Circuit compatible macromodeling of high-speed VLSI modules characterized by scattering parameters

2006 ◽  
Author(s):  
D. Saraswat ◽  
R. Achar ◽  
M. Nakhla
Keyword(s):  
High Speed ◽  
Scattering Parameters

scholarly journals Plug-and-play transceiver with high gain and ultra low noise figure for IEEE 802.15.4 application

2019 ◽  
Vol 32 (2) ◽  
pp. 231-238
Author(s):  
Josue Lopez-Leyva ◽  
Miguel Ponce-Camacho ◽  
Ariana Talamantes-Alvarez
Keyword(s):  
High Speed ◽  
Ieee 802.15.4 ◽  
Noise Figure ◽  
Impedance Matching ◽  
High Gain ◽  
Low Noise ◽  
Scattering Parameters ◽  
Performance Simulation ◽  
Noise Amplifier ◽  
And Performance

This paper shows the design and performance simulation of a 2.4 GHz plugand- play transceiver based on a high speed switch for IEEE 802.15.4 applications. The electrical design was optimized taking into account the scattering parameters, inputoutput impedance matching and minimum trace width. The simulation results show an important performance regarding the Noise Figure (0.38 dB) and gain (21 dB) at particular temperature for reception mode, transmission scattering parameters (S12 and S21) and reflection scattering parameters (all the rest parameters) for both mode operation (Power Amplifier and Low Noise Amplifier).

Mixed-Port Hybrid Parameters for High-Speed Differential Lines

2018 ◽  
Vol 2018 (1) ◽  
pp. 000380-000383
Author(s):  
A. Ege Engin ◽  
Ivan Ndip ◽  
Klaus-Dieter Lang ◽  
Jerry Aguirre
Keyword(s):  
Transmission Lines ◽  
Mixed Mode ◽  
High Speed ◽  
Mode Conversion ◽  
Network Analyzer ◽  
Scattering Parameters ◽  
Coupled Lines ◽  
Tightly Coupled ◽  
Insight Into

Abstract High-speed transmission lines are commonly routed as differential lines to control sensitivity to noise on the reference planes at higher speeds. The preferred method of characterization of differential lines is in terms of mixed-mode scattering parameters, as they provide insight into the behavior of differential and common signals, as well as the mode conversion among them. These mixed-mode scattering parameters can be mathematically obtained from single-ended parameters, which can for example be measured with a 4-port vector network analyzer. There has been recent concerns about the so-obtained mixed-mode scattering parameters, especially for tightly-coupled lines, resulting in extended or modified definitions of mixed-mode scattering parameters. This can be a point of confusion in interpreting the behavior of differential lines. In this paper we introduce the mixed-port hybrid parameters, which do not suffer from any such ambiguous definitions, as they are based on intuitive differential and common-port excitations of the network. As such, mixed-port hybrid parameters can be used to analyze the mixed-mode performance of any arbitrary 4-port network, certainly including coupled or asymmetrical lines, without any ambiguity.

Microfabrication research at the National Submicron Facility

1983 ◽  
Vol 41 ◽  
pp. 86-89
Author(s):  
E.D. Wolf
Keyword(s):  
Integrated Circuits ◽  
Particle Physics ◽  
High Speed ◽  
New Technology ◽  
High Energy ◽  
High Energy Particle ◽  
New Science ◽  
Wide Range ◽  
Intermediate Domain ◽  
Circuit Function

Most microelectronics devices and circuits operate faster, consume less power, execute more functions and cost less per circuit function when the feature-sizes internal to the devices and circuits are made smaller. This is part of the stimulus for the Very High-Speed Integrated Circuits (VHSIC) program. There is also a need for smaller, more sensitive sensors in a wide range of disciplines that includes electrochemistry, neurophysiology and ultra-high pressure solid state research. There is often fundamental new science (and sometimes new technology) to be revealed (and used) when a basic parameter such as size is extended to new dimensions, as is evident at the two extremes of smallness and largeness, high energy particle physics and cosmology, respectively. However, there is also a very important intermediate domain of size that spans from the diameter of a small cluster of atoms up to near one micrometer which may also have just as profound effects on society as “big” physics.

Vacuum System to Minimize the Specimen Contamination of High-Performance EM

1977 ◽  
Vol 35 ◽  
pp. 68-69
Author(s):  
N. Yoshimura ◽  
K. Shirota ◽  
T. Etoh
Keyword(s):  
Electron Microscope ◽  
High Speed ◽  
High Performance ◽  
High Vacuum ◽  
Vacuum System ◽  
Pump System ◽  
Pumping System ◽  
Diffusion Pump ◽  
Almost All ◽  
Cascade Type

One of the most important requirements for a high-performance EM, especially an analytical EM using a fine beam probe, is to prevent specimen contamination by providing a clean high vacuum in the vicinity of the specimen. However, in almost all commercial EMs, the pressure in the vicinity of the specimen under observation is usually more than ten times higher than the pressure measured at the punping line. The EM column inevitably requires the use of greased Viton O-rings for fine movement, and specimens and films need to be exchanged frequently and several attachments may also be exchanged. For these reasons, a high speed pumping system, as well as a clean vacuum system, is now required. A newly developed electron microscope, the JEM-100CX features clean high vacuum in the vicinity of the specimen, realized by the use of a CASCADE type diffusion pump system which has been essentially improved over its predeces- sorD employed on the JEM-100C.

The on-line use of histogram data for high-speed correction and alignment of electron microscope images

1984 ◽  
Vol 42 ◽  
pp. 556-557
Author(s):  
William Krakow
Keyword(s):  
Power Spectrum ◽  
High Speed ◽  
Direct Memory Access ◽  
Digital Television ◽  
Contrast Transfer Function ◽  
The Past ◽  
High Resolution Tem ◽  
On Line ◽  
Correction Of Astigmatism ◽  
The Fourier Transform

In the past few years on-line digital television frame store devices coupled to computers have been employed to attempt to measure the microscope parameters of defocus and astigmatism. The ultimate goal of such tasks is to fully adjust the operating parameters of the microscope and obtain an optimum image for viewing in terms of its information content. The initial approach to this problem, for high resolution TEM imaging, was to obtain the power spectrum from the Fourier transform of an image, find the contrast transfer function oscillation maxima, and subsequently correct the image. This technique requires a fast computer, a direct memory access device and even an array processor to accomplish these tasks on limited size arrays in a few seconds per image. It is not clear that the power spectrum could be used for more than defocus correction since the correction of astigmatism is a formidable problem of pattern recognition.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

An atomic-resolution microscope study of Al contracts on GaAs

1986 ◽  
Vol 44 ◽  
pp. 726-727
Author(s):  
Z. Liliental-Weber ◽  
C. Nelson ◽  
R. Ludeke ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
High Speed ◽  
Schottky Contacts ◽  
Detailed Knowledge ◽  
The Past ◽  
Semiconductor Interfaces ◽  
Deposited Metal ◽  
Microwave Applications ◽  
Free Interfaces ◽  
Potential Use

The properties of metal/semiconductor interfaces have received considerable attention over the past few years, and the Al/GaAs system is of special interest because of its potential use in high-speed logic integrated optics, and microwave applications. For such materials a detailed knowledge of the geometric and electronic structure of the interface is fundamental to an understanding of the electrical properties of the contact. It is well known that the properties of Schottky contacts are established within a few atomic layers of the deposited metal. Therefore surface contamination can play a significant role. A method for fabricating contamination-free interfaces is absolutely necessary for reproducible properties, and molecularbeam epitaxy (MBE) offers such advantages for in-situ metal deposition under UHV conditions

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