Study on Properties of M50 Steel Implanted With Nitrogen by Plasma-Based Ion Implantation at Elevated Temperatures

2006 ◽  
Vol 34 (4) ◽  
pp. 1204-1208 ◽  
Author(s):  
X. Ma ◽  
S. Xu ◽  
G. Tang
Keyword(s):  
Ion Implantation ◽  
Elevated Temperatures ◽  
M50 Steel

Plasma Immersion Ion Implantation at Elevated Temperatures

2018 ◽  
pp. 187-200
Author(s):  
R. Hutchings ◽  
M. J. Kenny ◽  
D. R. Miller ◽  
W. Y. Yeung
Keyword(s):  
Ion Implantation ◽  
Elevated Temperatures ◽  
Plasma Immersion Ion Implantation

Growth, Doping, Device Development and Characterization of CVD Beta-SiC Epilayers on Si(100) and Alpha-SiC(0001)

1987 ◽  
Vol 97 ◽  
Author(s):  
H. Kong ◽  
H. J. Kim ◽  
J. A. Edmond ◽  
J. W. Palmour ◽  
J. Ryu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Elevated Temperatures ◽  
Deep Level ◽  
Schottky Diodes ◽  
Free Carriers ◽  
Device Development ◽  
Post Annealing ◽  
P Type ◽  
Sic Films

ABSTRACTMonocrystalline β-SiC films have been chemically vapor deposited on Si(100) and c-SiC(0001) at 1660K-1823K and 0.1 MPa using SiH4 and C2H4 carried in H2. Films grown directly on Si(100) contained substantial concentrations of dislocations, stacking faults and antiphase boundaries (APB); those on α-SiC(0001) contained double positioning boundaries. Both the APBs and the double positioning boundaries were eliminated by using off-axis orientations of the respective substrates. Films produced on Si(100) have also been doped during growth and via ion implantation with B or Al (p-type) or P or N (n-type) at LN, room and elevated temperatures. Results from the former procedure showed the ionized dopant/total dopant concentration ratios for N, P, B and Al to be 0.1, 0.2, 0.002 and 0.01, respectively. The solubility limits of N, P and B at 1660K were determined to be ∼ 2E20, 1E18 and 8E18 cm−3, respectively; that of Al exceeds 2E19 cm−3. High temperature ion implantation coupled with dynamic and post annealing resulted in a markedly reduced defect concentration relative to that observed in similar research at the lower temperatures. Schottky diodes, p-n junctions, and MOSFET devices have been fabricated. The p-n junctions have the characteristics of insulators containing free carriers and deep level traps. The MOSFETs show very good I-V characteristics up to 673K, but have not been optimized.

Impurity Profiles in InP from Ion Implantation at Elevated Temperatures

1991 ◽  
Vol 240 ◽  
Author(s):  
P. Kringhoj ◽  
B. G. Svensson
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Elevated Temperatures ◽  
Secondary Ion Mass Spectrometry ◽  
Implantation Damage ◽  
Ion Mass Spectrometry ◽  
Chemical Profiles ◽  
Impurity Profiles ◽  
Secondary Ion

ABSTRACTThe chemical profiles of Zn, Ge, and Se implanted into InP at elevated temperatures have been measured with secondary ion mass spectrometry and correlated to the implantation damage as deduced from RBS/channeling measurements. An asymmetric broadening of the chemical profiles towards the bulk was found for implantation temperatures above 150°C. This effect is concluded to be due to impurity channeling during implantation.

Radiation Effects in Nonmetals: Amorphization, Phase Decomposition, and Nanoparticles

1998 ◽  
Vol 540 ◽  
Author(s):  
A. Meldrum ◽  
L.A. Boatner ◽  
C.W. White ◽  
D.O. Henderson
Keyword(s):  
Ion Implantation ◽  
Electron Irradiation ◽  
Radiation Effects ◽  
Elevated Temperatures ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Semiconductor Nanocrystals ◽  
Heavy Ion ◽  
Fused Silica ◽  
Near Surface

AbstractRadiation effects in nonmetals have been studied for well over a century by geologists, mineralogists, physicists, and materials scientists. The present work focuses on recent results of investigations of the ion-beam-induced amorphization of the ABO4 compounds – including the orthophosphates (LnPO4; Ln = lanthanides) and the orthosilicates: zircon (ZrSiO4), hafnon (HfSiO4), and thorite (ThSiO4). In the case of the orthosilicates, heavy-ion irradiation at elevated temperatures causes the precipitation of a nanocrystalline metal oxide. Electron irradiation effects in these amorphized insulating ceramics can produce localized recrystallization on a nanometer scale. Similar electron irradiation techniques were used to nucleate monodispersed compound semiconductor nanocrystals formed by ion implantation of the elemental components into fused silica. Methods for the formation of novel structural relationships between embedded nanocrystals and their hosts have been developed and the results presented here demonstrate the general flexibility of ion implantation and irradiation techniques for producing unique near-surface microstructures in ion-implanted host materials.

