scholarly journals The power flow angle of acoustic waves in thin piezoelectric plates

2008 ◽  
Vol 55 (9) ◽  
pp. 1984-1991 ◽  
Author(s):  
I.E. Kuznetsova ◽  
B.D. Zaitsev ◽  
A.A. Teplykh ◽  
S.G. Joshi ◽  
A.S. Kuznetsova
Author(s):  
Iren E. Kuznetsova ◽  
Boris D. Zaitsev ◽  
Andrey A. Teplykh ◽  
Shrinivas G. Joshi ◽  
Anastasia S. Kuznetsova

2006 ◽  
Vol 32 (12) ◽  
pp. 1033-1035 ◽  
Author(s):  
I. E. Kuznetsova ◽  
B. D. Zaĭtsev ◽  
A. A. Teplykh ◽  
S. G. Joshi

2000 ◽  
Vol 10 (04) ◽  
pp. 1069-1109 ◽  
Author(s):  
MAURICIO PEREIRA DA CUNHA

This article discusses the characteristics of pseudo surface waves (PSAWs) and high velocity pseudo surface waves (HVPSAWs). The fundamental properties of these waves, the matrix method formulation, the different solution types due to crystal symmetry, early experiments on HVPSAWs, and practical applications of pseudo surface acoustic waves serve as an introduction. The solutions to the pseudo modes are discussed by analyzing the boundary condition function for several orientations. The relation between the radiating partial modes and the sagittal plane bulk slowness reveals new characteristics of the different symmetry types of HVPSAW, and helps classify and understand the pseudo modes. The acoustoelectric Poynting vector is used along different crystal symmetry orientations to reveal and discuss the pseudo SAW characteristics: penetration depth, declination of the power vector, and an estimation of power flow angle. Experimental data and numerical solutions of HVPSAW and PSAW along selected planes and orientations are discussed. This article concludes with a brief analysis of layered structures on different symmetry type substrates and a discussion of the layered pseudo surface wave properties.


2000 ◽  
Vol 10 (04) ◽  
pp. 1017-1068 ◽  
Author(s):  
JOHN A. KOSINSKI

Recent developments in single crystal piezoelectric materials have focused on the search for "ideal" materials with zero temperature coefficient of frequency orientations featuring jointly high piezoelectric coupling, high intrinsic Q, zero power flow angle, and minimized diffraction effects. In addition, the desired materials should have no low temperature phase transitions, and a physical chemistry conducive to repeatable, low cost growth and wafer scale device production. As difficult as it might seem to find such "ideal" materials, three completely different but strong candidate materials have emerged recently: the quartz homeotype gallium orthophosphate, the quartz isotype calcium gallo-germanates (langasite, langanite, langatate, etc.), and diomignite (lithium tetraborate). The current state-of-the-art and prospects for future development of these materials are considered.


Author(s):  
Irina A. Borodina ◽  
Boris D. Zaitsev ◽  
Iren E. Kuznetsova ◽  
Andrey A. Teplykh

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