Nondestructive method for measurement of piezoelectric and dielectric constant, elastic modulus and specific density of thin film piezoelectric cantilevers

2012 ◽  
Author(s):  
J.G. Smits
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Elastic Modulus ◽  
Nondestructive Method ◽  
Specific Density ◽  
Piezoelectric Cantilevers

scholarly journals Strain-Induced Increase of Dielectric Constant in EuO Thin Film

2019 ◽  
Vol 6 (10) ◽  
pp. 106321 ◽  
Author(s):  
Alireza Kashir ◽  
Hyeon-Woo Jeong ◽  
Woochan Jung ◽  
Yoon Hee Jeong ◽  
Gil-Ho Lee
Keyword(s):  
Thin Film ◽  
Dielectric Constant

The characterization and preparation of porous low dielectric films using various cyclodextrins as template materials

2003 ◽  
Vol 766 ◽  
Author(s):  
Jin-Heong Yim ◽  
Jung-Bae Kim ◽  
Hyun-Dam Jeong ◽  
Yi-Yeoul Lyu ◽  
Sang Kook Mah ◽  
...  
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Dielectric Constant ◽  
Pore Structure ◽  
Pore Diameter ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Cyclodextrin Derivatives ◽  
Low Dielectric ◽  
Low K

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).

scholarly journals A harmless thin film elastic modulus measurement method through bending the nonlinear sliding cantilever beam

Measurement ◽  
2021 ◽  
Vol 175 ◽  
pp. 108984
Author(s):  
Jianhua Tang ◽  
Lezhang Liu ◽  
Li Jiang ◽  
Hui Huang ◽  
Qiongyao Wang
Keyword(s):  
Thin Film ◽  
Elastic Modulus ◽  
Cantilever Beam ◽  
Measurement Method ◽  
Modulus Measurement

Investigation of Dead Layer Thickness in SrRuO3/Ba0.5Sr0.5TiO3/Au Thin Film Capacitors

2000 ◽  
Vol 655 ◽  
Author(s):  
L. J. Sinnamon ◽  
R. M. Bowman ◽  
J. M. Gregg
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Layer Thickness ◽  
Perovskite Phase ◽  
Frequency Dispersion ◽  
Dead Layer ◽  
Parameter Ratio ◽  
Thin Film Capacitors ◽  
Dead Layer Thickness ◽  
The Dead

AbstractThin film capacitors with barium strontium titanate (BST) dielectric layers of 7.5 to 950 nm were fabricated by Pulsed Laser Deposition. XRD and EDX analyses confirmed a strongly oriented BST cubic perovskite phase with the desired cation stoichiometry. Room temperature frequency dispersion (ε100 kHz / ε100 Hz) for all capacitors was greater than 0.75. Absolute values for the dielectric constant were slightly lower than expected. This was attributed to the use of Au top electrodes since the same sample showed up to a threefold increase in dielectric constant when Pt was used in place of Au. Dielectric constant as a function of thicknesses greater than 70 nm, was fitted using the series capacitor model. The large interfacial parameter ratio di / εi of 0.40 ± 0.05 nm implied a significant dead-layer component within the capacitor structure. Modelled consideration of the dielectric behaviour for BST films, whose total thickness was below that of the dead layer, predicted anomalies in the plots of d/ ε against d at the dead layer thickness. For the SRO/BST/Au system studied, no anomaly was observed. Therefore, either (i) 7.5 nm is an upper limit for the total dead layer thickness in this system, or (ii) dielectric collapse is not associated with a distinct interfacial dead layer, and is instead due to a through-film effect.

