Single crystal PZT thin film membrane with highly conductive electrodes

2012 ◽  
Author(s):  
S. Yin ◽  
J. Abergel ◽  
A. Bontempi ◽  
T. Ricart ◽  
G. Le Rhun ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Pzt Thin Film ◽  
Thin Film Membrane

Correlation Improvement Between Theoretical and Experimental Results of PZT Thin-Film Membrane Actuators

2009 ◽  
Author(s):  
Cheng-Chun Lee ◽  
G. Z. Cao ◽  
I. Y. Shen
Keyword(s):  
Thin Film ◽  
Finite Element ◽  
Residual Stresses ◽  
Finite Element Model ◽  
Element Model ◽  
Experimental Results ◽  
Pzt Thin Film ◽  
Thin Film Membrane ◽  
The Finite Element Model ◽  
Membrane Actuators

This paper is to study actuation displacement of a Lead Zirconate Titanate (PbZrxTi1−xO3 or PZT) thin-film membrane actuator via finite element modeling and laser-Doppler measurements. In particular, this paper is to identify possible parameters that could cause discrepancies between the finite element predictions and experimental measurements. A twofold approach is used. First, we conduct additional experiments to measure actuator dimensions, which are subsequently used as input to the finite element model. We also measure natural frequencies of the membrane actuators to compare with the finite element predictions in addition to the actuator displacement. Second, we have conducted a parametric study via the finite element model to identify possible parameters that could cause the discrepancies. Parameters varied include dimensions, material properties, residual stresses and linearity of the PZT thin-film membrane actuator. Simulation results indicate that the residual stresses are the most probable cause of the discrepancy between the theoretical predictions and the experimental results.

Spalling Technology of PZT Thin Film Capacitor using Internal Stress

2014 ◽  
Vol 134 (4) ◽  
pp. 85-89
Author(s):  
Kazutaka Sueshige ◽  
Fumiaki Honda ◽  
Tadatomo Suga ◽  
Masaaki Ichiki ◽  
Toshihiro Itoh
Keyword(s):  
Thin Film ◽  
Internal Stress ◽  
Film Capacitor ◽  
Thin Film Capacitor ◽  
Pzt Thin Film

Piezoelectric PZT thin-film transformers with a ring–dot structure

2020 ◽  
Vol 59 (SP) ◽  
pp. SPPD09
Author(s):  
Sang-Hyo Kweon ◽  
Kazuki Tani ◽  
Kensuke Kanda ◽  
Sahn Nahm ◽  
Isaku Kanno
Keyword(s):  
Thin Film ◽  
Pzt Thin Film

scholarly journals Synthesis of a mesoporous titania thin film with a pseudo-single-crystal framework by liquid-phase epitaxial growth, and enhancement of photocatalytic activity

RSC Advances ◽  
2020 ◽  
Vol 10 (67) ◽  
pp. 40658-40662
Author(s):  
Norihiro Suzuki ◽  
Chiaki Terashima ◽  
Kazuya Nakata ◽  
Ken-ichi Katsumata ◽  
Akira Fujishima
Keyword(s):  
Thin Film ◽  
Photocatalytic Activity ◽  
Liquid Phase ◽  
Single Crystal ◽  
Chemical Process ◽  
Anatase Phase ◽  
Mesoporous Titania ◽  
Titania Thin Film ◽  
Liquid Phase Epitaxial Growth ◽  
Pseudo Single Crystal

An anatase-phase mesoporous titania thin film with a pseudo-single-crystal framework was facilely synthesized by an inexpensive chemical process.

scholarly journals Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Flexible Substrate ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Thin Film

AbstractPower devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (> 1000 °C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer, thereby preventing their applications to compact devices, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (< 1 × 10–4 Ω cm2) and high breakdown voltage VBD (~ 100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

Atomically controlled surfaces with step and terrace of β-Ga2O3 single crystal substrates for thin film growth

2008 ◽  
Vol 254 (23) ◽  
pp. 7838-7842 ◽  
Author(s):  
Shigeo Ohira ◽  
Naoki Arai ◽  
Takayoshi Oshima ◽  
Shizuo Fujita
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Film Growth ◽  
Thin Film Growth

Measurement of d15 Shear-Mode Piezoelectric Response in PZT Thin Film

2009 ◽  
Vol 421-422 ◽  
pp. 95-98
Author(s):  
Tsuyoshi Aoki ◽  
Shigeyoshi Umemiya ◽  
Masaharu Hida ◽  
Kazuaki Kurihara
Keyword(s):  
Thin Film ◽  
Fem Analysis ◽  
Active Part ◽  
Piezoelectric Response ◽  
Small Displacement ◽  
Shear Mode ◽  
Mems Devices ◽  
Pzt Film ◽  
Pzt Thin Film ◽  
Piezoelectric Constants

Piezoelectric films using d15 shear-mode can be applied to many useful MEMS devices. The small displacement derived from the d15 shear-mode was directly observed by a SPM measurement. An isolated PZT(52/48) active part having a pair of driving Cu electrodes was processed in a 5 m-thick sputtering film. The displacement measurement of the active part and its FEM analysis suggested that the estimated d15 piezoelectric constant of the film was 590 pm/V. And, the d31 value of the film was -120 pm/V measured by a conventional cantilever method. The obtained piezoelectric constants of the PZT film are near those of bulk.

BaCuO/sub 2/ single crystal synthesis and its application to high Te superconductor thin film

1994 ◽  
Author(s):  
R. Miyagawa ◽  
H. Kubota ◽  
H. Kawamura ◽  
T. Fujiyoshi ◽  
M. Nagata ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Crystal Synthesis
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