Effects of Gamma and Heavy Ion Damage on the Impulse Response and Pulsed Gain of a Low Breakdown Voltage Si Avalanche Photodiode

2006 ◽  
Vol 53 (6) ◽  
pp. 3786-3793 ◽  
Author(s):  
Jamie S. Laird ◽  
Shinobu Onoda ◽  
Toshio Hirao ◽  
Heidi Becker ◽  
Allan Johnston ◽  
...  
Keyword(s):  
Impulse Response ◽  
Breakdown Voltage ◽  
Avalanche Photodiode ◽  
Heavy Ion ◽  
Ion Damage

The Creation and Annealing of Heavy Ion Damage in Silicon

1987 ◽  
Vol 93 ◽  
Author(s):  
L. M. Howe ◽  
M. H. Rainville
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Spatial Distribution ◽  
High Resolution ◽  
Heavy Ion ◽  
High Energy ◽  
Transmission Electron ◽  
Ion Damage ◽  
Deposited Energy ◽  
Microscopy Techniques

ABSTRACTHigh resolution transmission electron microscopy techniques have been used to obtain information on the contrast, spatial distribution, size and annealing behaviour of the damaged regions produced within individual collision cascades by heavy ion (As, Sb and Bi) bombardment (10–120 KeV) of silicon with 1.0 × 1011 – 6.0 × 1011 ions cm−2. The fraction of the theoretical cascade volume occupied by a heavily damaged region steadily increased as the average deposited energy density within the cascade increased. At high energy densities, the visible damage produced in the main cascade consisted of a single, isolated damaged region. With decreasing values of (i.e. increasing ion implant energies), there was an increasing tendency for multiple damaged regions to be produced within the main cascade.

Heavy Ion Damage in Ultra-Thin Gate Oxide SQl MOSFETs

2005 ◽  
Author(s):  
Andrea Cester ◽  
Simone Gerardin ◽  
Alberto Gasperin ◽  
Alessandro Paccagnella ◽  
Eddy Simoen ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Heavy Ion ◽  
Ion Damage ◽  
Thin Gate Oxide

The study of heavy-ion damage in pure copper

1981 ◽  
Vol 44 (2) ◽  
pp. 285-308 ◽  
Author(s):  
A. Y. Stathopoulos
Keyword(s):  
Pure Copper ◽  
Heavy Ion ◽  
Ion Damage

Structure of Nanometer Wide Heavy-Ion Tracks in Muscovite

2013 ◽  
Vol 328 ◽  
pp. 739-743
Author(s):  
Yehuda Eyal ◽  
Sameer Abu Saleh
Keyword(s):  
Electron Density ◽  
Small Angle ◽  
Heavy Ion ◽  
Atomic Order ◽  
Electron Densities ◽  
X Ray ◽  
Ion Tracks ◽  
X Ray Scattering ◽  
Ion Damage ◽  
Pb Ions

Radial electron densities within 63-67 μm long ion damage trails, latent ion tracks, created in {001} muscovite by irradiation with 11.1-28.7 MeV/A U and Pb ions, have been derived by small-angle X-ray scattering. Track diameters are 8.0-10.2 nm. The tracks exhibit continuous and uniform electron density decrease of ~4%. Complementary microscopy has revealed loss of atomic order in the tracks. These ion-induced effects undoubtedly accelerate preferential through track permeability of inert and corrosive agents, a property that is important for track applications.

Fully Planar 4H-SiC Avalanche Photodiode With Low Breakdown Voltage

2017 ◽  
Vol 17 (14) ◽  
pp. 4460-4465 ◽  
Author(s):  
A. Sciuto ◽  
M. Mazzillo ◽  
P. Lenzi ◽  
S. Di Franco ◽  
D. Mello ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Avalanche Photodiode
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