Growth, Structural and Mechanical Characterization and Reliability of Chemical Vapor Deposited Co and Co3O4 Thin Films as Candidate Materials for Sensing Applications

2011 ◽  
Vol 495 ◽  
pp. 108-111 ◽  
Author(s):  
Vasiliki P. Tsikourkitoudi ◽  
Elias P. Koumoulos ◽  
Nikolaos Papadopoulos ◽  
Costas A. Charitidis
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Elastic Modulus ◽  
Data Storage ◽  
Mechanical Stability ◽  
Chemical Vapor ◽  
Magnetic Sensors ◽  
Functional Coatings ◽  
Sensing Applications ◽  
Chemical Vapor Deposited

The adhesion and mechanical stability of thin film coatings on substrates is increasingly becoming a key issue in device reliability as magnetic and storage technology driven products demand smaller, thinner and more complex functional coatings. In the present study, chemical vapor deposited Co and Co3O4thin films on SiO2and Si substrates are produced, respectively. Chemical vapor deposition is the most widely used deposition technique which produces thin films well adherent to the substrate. Co and Co3O4thin films can be used in innovative applications such as magnetic sensors, data storage devices and protective layers. The produced thin films are characterized using nanoindentation technique and their nanomechanical properties (hardness and elastic modulus) are obtained. Finally, an evaluation of the reliability of each thin film (wear analysis) is performed using the hardness to elastic modulus ratio in correlation to the ratio of irreversible work to total work for a complete loading-unloading procedure.

Silk Polymer Coating with Low Dielectric Constant and High Thermal Stability for Ulsi Interlayer Dielectric

1997 ◽  
Vol 476 ◽  
Author(s):  
P. H. Townsend ◽  
S. J. Martin ◽  
J. Godschalx ◽  
D. R. Romer ◽  
D. W. Smith ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Glass Transition ◽  
Transition Temperature ◽  
Glass Transition Temperature ◽  
Integrated Circuits ◽  
Room Temperature ◽  
Polymer Network ◽  
Flow Characteristics ◽  
Interlayer Dielectric

AbstractA novel polymer has been developed for use as a thin film dielectric in the interconnect structure of high density integrated circuits. The coating is applied to the substrate as an oligomeric solution, SiLK*, using conventional spin coating equipment and produces highly uniform films after curing at 400 °C to 450 °C. The oligomeric solution, with a viscosity of ca. 30 cPs, is readily handled on standard thin film coating equipment. Polymerization does not require a catalyst. There is no water evolved during the polymerization. The resulting polymer network is an aromatic hydrocarbon with an isotropie structure and contains no fluorine.The properties of the cured films are designed to permit integration with current ILD processes. In particular, the rate of weight-loss during isothermal exposures at 450 °C is ca. 0.7 wt.%/hour. The dielectric constant of cured SiLK has been measured at 2.65. The refractive index in both the in-plane and out-of-plane directions is 1.63. The flow characteristics of SiLK lead to broad topographic planarization and permit the filling of gaps at least as narrow as 0.1 μm. The glass transition temperature for the fully cured film is greater than 490 °C. The coefficient of thermal expansivity is 66 ppm/°C below the glass transition temperature. The stress in fully cured films on Si wafers is ca. 60 MPa at room temperature. The fracture toughness measured on thin films is 0.62 MPa m ½. Thin coatings absorb less than 0.25 wt.% water when exposed to 80% relative humidity at room temperature.

scholarly journals KARAKTERISASI KAPASITOR BARIUM STRONTIUM TITANAT (BST) Ba0,75 Sr0,25 TiO3 , YANG DIBUAT MENGGUNAKAN METODE SOL-GEL

2019 ◽  
Vol 16 (1) ◽  
pp. 65
Author(s):  
Rahmi Dewi ◽  
Tiara Pertiwi ◽  
Krisman Krisman
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Dielectric Constant ◽  
Impedance Spectroscopy ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Sol Gel ◽  
Barium Strontium ◽  
Scanning Electron

The thin film of Barium Strontium Titanate (BST) has been studied withcomposition ofby using sol-gel method that annealed in temperature of 600oC and 650oC. The thin film of BST is characterized by using Field Emission Scanning Electron Microscopy (FESEM) and an impedance spectroscopy. The results of  FESEM characterization for samples in temperature of 600oC and 650oC are 55.83 nm and 84.88 nm in thickness respectively. The result of impedance spectroscopy characterization given frequency values obtained by the impedance value of real and imaginary.The capacitance value at a frequency of 20 Hz from a thin film of BST in temperature of 600oC and 650oC are 69.36Fand138.70F. The dielectric constant of the thin film of BST in temperature of 600oC and 650oC are 22.17 dan 131.56 respectively.

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