Comparison of Commercially Pure Titanium Surface Hardness Improvement by Plasma Nitrocarburizing and Ion Implantation

2013 ◽  
Vol 789 ◽  
pp. 347-351 ◽  
Author(s):  
Agung Setyo Darmawan ◽  
Waluyo Adi Siswanto ◽  
Tjipto Sujitno
Keyword(s):  
Ion Implantation ◽  
Elevated Temperatures ◽  
Pure Titanium ◽  
Surface Hardness ◽  
Commercially Pure Titanium ◽  
Hardness Tester ◽  
Hardness Number ◽  
Commercially Pure ◽  
Hardness Tests ◽  
Plasma Nitrocarburizing

Commercially pure (cp) titanium has a relative soft hardness property. In particular usage such as sliding, the improvement of the surface hardness will be required. In this study, surface hardness improvement of cp titanium by Plasma Nitrocarburizing and Ion Implantation are compared. Plasma Nitrocarburizing processes are conducted at different elevated temperatures with different duration processes, i.e. at 350 °C for 3, 4, and 5 hours, and at 450 °C for 2, 3, and 4 hours respectively, while Ion Implantation processes are conducted at room temperature and process durations are varied as 2.3 hours, 4.7 hours, and 9.3 hours. Nitrogen ions are used to implant the material. Hardness tests are then performed on each specimen by using Micro Vickers Hardness Tester. The surface hardness number (HV) for specimens of the Plasma Nitrocarburizing processes at temperature of 350 °C for process duration of 3 hours, 4 hours, and 5 hours are 74.16, 92.25 and 94.41, respectively while those at temperature of 450 °C for duration process of 2 hours, 3 hours, and 4 hours are 103.70, 121.31 and 126.17, respectively. The processes of Ion Implantation produce the surface hardness number (HV) of 88.97, 125.51, and 130.2, for duration processes of 2.3 hours, 4.7 hours, and 9.3 hours. The process of Ion Implantation produce higher surface hardness number than the Plasma Nitrocarburizing process at temperature 350 °C but the surface hardness number is lower when compared to the Plasma Nitrocarburizing at a temperature of 450 °C. For the duration processes 4 hours and more, the process of Ion Implantation produces the same surface hardness number with the Plasma Nitrocarburizing at temperature of 450 °C.

scholarly journals Doping of GaN by Ion Implantation: Does it Work?

1998 ◽  
Vol 512 ◽  
Author(s):  
A. Suvkhanov ◽  
J. Hunn ◽  
W. Wu ◽  
D. Thomson ◽  
K. Price ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Elevated Temperatures ◽  
Nitrogen Loss ◽  
Chemical Vapor ◽  
High Sensitivity ◽  
Liquid Nitrogen Temperature ◽  
Organic Chemical ◽  
Damage Level ◽  
In Doping ◽  
Annealing Effects

ABSTRACTEpitaxially grown GaN by metal organic chemical vapor deposition (MOCVD) on SiC were implanted with 100 keV Si+ (for n-type) and 80 keV Mg+ (for p-type) with various fluences from 1×1012 to 7×1015 ions/cm2 at liquid nitrogen temperature (LT), room temperature (RT), and 700 °C (HT). High temperature (1200 °C and 1500 °C) annealing was carried out after capping the GaN with epitaxial AIN by MOCVD to study damage recovery. Samples were capped by a layer of AIN in order to protect the GaN surface during annealing. Effects of implant temperature, damage and dopant activation are critically studied to evaluate a role of ion implantation in doping of GaN. The damage was studied by Rutherford Backscattering/Channeling, spectroscopic ellipsometry and photoluminescence. Results show dependence of radiation damage level on temperature of the substrate during implantation: implantations at elevated temperatures up to 550 °C decrease the lattice disorder; “hot implants” above 550 °C can not be useful in doping of GaN due to nitrogen loss from the surface. SE measurements have indicated very high sensitivity to the implantation damage. PL measurements at LT of 80 keV Mg+ (5×1014 cm-2) implanted and annealed GaN showed two peaks : one ∼100 meV and another ∼140 meV away from the band edge.

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