P2H-1 High Frequency and High Selectivity Balanced Front-End SAW Modules for Handheld Transceivers

2007 ◽  
Author(s):  
S. Doberstein
Keyword(s):  
High Frequency ◽  
High Selectivity ◽  
Front End

A Novel Piezoelectric RF-MEMS Resonator with Enhanced Quality Factor

2022 ◽  
Author(s):  
JINCHAO LI ◽  
Zeji Chen ◽  
Wenli Liu ◽  
Jinling Yang ◽  
Yinfang Zhu ◽  
...  
Keyword(s):  
Elastic Waves ◽  
High Frequency ◽  
Rf Mems ◽  
Comprehensive Analysis ◽  
Quality Factors ◽  
Piezoelectric Resonator ◽  
Front End ◽  
Rf Front End ◽  
Mems Resonator ◽  
Compact Size

Abstract This work presents a novel ultra-high frequency (UHF) Lamb mode Aluminum Nitride (AlN) piezoelectric resonator with enhanced quality factors (Q). With slots introduced in the vicinity of the tether support end, the elastic waves leaking from the tether sidewalls can be reflected, which effectively reduces the anchor loss while retaining size compactness and mechanical robustness. Comprehensive analysis was carried out to provide helpful guidance for obtaining optimal slot designs. For various resonators with frequencies ranging from 630 MHz to 1.97 GHz, promising Q enhancements up to 2 times have all been achieved. The 1.97 GHz resonator implemented excellent f × Q product up to 6.72 × 1012 and low motional resistance down to 340 Ω, which is one of the highest performances among the reported devices. The devices with enhanced Q values as well as compact size could have potential application in advanced RF front end transceivers.

Integration of a K-Band Receiver Front-End Using a Copper Core Printed Circuit Board

2018 ◽  
Vol 2018 (1) ◽  
pp. 000384-000388
Author(s):  
Brian Curran ◽  
Jacob Reyes ◽  
Christian Tschoban ◽  
Ivan Ndip ◽  
Klaus-Dieter Lang ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Antenna Arrays ◽  
High Frequency ◽  
Printed Circuit Board ◽  
Cost Effective ◽  
Circuit Board ◽  
Front End ◽  
High Bandwidth ◽  
Increasing Demand ◽  
K Band

Abstract Increasing demand for high bandwidth wireless satellite connections and telecommunications has resulted in interest in steerable antenna arrays in the GHz frequency range. These applications require cost-effective integration technologies for high frequency and high power integrated circuits (ICs) using GaAs, for example. In this paper, an integration platform is proposed, that enables GaAs ICs to be directly placed on a copper core inside cavities of a high frequency laminate for optimal cooling purposes. The platform is used to integrate a K-Band receiver front-end, composed of four GaAs ICs, with linear IF output power for input powers above −40dBm and a temperature of 42°C during operation.

scholarly journals A Wideband Noise and Harmonic Distortion Canceling Low-Noise Amplifier for High-Frequency Ultrasound Transducers

Sensors ◽  
2021 ◽  
Vol 21 (24) ◽  
pp. 8476
Author(s):  
Yuxuan Tang ◽  
Yulang Feng ◽  
He Hu ◽  
Cheng Fang ◽  
Hao Deng ◽  
...  
Keyword(s):  
High Frequency ◽  
Harmonic Distortion ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Cmos Process ◽  
Ultrasound Transducers ◽  
High Frequency Ultrasound ◽  
Front End ◽  
Noise Amplifier ◽  
Frequency Ultrasound

This paper presents a wideband low-noise amplifier (LNA) front-end with noise and distortion cancellation for high-frequency ultrasound transducers. The LNA employs a resistive shunt-feedback structure with a feedforward noise-canceling technique to accomplish both wideband impedance matching and low noise performance. A complementary CMOS topology was also developed to cancel out the second-order harmonic distortion and enhance the amplifier linearity. A high-frequency ultrasound (HFUS) and photoacoustic (PA) imaging front-end, including the proposed LNA and a variable gain amplifier (VGA), was designed and fabricated in a 180 nm CMOS process. At 80 MHz, the front-end achieves an input-referred noise density of 1.36 nV/sqrt (Hz), an input return loss (S11) of better than −16 dB, a voltage gain of 37 dB, and a total harmonic distortion (THD) of −55 dBc while dissipating a power of 37 mW, leading to a noise efficiency factor (NEF) of 2.66.

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