scholarly journals In-Depth Analysis on Radiation Induced Multi-Level Dark Current Random Telegraph Signal in Silicon Solid State Image Sensors

2017 ◽  
Vol 64 (1) ◽  
pp. 19-26 ◽  
Author(s):  
Clementine Durnez ◽  
Vincent Goiffon ◽  
Cedric Virmontois ◽  
Jean-Marc Belloir ◽  
Pierre Magnan ◽  
...  
Keyword(s):  
Solid State ◽  
Dark Current ◽  
Image Sensors ◽  
Random Telegraph Signal ◽  
Depth Analysis ◽  
Radiation Induced ◽  
Multi Level

scholarly journals Total Ionizing Dose Radiation-Induced Dark Current Random Telegraph Signal in Pinned Photodiode CMOS Image Sensors

2018 ◽  
Vol 65 (1) ◽  
pp. 92-100 ◽  
Author(s):  
Clementine Durnez ◽  
Vincent Goiffon ◽  
Cedric Virmontois ◽  
Serena Rizzolo ◽  
Alexandre Le Roch ◽  
...  
Keyword(s):  
Dark Current ◽  
Image Sensors ◽  
Total Ionizing Dose ◽  
Random Telegraph Signal ◽  
Cmos Image Sensors ◽  
Radiation Induced ◽  
Dose Radiation ◽  
Pinned Photodiode

scholarly journals Phosphorus Versus Arsenic: Role of the Photodiode Doping Element in CMOS Image Sensor Radiation-Induced Dark Current and Random Telegraph Signal

2020 ◽  
Vol 67 (7) ◽  
pp. 1241-1250
Author(s):  
Alexandre Le Roch ◽  
Cedric Virmontois ◽  
Philippe Paillet ◽  
Jean-Marc Belloir ◽  
Serena Rizzolo ◽  
...  
Keyword(s):  
Dark Current ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Random Telegraph Signal ◽  
Doping Element ◽  
Radiation Induced

scholarly journals CMOS Image Sensors and Plasma Processes: How PMD Nitride Charging Acts on the Dark Current

Sensors ◽  
2019 ◽  
Vol 19 (24) ◽  
pp. 5534
Author(s):  
Yolène Sacchettini ◽  
Jean-Pierre Carrère ◽  
Romain Duru ◽  
Jean-Pierre Oddou ◽  
Vincent Goiffon ◽  
...  
Keyword(s):  
Dark Current ◽  
Uv Light ◽  
Degradation Mechanism ◽  
Nitride Layer ◽  
Image Sensors ◽  
Electron Hole ◽  
Cmos Image Sensors ◽  
Depth Analysis

Plasma processes are known to be prone to inducing damage by charging effects. For CMOS image sensors, this can lead to dark current degradation both in value and uniformity. An in-depth analysis, motivated by the different degrading behavior of two different plasma processes, has been performed in order to determine the degradation mechanisms associated with one plasma process. It is based on in situ plasma-induced charge characterization techniques for various dielectric stack structures (dielectric nature and stack configuration). A degradation mechanism is proposed, highlighting the role of ultraviolet (UV) light from the plasma in creating an electron hole which induces positive charges in the nitride layer at the wafer center, and negative ones at the edge. The trapped charges de-passivate the SiO2/Si interface by inducing a depleted interface above the photodiode, thus emphasizing the generation of dark current. A good correlation between the spatial distribution of the total charges and the value of dark current has been observed.

scholarly journals Dark Current Random Telegraph Signals in Solid-State Image Sensors

2013 ◽  
Vol 60 (6) ◽  
pp. 4323-4331 ◽  
Author(s):  
Cedric Virmontois ◽  
Vincent Goiffon ◽  
Mark S. Robbins ◽  
Laurie Tauziede ◽  
Herve Geoffray ◽  
...  
Keyword(s):  
Solid State ◽  
Dark Current ◽  
Image Sensors ◽  
Random Telegraph Signals

Radiation-Induced Deep-Level Traps in CCD Image Sensors

2007 ◽  
Vol 994 ◽  
Author(s):  
Cristian Tivarus ◽  
William C. McColgin
Keyword(s):  
Dark Current ◽  
Deep Level ◽  
Image Sensors ◽  
Charge Coupled Devices ◽  
Radiation Induced ◽  
Ccd Image ◽  
Silicon Defects

AbstractDark current spectroscopy (DCS) is used to study deep level traps corresponding to the bright pixels that form the histogram “tails” of irradiated charge-coupled devices (CCD). We found four distinct traps, among which the double vacancy (V2) and the vacancy-phosphorous (VP) have the highest concentrations and generation rates. We show that DCS can be used to examine the annealing mechanisms of silicon defects to concentrations as low as 5 × 107 cm−3.

scholarly journals Identification of Radiation Induced Dark Current Sources in Pinned Photodiode CMOS Image Sensors

2012 ◽  
Vol 59 (4) ◽  
pp. 918-926 ◽  
Author(s):  
V. Goiffon ◽  
C. Virmontois ◽  
P. Magnan ◽  
P. Cervantes ◽  
S. Place ◽  
...  
Keyword(s):  
Dark Current ◽  
Image Sensors ◽  
Cmos Image Sensors ◽  
Radiation Induced ◽  
Pinned Photodiode

scholarly journals Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors

2020 ◽  
Vol 19 ◽  
pp. 103443
Author(s):  
Bingkai Liu ◽  
Yudong Li ◽  
Lin Wen ◽  
Dong Zhou ◽  
Jie Feng ◽  
...  
Keyword(s):  
Dark Current ◽  
Image Sensors ◽  
Random Telegraph Signal ◽  
Cmos Image Sensors ◽  
Backside Illuminated
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