  
Author(s):  
Takeyoshi Sugaya ◽  
Osamu Numakami ◽  
Ryuji Oshima ◽  
Shigenori Furue ◽  
Hironori Komaki ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
High Efficiency ◽  
High Efficiency Solar Cells

Quasi-quantum dot-induced stabilization of α-CsPbI3 perovskite for high-efficiency solar cells

2020 ◽  
Vol 8 (20) ◽  
pp. 10226-10232 ◽  
Author(s):  
Cheng Liu ◽  
Yi Yang ◽  
Xin Liu ◽  
Yong Ding ◽  
Zulqarnain Arain ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
Gibbs Energy ◽  
High Efficiency ◽  
Ambient Condition ◽  
High Efficiency Solar Cells ◽  
Surface Gibbs Energy

Quasi-quantum dots α-CsPbI3 films are in situ prepared by using a new ligand with ultralow contents. By increasing the film hydrophobicity and surface Gibbs energy, the device with efficiency of 13.5% keeps stable under ambient condition for 30 days.

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