Processing and properties of textured potassium strontium niobate (KSr2Nb5O15) ceramic fibers-effect of texture on the electrical properties

2013 ◽  
Vol 60 (10) ◽  
pp. 2044-2052 ◽  
Author(s):  
Sedat Alkoy ◽  
Sinan Dursun
Keyword(s):  
Electrical Properties ◽  
Ceramic Fibers ◽  
Potassium Strontium Niobate

Processing, Structural and Electrical Properties of Textured Potassium Strontium Niobate (Ksr2Nb5O15) Piezoceramic Fibers

2012 ◽  
Vol 445 ◽  
pp. 481-486 ◽  
Author(s):  
Sinan Dursun ◽  
Sedat Alkoy
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Grain Growth ◽  
Ceramic Fibers ◽  
Electromechanical Properties ◽  
Templated Grain Growth ◽  
Structural And Electrical Properties ◽  
Potassium Strontium Niobate ◽  
Piezoelectric Charge ◽  
Electric Field Induced Strain

Highly [00 textured KSr2Nb5O15 (KSN) ceramic fibers were fabricated by a combination of novel alginate gelation method and templated grain growth using acicular KSr2Nb5O15 template particles. Fibers were drawn from alginate based slurries without or with 25 and 100wt% KSN template particles. A texture fraction of 0.90 was obtained in the case of 25 wt% and a single crystal like texture was obtained in the case of 100wt%. Piezocomposites with 1-3 connectivity were prepared from the KSN fibers and their electrical and electromechanical properties were investigated. Dielectric constant of 140, piezoelectric charge coefficient of 45 pC/N, remnant polarization of 16.6 μC/cm2 and electric field induced strain of up to 0.035% were obtained from piezocomposites with textured fibers.

Electrical properties and sensing ability of novel piezoelectric ceramic fibers with Pt core

2012 ◽  
Author(s):  
Jianzhou Du ◽  
Jinhao Qiu ◽  
Kongjun Zhu ◽  
Hongli Ji ◽  
Huayun Zhao
Keyword(s):  
Electrical Properties ◽  
Piezoelectric Ceramic ◽  
Ceramic Fibers

Microstructure and electrical properties of potassium strontium niobate (KSr2Nb5O15) ceramics

2013 ◽  
Vol 580 ◽  
pp. 93-100 ◽  
Author(s):  
Liangliang Liu ◽  
Feng Gao ◽  
Guoxin Hu ◽  
Jiangnan Liu ◽  
Jinjin Li
Keyword(s):  
Electrical Properties ◽  
Potassium Strontium Niobate

Use of EDS mapping to characterize thermochemical stability of fibers in intermetallic matrix composites

1992 ◽  
Vol 50 (1) ◽  
pp. 160-161
Author(s):  
John R. Porter
Keyword(s):  
Spatial Information ◽  
Beam Current ◽  
Fiber Types ◽  
Ceramic Fibers ◽  
Dye Transfer ◽  
Science Center ◽  
Commercial Development ◽  
Nih Image ◽  
Intermetallic Matrix Composites ◽  
Thermochemical Stability

New ceramic fibers, currently in various stages of commercial development, have been consolidated in intermetallic matrices such as γ-TiAl and FeAl. Fiber types include SiC, TiB2 and polycrystalline and single crystal Al2O3. This work required the development of techniques to characterize the thermochemical stability of these fibers in different matrices.SEM/EDS elemental mapping was used for this work. To obtain qualitative compositional/spatial information, the best realistically achievable counting statistics were required. We established that 128 × 128 maps, acquired with a 20 KeV accelerating voltage, 3 sec. live time per pixel (total mapping time, 18 h) and with beam current adjusted to give 30% dead time, provided adequate image quality at a magnification of 800X. The maps were acquired, with backgrounds subtracted, using a Noran TN 5500 EDS system. The images and maps were transferred to a Macintosh and converted into TIFF files using either TIFF Maker, or TNtolMAGE, a Microsoft QuickBASIC program developed at the Science Center. From TIFF files, images and maps were opened in either NIH Image or Adobe Photoshop for processing and analysis and printed from Microsoft Powerpoint on a Kodak XL7700 dye transfer image printer.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

The morphologies and electrical properties of indium contacts on (100) cadmium telluride surfaces

1992 ◽  
Vol 50 (2) ◽  
pp. 1422-1423
Author(s):  
A.M. Letsoalo ◽  
M.E. Lee ◽  
E.O. de Neijs
Keyword(s):  
Electrical Properties ◽  
Cadmium Telluride ◽  
Methanol Solution ◽  
Electrical Characteristics ◽  
Metal Contacts ◽  
Deposition Technique ◽  
Interfacial Layers ◽  
Semiconductor Contacts ◽  
Grown Single Crystal ◽  
Diamond Abrasive

Semiconductor devices require metal contacts for efficient collection of electrical charge. The physics of these metal/semiconductor contacts assumes perfect, abrupt and continuous interfaces between the layers. However, in practice these layers are neither continuous nor abrupt due to poor nucleation conditions and the formation of interfacial layers. The effects of layer thickness, deposition rate and substrate stoichiometry have been previously reported. In this work we will compare the effects of a single deposition technique and multiple depositions on the morphology of indium layers grown on (100) CdTe substrates. The electrical characteristics and specific resistivities of the indium contacts were measured, and their relationships with indium layer morphologies were established.Semi-insulating (100) CdTe samples were cut from Bridgman grown single crystal ingots. The surface of the as-cut slices were mechanically polished using 5μm, 3μm, 1μm and 0,25μm diamond abrasive respectively. This was followed by two minutes immersion in a 5% bromine-methanol solution.

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