Position dependent photocurrent intensity of MSM photodetectors

Distributed waveguide-integrated InGaAs MSM photodetectors for high-efficiency and ultra-wideband operation

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) ◽

10.1109/iciprm.1999.773639 ◽

2003 ◽

Cited By ~ 8

Author(s):

E.H. Bottcher ◽

H. Pfitzenmaier ◽

E. Droge ◽

S. Kollakowski ◽

A. Strittmatter ◽

...

Keyword(s):

High Efficiency ◽

Ultra Wideband ◽

Msm Photodetectors

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High-speed MSM-photodetectors

13th International Crimean Conference Microwave and Telecommunication Technology, 2003. CriMiCo 2003. ◽

10.1109/crmico.2003.158790 ◽

2003 ◽

Cited By ~ 1

Author(s):

S.V. Averin ◽

R. Sachot

Keyword(s):

High Speed ◽

Msm Photodetectors

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THE STUDY OF Pd SCHOTTKY CONTACT ON POROUS GaN FOR UV METAL–SEMICONDUCTOR–METAL (MSM) PHOTODETECTORS

Journal of Nonlinear Optical Physics & Materials ◽

10.1142/s0218863507003871 ◽

2007 ◽

Vol 16 (04) ◽

pp. 497-503 ◽

Cited By ~ 1

Author(s):

L. S. CHUAH ◽

Z. HASSAN ◽

H. ABU HASSAN

Keyword(s):

Molecular Beam Epitaxy ◽

Tensile Stress ◽

Molecular Beam ◽

Schottky Contact ◽

Nitrogen Plasma ◽

Porous Sample ◽

Optical Studies ◽

High Quality ◽

Metal Semiconductor Metal ◽

Msm Photodetectors

High quality unintentionally doped n-type GaN layers were grown on Si (111) substrate using AlN (about 200 nm) as buffer layer by radio frequency (RF) nitrogen plasma-assisted molecular beam epitaxy (MBE). This paper presents the structural and optical studies of porous GaN sample compared to the corresponding as-grown GaN. Metal–semiconductor–metal (MSM) photodiode was fabricated on the samples. For as-grown GaN-based MSM, the detector shows a sharp cut-off wavelength at 362 nm, with a maximum responsivity of 0.254 A/W achieved at 360 nm. For porous GaN MSM detector, a sharp cut-off wavelength at 360 nm with a maximum responsivity of 0.655 A/W was achieved at 359 nm. Both the detectors show a little decrease in responsivity in the UV spectral region. The MSM photodiode based on porous GaN shows enhanced (2×) magnitude of responsivity relative to the as-grown GaN MSM photodiode. Enhancement of responsivity can be attributed to the relaxation of tensile stress and reduction of surface pit density in the porous sample.

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