Characteristics of surface acoustic waves excited by (1120) zno films deposited on R-sapphire substrates

2013 ◽  
Vol 60 (6) ◽  
pp. 1213-1218 ◽  
Author(s):  
Yan Wang ◽  
Shu-yi Zhang ◽  
Li Fan ◽  
Xiu-ji Shui ◽  
Zhong-ning Zhang ◽  
...  
Keyword(s):  
Acoustic Waves ◽  
Surface Acoustic Waves ◽  
Zno Films ◽  
Sapphire Substrates

Surface acoustic waves in c-axis inclined ZnO films

2002 ◽  
Author(s):  
G. Carlotti ◽  
D. Fioretto ◽  
G. Socino ◽  
L. Palmieri ◽  
A. Petri ◽  
...  
Keyword(s):  
Acoustic Waves ◽  
Surface Acoustic Waves ◽  
Zno Films

scholarly journals Epitaxial Growth of Sc0.09Al0.91N and Sc0.18Al0.82N Thin Films on Sapphire Substrates by Magnetron Sputtering for Surface Acoustic Waves Applications

Sensors ◽  
2020 ◽  
Vol 20 (16) ◽  
pp. 4630
Author(s):  
Florian Bartoli ◽  
Jérémy Streque ◽  
Jaafar Ghanbaja ◽  
Philippe Pigeat ◽  
Pascal Boulet ◽  
...  
Keyword(s):  
Acoustic Waves ◽  
Electromechanical Coupling ◽  
Surface Acoustic Waves ◽  
Electromechanical Coupling Coefficient ◽  
X Ray Diffraction ◽  
Plasma Parameters ◽  
Sapphire Substrates ◽  
Saw Devices ◽  
Transmission Electron ◽  
Electrical Characterizations

Scandium aluminum nitride (ScxAl1-xN) films are currently intensively studied for surface acoustic waves (SAW) filters and sensors applications, because of the excellent tradeoff they present between high SAW velocity, large piezoelectric properties and wide bandgap for the intermediate compositions with an Sc content between 10 and 20%. In this paper, the growth of Sc0.09Al0.91N and Sc0.18Al0.82N films on sapphire substrates by sputtering method is investigated. The plasma parameters were optimized, according to the film composition, in order to obtain highly-oriented films. X-ray diffraction rocking-curve measurements show a full width at half maximum below 1.5°. Moreover, high-resolution transmission electron microscopy investigations reveal the epitaxial nature of the growth. Electrical characterizations of the Sc0.09Al0.91N/sapphire-based SAW devices show three identified modes. Numerical investigations demonstrate that the intermediate compositions between 10 and 20% of scandium allow for the achievement of SAW devices with an electromechanical coupling coefficient up to 2%, provided the film is combined with electrodes constituted by a metal with a high density.

Interaction of surface acoustic waves and ultraviolet light in ZnO films

2003 ◽  
Vol 18 (3) ◽  
pp. 545-548 ◽  
Author(s):  
Parmanand Sharma ◽  
Sanjeev Kumar ◽  
K. Sreenivas
Keyword(s):  
Acoustic Waves ◽  
Delay Line ◽  
Uv Light ◽  
Surface Acoustic Waves ◽  
Zno Films ◽  
Zno Thin Film ◽  
Linear Change ◽  
Sensor Applications ◽  
Upper Surface Layer ◽  
Ultraviolet Sensor

The frequency response of a 37 MHz bulk LiNbO3 surface acoustic wave (SAW) filter with a 200-nm-thick ZnO overlayer exhibited a downshift in the frequency with ultraviolet (UV) light due to acoustoelectric interactions between the photo-generated carriers in the semiconducting ZnO and the surface acoustic waves. In contrast, a 36 MHz ZnO thin film SAW delay-line with insulating ZnO films exhibited an upshift in the frequency. The response was more pronounced at higher harmonics (130–315 MHz) and was attributed to changes in the elastic/dielectric properties in the upper surface layer of ZnO. A linear change in the frequency with UV intensity shows immense applicability for wireless ultraviolet sensor applications.

