Dual Metal Gates with Band-Edge Work Functions on Novel HfLaO High-K Gate Dielectric

2006 ◽  
Author(s):  
X. Wang ◽  
C. Shen ◽  
M.-F. Li ◽  
H. Yu ◽  
Y. Sun ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Band Edge ◽  
Metal Gates ◽  
High K ◽  
Work Functions ◽  
Dual Metal ◽  
High K Gate Dielectric

High-k Dielectrics and Dual Metal Gates: Integration Issues for New CMOS Materials

1999 ◽  
Vol 567 ◽  
Author(s):  
B. Claflin ◽  
K. Flock ◽  
G. Lucovsky
Keyword(s):  
Oxide Semiconductor ◽  
Metal Nitrides ◽  
Mos Capacitors ◽  
Gate Electrodes ◽  
Metal Gates ◽  
High K ◽  
Dielectric Interfaces ◽  
Work Functions ◽  
Dual Metal ◽  
Cv Measurements

ABSTRACTSeveral metal and conducting metal nitride candidates were investigated for alternative gate electrode applications in future complimentary metal-oxide-semiconductor (CMOS) devices. High frequency capacitance-voltage (CV) measurements were performed on n-MOS and p-MOS capacitors with Al, Ta, TaN, TIN, or W2N gates and ultra-thin SiO2/Si3N4 dielectric stacks. The work functions of Al and Ta were close to the conduction band of Si as expected while all the metal nitrides had work functions slightly above mid-gap. The thermal stability of the metal nitrides and the metal/dielectric interfaces was studied by Auger electron spectroscopy (AES) following rapid thermal annealing (RTA). Integration requirements for dual metal gate electrodes in future CMOS devices are discussed.

Experimental observations of the thermal stability of high-k gate dielectric materials on silicon

2002 ◽  
Vol 303 (1) ◽  
pp. 54-63 ◽  
Author(s):  
P.S. Lysaght ◽  
P.J. Chen ◽  
R. Bergmann ◽  
T. Messina ◽  
R.W. Murto ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Gate Dielectric ◽  
Dielectric Materials ◽  
High K ◽  
Thermal Stability Of ◽  
High K Gate Dielectric
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