ZnO Based SAW Delay Line: Thin Film Characteristics and IDT Fabrication

2003 ◽  
Vol 785 ◽  
Author(s):  
Farid Hassani ◽  
Shahrokh Ahmadi ◽  
Can E. Korman ◽  
Mona Zaghloul ◽  
Shiva Hullavarad ◽  
...  
Keyword(s):  
Acoustic Waves ◽  
Delay Line ◽  
Surface Acoustic Waves ◽  
Rf Sputtering ◽  
Device Fabrication ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Interdigital Electrodes

AbstractZnO, a well-known piezoelectric material, is used to develop micro-scale Surface Acoustic Wave (SAW) delay line sensor. In this work, SAW delay line Devices are fabricated employing ZnO films that are deposited by RF sputtering technique. Films are characterized prior to device fabrication by X-Ray Diffraction (XRD) for film crystalline quality, UV-visible transmission spectroscopy for optical characteristics, and Atomic Force Microscopy (AFM) for surface morphology. Interdigital electrodes producing surface acoustic waves in the hundreds of MHz are developed by photolithography and metalization techniques. SAW delay line device testing, measurement and characteristics on RF sputtered ZnO films are presented and compared.

Nonlinear Acoustoelastic Interactions of Lamb Waves with LiNbO3 Films Deposited on Sapphire Substrates

2004 ◽  
Vol 261-263 ◽  
pp. 263-268 ◽  
Author(s):  
H. Liu ◽  
K.C. Shin ◽  
J.J. Lee ◽  
Z.M. Cai
Keyword(s):  
Electric Field ◽  
Acoustic Waves ◽  
Lamb Waves ◽  
Piezoelectric Plate ◽  
Surface Acoustic Waves ◽  
Bias Field ◽  
Film Structure ◽  
Voltage Sensors ◽  
Sapphire Substrates ◽  
Piezoelectric Structure

The influence of a biasing electric field on the propagation of the lowest-order antisymmetrical a0 Lamb wave modes in a bi-layered piezoelectric plate is investigated in this paper. It is found that the velocity shifts for the a0 mode due to presence of the bias field on the 10- µm LiNbO3 film structure are comparable with those observed in surface acoustic waves and Lamb waves in LiNbO3 plates. The fractional change in phase velocity of the layered piezoelectric structure is a linear function of the biasing electric field and can be used in voltage sensors.

Characterization of RF Sputtered ZnO Piezoelectric Films Using Transmission Electron Microscope

1975 ◽  
Vol 33 ◽  
pp. 86-87
Author(s):  
Kemining W. Yeh ◽  
Richard S. Muller ◽  
Wei-Kuo Wu ◽  
Jack Washburn
Keyword(s):  
Integrated Circuit ◽  
Acoustic Waves ◽  
New Technology ◽  
Surface Acoustic Waves ◽  
Electromechanical Properties ◽  
Leading Role ◽  
Saw Devices ◽  
Transmission Electron ◽  
High Degree

Considerable and continuing interest has been shown in the thin film transducer fabrication for surface acoustic waves (SAW) in the past few years. Due to the high degree of miniaturization, compatibility with silicon integrated circuit technology, simplicity and ease of design, this new technology has played an important role in the design of new devices for communications and signal processing. Among the commonly used piezoelectric thin films, ZnO generally yields superior electromechanical properties and is expected to play a leading role in the development of SAW devices.

Attenuation of surface acoustic waves by quantum dots

1998 ◽  
Vol 77 (5) ◽  
pp. 1195-1202
Author(s):  
Andreas Knabchen Yehoshua, B. Levinson, Ora
Keyword(s):  
Quantum Dots ◽  
Acoustic Waves ◽  
Surface Acoustic Waves
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